Fabrication of Ultra-Shallow P+-N and N+-P Junctions by Diffusion From Selectively Deposited, Ion-Implanted and In-Situ Doped Si0.7Ge0.3

1993 ◽  
Vol 303 ◽  
Author(s):  
D.T. Grider ◽  
M.C. ÖztÜrk ◽  
J.J. Wortman ◽  
G.S. Harris ◽  
D.M. Maher
Keyword(s):  
High Surface ◽  
Chemical Vapor ◽  
Surface Concentration ◽  
Shallow Junctions ◽  
High Surface Concentration ◽  
Diffusion Source ◽  
Ultra Shallow Junctions ◽  
P Type ◽  
Ion Implanted

ABSTRACTSelectively deposited Si0.7Ge0.3 has been investigated as a potential diffusion source for fabricating ultra-shallow junctions in Si. Rapid thermal chemical vapor deposition (RTCVD) was used to selectively deposit Si0.7Ge0.3 on Si using SiH2C12, GeH4, and H2. Both ionimplanted and in-situ doped Si0.7Ge0.3 were considered as a diffusion source for fabricating ultra-shallow junctions. In-situ doping was achieved with B2H6 and PH3 for p-type and n-type doping, respectively. Boron and phosphorus diffusion in ion-implanted Si0.7Ge0.3 was investigated and modeled using SSUPREM4. Diffusion from implanted and in-situ doped Si0.7Ge0.3 in Si was also studied and modeled. Boron diffusivities in Si0.7Ge0.3 were found to be approximately 10 times greater than in Si, while phosphorus diffusivities were over 100 times greater in Si0.7Ge0.3. The faster dopant diffusivities in Si0.7Ge0.3 allow high surface concentration, abrupt diffusion profiles to be formed in Si. Gated, p-n junction diodes with junction depths as shallow as 140Å were fabricated and tested to study the quality of the diffusions from Si0.7Ge0.3.

Heavily Doped Ultra-Shallow Junctions Formed by an ArF Excimer Laser

1988 ◽  
Vol 129 ◽  
Author(s):  
S. Yoshioka ◽  
J. Wada ◽  
H. Saeki ◽  
S. Matsumoto
Keyword(s):  
Excimer Laser ◽  
High Surface ◽  
Single Crystal Silicon ◽  
Surface Concentration ◽  
Crystal Silicon ◽  
Ultrashallow Junctions ◽  
High Surface Concentration ◽  
Heavily Doped ◽  
Ultra Shallow Junctions ◽  
Argon Fluoride

ABSTRACTBoron doping of single crystal silicon using an argon fluoride excimer laser with diborane gas has been performed. Diborane gas has an absorption at 193nm, which leads to gas phase photodecomposition of the diborane. Utilizing the photolyic effect, we obtained high surface concentration and ultrashallow junctions of 5×1020 cm−3 and 0.1 µm, respectively. The photolytic effect enhances the incorporation of the dopant species.

Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H Films Deposited at Low Substrate Temperatures

2006 ◽  
Vol 910 ◽  
Author(s):  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Germanium Alloy ◽  
Temperature Deposition ◽  
P Type ◽  
Cubic Silicon Carbide ◽  
Charged Defects ◽  
Substrate Temperatures

AbstractWe have investigated properties of nanocrystalline hydrogenated cubic silicon carbide (nc-3C-SiC:H) and silicon carbide: germanium alloy (nc-SiC:Ge:H) films deposited by hot-wire chemical vapor deposition (HWCVD) at low temperatures of about 300°C. we found that the density of charged defects was strongly influenced by grain size of the films. In-situ doping into nc-3C-SiC:H films was also carried out. N-type nc-3C-SiC:H films were successfully deposited by using phosphine (PH3) and hexamethyldisilazane (HMDS) as dopants. We found that HMDS is an effective n-type dopant for low temperature deposition of nc-3C-SiC:H films by HWCVD. For the deposition of p-type nc-3C-SiC:H with trimethylaluminum (TMA), it was found that the substrate temperature of above 300°C is required to activate the acceptors. We added dimethylgermane (DMG) into mixture of MMS and H2 to prepare nc-SiC:Ge:H films. The nc-SiC:Ge:H films with Ge mole fraction of 1.9% were successfully deposited.

A Steady-State Model for Coupled Defect Impurity Diffusion in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
F. F. Morehead ◽  
R. F. Lever
Keyword(s):  
Steady State ◽  
High Surface ◽  
Local Equilibrium ◽  
Surface Concentration ◽  
Extended Model ◽  
High Concentration ◽  
Steady State Model ◽  
High Surface Concentration ◽  
Phosphorus In Silicon ◽  
Diffusion Profiles

AbstractWe extend our earlier model which was proposed to explain tails in the diffusion profiles of high concentration boron and phosphorus in silicon. Our quasi-steady-state approach is generalized here to include both vacancies (V) and interstitials (I) at equivalent levels. I-V recombination is regarded as near local equilibrium, occurring through reactions of the defects with defect-impurity pairs. This approach leads to the well-known plateau, kink and tail in high surface concentration P diffusions in Si and to the less well recognized tails in B as well. Our extended model, in its simplest form, allows a more complete and less restrictive treatment of Au diffusion in Si. An important advantage is the direct inclusion of these defect-impurity interactions and the resulting gradients in the defect concentrations.

In Situ S-Doping of Cubic Boron Nitride Thin Films by Plasma Enhanced Chemical Vapor Deposition

2010 ◽  
Vol 638-642 ◽  
pp. 2956-2961 ◽  
Author(s):  
Hang Sheng Yang ◽  
Norihiko Kurebayashi ◽  
Toyonobu Yoshida
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Cubic Phase ◽  
Film Adhesion ◽  
Boron Source ◽  
P Type

In situ sulphur doping of cubic boron nitride (cBN) films was investigated by adding H2S into a plasma-enhanced chemical vapor deposition system. It was found that the nucleation of cBN was suppressed severely with a very low H2S concentration, while cBN could be grown continuously even at a H2S concentration as high as that of the boron source after its nucleation. Accordingly, S was incorporated into cBN films meanwhile keeping the cubic phase concentration as high as 95%. And a rectification ratio of approximately 10 5 was observed at room temperature for heterojunction diodes prepared by depositing S-doped cBN films on p-type silicon substrates, which suggests the possibility of an n-type-like doping. Moreover, 1500K post annealing of cBN films in H2 atmosphere was found to be able to release the residual compressive stress evidently. Thus, film adhesion strength increased markedly, and cBN films reached a thickness over 200 nm without peeling off from silicon and quartz substrates in air after 9 months.

Effect of Microalloying with Ti or Cr on the Corrosion Behavior of Al-Ni-Y Amorphous Alloys

CORROSION ◽  
10.5006/2451 ◽  
2017 ◽  
Vol 74 (1) ◽  
pp. 66-74 ◽  
Author(s):  
L.M. Zhang ◽  
A.L. Ma ◽  
H.X. Hu ◽  
Y.G. Zheng ◽  
B.J. Yang ◽  
...  
Keyword(s):  
Corrosion Resistance ◽  
Corrosion Behavior ◽  
Photoelectron Spectroscopy ◽  
Amorphous Alloys ◽  
Diffusion Mechanism ◽  
High Surface ◽  
Control Sample ◽  
Surface Concentration ◽  
Passive Films ◽  
High Surface Concentration

The effect of microalloying with Ti or Cr on the corrosion behavior of Al-Ni-Y amorphous alloys in 0.1 M NaCl solution was studied by potentiodynamic polarization, Mott-Schottky, and x-ray photoelectron spectroscopy techniques. Microalloying with Ti or Cr could greatly improve the corrosion resistance of Al-Ni-Y amorphous alloys. A high surface concentration of Ti or Cr in the passive films was detected, which should be responsible for the improved corrosion resistance compared to the control sample. The possible process of Ti or Cr involved in the passive films was proposed in terms of the point defect model and the vacancy diffusion mechanism. Furthermore, the effect of Ti was stronger than Cr because of the higher film resistance as well as the higher surface concentration. The different passivation abilities and atomic radiuses between Ti and Cr were presented to explain the better microalloying effect of Ti compared to Cr.

Characterization of In Situ P-Type and N-Type Doped Si and GeXSi1−X Films Grown by Low Temperature Remote Plasma Chemical Vapor Deposition

1992 ◽  
Vol 268 ◽  
Author(s):  
S. Thomas ◽  
J. Irby ◽  
D. Kinosky ◽  
R. Qian ◽  
I. Iqbal ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Future Generation ◽  
Doping Profile ◽  
Remote Plasma ◽  
Plasma Chemical Vapor Deposition ◽  
P Type

ABSTRACTLow temperature Si and Si1−xGex epitaxy is one of the major thrusts in the trend towards low temperature Si processing for future generation ULSI circuits and novel Si-based devices. A remote plasma-enhanced chemical vapor deposition (RPCVD) technique has been developed to achieve Si homoepitaxy and Si1−xGex heteroepitaxy at low temperatures (≤450'C). P-type films have been grown by introducing 90 ppm or 5000 ppm B2H6/He into the system during the growth process to achieve in situ electrically active boron doping. A mesa diode structure with minimal thermal budget in the fabrication process has been employed to evaluate the properties of the boron-doped Si and Si1−xGex films grown at 450°C by RPCVD. Leakage current densities are reduced for diodes grown at 14–18 W (40–50 Å/min. growth rates) compared to similar devices grown at 6.6 W (5 Å/min.). N-type films have been grown by the introduction of 50 ppm PH3/He. Secondary ion mass spectroscopy (SIMS) has been employed to analyze the boron and phosphorus incorporation efficiencies and doping profiles under different conditions. Boron and phosphorus doping profile transitions as sharp as 50–100 Å/decade have been achieved. Transmission electron microscopy (TEM) has been used to investigate the microstructure of the B-doped films.

A New Model of Tail Diffusion of Phosphorus and Boron in Silicon

1985 ◽  
Vol 52 ◽  
Author(s):  
Frederick F. Morehead ◽  
R. F. Lever
Keyword(s):  
Concentration Profile ◽  
Process Simulation ◽  
Low Temperatures ◽  
High Surface ◽  
Surface Concentration ◽  
Transient Effects ◽  
Phosphorus Diffusion ◽  
High Surface Concentration ◽  
Conventional Models ◽  
Normal Processing

ABSTRACTIt is well known that high surface concentration phosphorus diffusion leads to deeply penetrating “tails” in its concentration profile. At 700 °C the tail diffusivity exceeds that of low concentration phosphorus by a factor of a thousand. Less spectacular, but very significant tailing also affects tioron, making the conventional models contained in commonly available process simulation programs quite inaccurate for boron diffusions with high surface concentrations. We show that the observed tailing can be accounted for by a model whose central assumption is the local equality of dopant and oppositely directed defect fluxes. As predicted by the model, the effect is greatest for normal processing at low temperatures for high surface concentrations. It is minimal for the high temperatures of rapid thermal annealing and unrelated to transient effects.

Sign in / Sign up

Export Citation Format

Share Document