Low Resistivity Nickel Germanosilicide Contacts to Ultra-shallow Junctions Formed by the Selective Si1-xGexTechnology for Nanoscale CMOS

2003 ◽  
Vol 765 ◽  
Author(s):  
Jing Liu ◽  
Hongxiang Mo ◽  
Mehmet C. Öztürk
Keyword(s):  
Direct Impact ◽  
Interface Morphology ◽  
Low Resistivity ◽  
Nanoscale Cmos ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Phosphorus Doped ◽  
Thermal Stability Of

AbstractIn this paper, we present our recent results on nickel germanosilicide contacts formed on p+-n and n+-p junctions formed by selective deposition of in-situ doped Si1-xGexalloys. Our results show that ultra-thin, low resistivity NiSi1-xGexcontacts can be formed at temperatures as low as 300°C on both boron and phosphorus doped Si1-xGexlayers. Ultra-shallow junctions with excellent reverse leakage behavior and a contact resistivity ∼ of 10-8ohm-cm2were successfully demonstrated. The thermal stability of NiSi1-xGexwas found to be limited to 500°C on p+-Si1-xGexand 600°C onn+-Si1-xGex. It was found that by inserting a thin Pt interlayer between Ni and Si1-xGex, the quality of the NiSi1-xGexcontacts could be significantly improved. The Pt interlayer was found to improve the interface morphology, which was found to have a direct impact on the electrical properties of the contacts.

Influence of Polysilicon Processing on the Quality of Thin RTP/Furnace Gate Oxides

1990 ◽  
Vol 182 ◽  
Author(s):  
J. Haase ◽  
R. Ferretti ◽  
S. Prasad
Keyword(s):  
Process Parameters ◽  
Thin Layers ◽  
Constant Current ◽  
Gate Oxides ◽  
Different Temperatures ◽  
Current Densities ◽  
Phosphorus Doped ◽  
Mos Structures

AbstractThin layers of oxides (10–11nm) were fabricated by rapid thermal (RTP) or furnace oxidation. The RTP oxides were grown at different temperatures and were exposed to a two step post oxidation anneal (POA). The furnace oxides were grown at one temperature and received different POA/s. As gate metallization, in-situ phosphorus-doped polysilicon was used. Post poly anneal (PPA) is carried out in the RTP system using a set of temperatures. After having defined MOS structures by photolithography oxide charges, breakdown voltages and breakdown charges were determined. For different current densities, FN-voltage shift during constant current injection was monitored to make lifetime predictions. Received data were correlated to the different process parameters.

Fabrication of Ultra-Shallow P+-N and N+-P Junctions by Diffusion From Selectively Deposited, Ion-Implanted and In-Situ Doped Si0.7Ge0.3

1993 ◽  
Vol 303 ◽  
Author(s):  
D.T. Grider ◽  
M.C. ÖztÜrk ◽  
J.J. Wortman ◽  
G.S. Harris ◽  
D.M. Maher
Keyword(s):  
High Surface ◽  
Chemical Vapor ◽  
Surface Concentration ◽  
Shallow Junctions ◽  
High Surface Concentration ◽  
Diffusion Source ◽  
Ultra Shallow Junctions ◽  
P Type ◽  
Ion Implanted

ABSTRACTSelectively deposited Si0.7Ge0.3 has been investigated as a potential diffusion source for fabricating ultra-shallow junctions in Si. Rapid thermal chemical vapor deposition (RTCVD) was used to selectively deposit Si0.7Ge0.3 on Si using SiH2C12, GeH4, and H2. Both ionimplanted and in-situ doped Si0.7Ge0.3 were considered as a diffusion source for fabricating ultra-shallow junctions. In-situ doping was achieved with B2H6 and PH3 for p-type and n-type doping, respectively. Boron and phosphorus diffusion in ion-implanted Si0.7Ge0.3 was investigated and modeled using SSUPREM4. Diffusion from implanted and in-situ doped Si0.7Ge0.3 in Si was also studied and modeled. Boron diffusivities in Si0.7Ge0.3 were found to be approximately 10 times greater than in Si, while phosphorus diffusivities were over 100 times greater in Si0.7Ge0.3. The faster dopant diffusivities in Si0.7Ge0.3 allow high surface concentration, abrupt diffusion profiles to be formed in Si. Gated, p-n junction diodes with junction depths as shallow as 140Å were fabricated and tested to study the quality of the diffusions from Si0.7Ge0.3.

Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions

2004 ◽  
Vol 114-115 ◽  
pp. 174-179 ◽  
Author(s):  
F. Cristiano ◽  
N. Cherkashin ◽  
P. Calvo ◽  
Y. Lamrani ◽  
X. Hebras ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Activation ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Thermal Stability Of

The Effect of SiGe Barriers on the Thermal Stability of Highly B-Doped Si Surface Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
Phillip E. Thompson ◽  
Joe Bennett ◽  
Robert Crosby ◽  
Mark E. Twigg
Keyword(s):  
Thermal Stability ◽  
Molecular Beam ◽  
Diffusion Barriers ◽  
Practical Application ◽  
Surface Layers ◽  
Barrier Layers ◽  
Device Processing ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Thermal Stability Of

ABSTRACTWe have investigated the use of low-temperature (320 °C) molecular-beam epitaxy (MBE) to form highly conductive, p+, ultra-shallow layers in Si. Although the as-grown B-doped Si is electrically active, in a practical application the doped layers may be exposed to high temperature during post-growth device processing. To minimize the B diffusion, we investigated the use of SiGe diffusion barrier layers. In this work we demonstrate there is less B redistribution with the SiGe diffusion barriers. The use of SiGe diffusion barriers may prove to be critical in the activation of B implants for the formation of ultra-shallow junctions.

A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth

2004 ◽  
Vol 224 (1-4) ◽  
pp. 63-67 ◽  
Author(s):  
Roger Loo ◽  
Matty Caymax ◽  
Philippe Meunier-Beillard ◽  
Ivan Peytier ◽  
Frank Holsteyns ◽  
...  
Keyword(s):  
New Technique ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
A New Technique

Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices

2012 ◽  
Vol 520 (8) ◽  
pp. 3149-3154 ◽  
Author(s):  
Nicolas Loubet ◽  
Thomas Adam ◽  
Mark Raymond ◽  
Qing Liu ◽  
Kangguo Cheng ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Resistivity ◽  
Effect Transistor ◽  
Phosphorus Doped

Pengaruh Jenis Co-Solvent terhadap Rendemen dan Mutu Biodiesel secara Transesterifikasi In Situ Menggunakan Radiasi Gelombang Mikro

2016 ◽  
Vol 10 (2) ◽  
pp. 119-126
Author(s):  
Mahlinda Mahlinda ◽  
Fitriana Djafar
Keyword(s):  
Catalyst Concentration ◽  
Maximum Yield ◽  
Acid Value ◽  
Experimental Result ◽  
In Situ Transesterification ◽  
Yield And Quality ◽  
Solvent Type ◽  
Biodiesel Quality

The main purpose of this research was to observer effect co-solvent type (n-Hexane, chloroform and without co-solvent)  toward yield and quality of biodiesel via in situ transesterification process using microwave irradiation. The process was studied at microwave power 450 watt, reaction time 4 minutes, methanol to seed ratio 25:1 and catalyst concentration 5%. The physicochemical parameters of the biodiesel produced such as viscosity, density and acid value were analysed and compared with the SNI 7182-2012 standard. The experimental result showed the maximum yield biodiesel 78,32% obtained by using co-solvent chloroform.Test result of physicochemical properties (viscosity, density and acid value) of biodiesel products using co solvent n-Hexane, chloroform and without co solvent showed that these products conform to the SNI 7182-2012 standars. The type of co-solvent only affectedon biodiesel yield dan not affected on biodiesel quality (viscosity, density and acid value).  ABSTRAKTujuan penelitian ini adalah untuk mempelajari pengaruh jenis co-solvent (n-Hexane, chloroform dan tanpa co-solvent) terhadap rendemen dan mutu biodiesel secara trasesterifikasi in situ menggunakan radiasi gelombang mikro. Proses dilakukan pada daya gelombang mikro 450 watt, waktu reaksi 4 menit, perbandingan berat metanol terhadap bahan baku 25:1 dan jumlah katalis 5%. Parameter fisiko kimia dari produk biodiesel seperti viskositas, densitas dan angka asam di analisa dan dibandingkan dengan standar SNI 7182-2012 tentang biodiesel. Hasil penelitian menunjukkan rendemen maksimum biodiesel sebesar 78,32% diperoleh dengan menggunakan co-solvent chloroform. Hasil pengujian  karakteristik fisiko kimia (viskositas, densitas dan angka asam) dari produk biodiesel menggunakan co-solvent n-Hexane, chloroform dan tanpa co-solvent menunjukkan bahwa semua parameter ini masih memenuhi standar SNI 1782-2012 tentang biodiesel. Jenis co-solvent hanya berpengaruh pada rendemen biodiesel dan tidak berpengaruh terhadap mutu biodiesel (viskositas, densitas dan bilangan asam).Kata kunci: co-solvent, in situ transesterifikasi, microwave, rendemen, mutu   

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