Гальваномагнитные свойства в анизотропных слоистых пленках на основе халькогенидов висмута

In anisotropic layered films of a multicomponent n-Bi1.92In0.02Te2.85Se0.15 solid solution in strong magnetic fields from 2 to 14 T at low temperatures, quantum oscillations of magnetoresistance associated with surface states of electrons in 3D topological insulators were studied. From the analysis of the spectral distribution of the amplitudes of quantum oscillations of magnetoresistance, the main parameters of the Dirac fermion surface states are determined. A comparison of the results with the data obtained by the method of scanning tunnel spectroscopy was carried out. It is shown that a high surface concentration determines the contribution of the Dirac fermion surface states to the thermoelectric properties of n-Bi1.92In0.02Te2.85Se0.15.

Effect of Microalloying with Ti or Cr on the Corrosion Behavior of Al-Ni-Y Amorphous Alloys

The effect of microalloying with Ti or Cr on the corrosion behavior of Al-Ni-Y amorphous alloys in 0.1 M NaCl solution was studied by potentiodynamic polarization, Mott-Schottky, and x-ray photoelectron spectroscopy techniques. Microalloying with Ti or Cr could greatly improve the corrosion resistance of Al-Ni-Y amorphous alloys. A high surface concentration of Ti or Cr in the passive films was detected, which should be responsible for the improved corrosion resistance compared to the control sample. The possible process of Ti or Cr involved in the passive films was proposed in terms of the point defect model and the vacancy diffusion mechanism. Furthermore, the effect of Ti was stronger than Cr because of the higher film resistance as well as the higher surface concentration. The different passivation abilities and atomic radiuses between Ti and Cr were presented to explain the better microalloying effect of Ti compared to Cr.

Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC

Al doping of 4H-SiC with high surface concentration and deep depth profile is found to be realized by irradiating single-pulse excimer laser to an Al film deposited on the surface. Optical emission spectra suggest that high-temperature molten Al is produced behind the laser-generated high-density Al plasma and Al is diffused from the molten Al into 4H-SiC. The Al doping depth reaches to ~200 nm by irradiating a single laser pulse. A pn junction diode fabricated by the doping with the molten Al shows on/off ratio over 10 orders of magnitude.

Sugarcane molasses as a pseudocapacitive material for supercapacitors

Carbons from cane molasses with 8 m2 g−1 BET area yielded capacitances up to 153 F g−1 at 0.5 mV s−1 in 1 M H2SO4, with 35.2% pseudocapacitance contribution, due to the high surface concentration of quinone and carbonyl groups.

Heteropoly Compounds: Efficient Superacid Catalysts

ABSTRACTOur recent studies on the acidity and acid catalysis of heteropoly compounds are described, together with a brief introduction of the background. High catalytic activities were observed due to the combination of their superacidity, pseudoliquid behavior, acid-base bifunctionality and/or high surface concentration of proton. It was also shown how the acid strength and the number of acid sites as well as their tertiary structure were controlled by the constituent elements (heteroand addenda-atoms and counter cations), and how those properties were correlated with the catalytic activities

Fabrication of Ultra-Shallow P+-N and N+-P Junctions by Diffusion From Selectively Deposited, Ion-Implanted and In-Situ Doped Si0.7Ge0.3

ABSTRACTSelectively deposited Si0.7Ge0.3 has been investigated as a potential diffusion source for fabricating ultra-shallow junctions in Si. Rapid thermal chemical vapor deposition (RTCVD) was used to selectively deposit Si0.7Ge0.3 on Si using SiH2C12, GeH4, and H2. Both ionimplanted and in-situ doped Si0.7Ge0.3 were considered as a diffusion source for fabricating ultra-shallow junctions. In-situ doping was achieved with B2H6 and PH3 for p-type and n-type doping, respectively. Boron and phosphorus diffusion in ion-implanted Si0.7Ge0.3 was investigated and modeled using SSUPREM4. Diffusion from implanted and in-situ doped Si0.7Ge0.3 in Si was also studied and modeled. Boron diffusivities in Si0.7Ge0.3 were found to be approximately 10 times greater than in Si, while phosphorus diffusivities were over 100 times greater in Si0.7Ge0.3. The faster dopant diffusivities in Si0.7Ge0.3 allow high surface concentration, abrupt diffusion profiles to be formed in Si. Gated, p-n junction diodes with junction depths as shallow as 140Å were fabricated and tested to study the quality of the diffusions from Si0.7Ge0.3.

A Steady-State Model for Coupled Defect Impurity Diffusion in Silicon

We extend our earlier model which was proposed to explain tails in the diffusion profiles of high concentration boron and phosphorus in silicon. Our quasi-steady-state approach is generalized here to include both vacancies (V) and interstitials (I) at equivalent levels. I-V recombination is regarded as near local equilibrium, occurring through reactions of the defects with defect-impurity pairs. This approach leads to the well-known plateau, kink and tail in high surface concentration P diffusions in Si and to the less well recognized tails in B as well. Our extended model, in its simplest form, allows a more complete and less restrictive treatment of Au diffusion in Si. An important advantage is the direct inclusion of these defect-impurity interactions and the resulting gradients in the defect concentrations.