A Comparison of Spike, Flash, SPER and Laser Annealing for 45nm CMOS

2003 ◽  
Vol 765 ◽  
Author(s):  
R. Lindsay ◽  
B. Pawlak ◽  
J. Kittl ◽  
K. Henson ◽  
C. Torregiani ◽  
...  
Keyword(s):  
Low Power ◽  
Thermal Annealing ◽  
Solid Solubility ◽  
Laser Annealing ◽  
Solid Phase ◽  
Conventional Approach ◽  
Junction Depth ◽  
Flash Annealing ◽  
Junction Formation ◽  
Spike Annealing

AbstractDue to integration concerns, the use of meta-stable junction formation approaches like laser thermal annealing (LTA), solid phase epitaxial regrowth (SPER), and flash annealing has largely been avoided for the 90nm CMOS node. Instead fast-ramp spike annealing has been optimised along with co-implantation to satisfy the device requirements, often with the help from thin offset spacers. However for the 65nm and 45nm CMOS node it is widely accepted that this conventional approach will not provide the required pMOS junctions, even with changes in the transistor architecture.In this work, we will compare junction performance and integratablity of fast-ramp spike, flash, SPER and laser annealing down to 45nm CMOS. The junction depth, abruptness and resistance offered by each approach are balanced against device uniformity, deactivation and leakage. Results show that the main contenders for the 45nm CMOS are SPER and flash annealing – but both have to be rigorously optimised for regrowth rates, amorphous positioning and dopant and co-implant profiles. From the two, SPER offers the best junction abruptness (<1nm/dec) with leakage suitable for low power applications, while the flash anneal has the benefit of higher solid solubility (>4E20at/cm3) and less transistor modifications. As expected, Ge and F co-implanted spike annealed junctions do not reach the 45nm node requirements. For full-melt LTA, poly deformation on isolation can be reduced but geometry effects result in unacceptable junction non-uniformity.

Optimisation of Junctions formed by Solid Phase Epitaxial Regrowth for sub-70nm CMOS

2002 ◽  
Vol 717 ◽  
Author(s):  
Richard Lindsay ◽  
Bartlomiej J. Pawlak ◽  
Peter Stolk ◽  
Karen Maex
Keyword(s):  
Solid Solubility ◽  
Laser Annealing ◽  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Dopant Profile ◽  
Integration Problems ◽  
P Type ◽  
Reduced Mobility ◽  
Spike Annealing ◽  
Equilibrium Solid Solubility

AbstractFor the 70nm CMOS node, it is anticipated that conventional implantation and spike annealing approaches, even with pre-amorphisation and co-implantation, are unlikely to provide pMOS junctions consistent with the ITRS requirements. Here the junction performance is limited by equilibrium solid solubility.As laser annealing and in-situ doping techniques currently have unsolved integration problems, there is a renewed interest in using solid phase epitaxial regrowth (SPER) to form ultra-shallow metastable junctions. Such junctions have the potential to have an active dopant profile similar to the as-implanted profile. This offers above equilibrium solid solubility and abrupt profiles compatible with 70nm and even 45nm nodes. However there are concerns about residual defects, deactivation, diffusion and uniformity.In this paper we show how the Ge, F and B implant and SPER anneal can be optimised for abrupt, uniform and highly activated B junctions. There is latitude for higher doses and energies than conventional implants, however results show that this may lead to clustering causing enhanced deactivation and reduced mobility. We give attention to the probing issues involved in characterising partially annealed junctions.With this approach, p-type junctions having a sheet resistance of 265 ohms/sq and depth of 22nm are realised which are compatible with 70nm and potentially 45nm CMOS nodes.

Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors

1996 ◽  
Vol 53 (8) ◽  
pp. 4757-4769 ◽  
Author(s):  
G. Vitali ◽  
L. Palumbo ◽  
M. Rossi ◽  
G. Zollo ◽  
C. Pizzuto ◽  
...  
Keyword(s):  
Low Power ◽  
Laser Annealing ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Compound Semiconductors ◽  
Solid Phase Epitaxy ◽  
Pulsed Laser Annealing

Optimization of Fluorine Co-implantation for PMOS Source and Drain Extension Formation for 65nm Technology Node

2004 ◽  
Vol 810 ◽  
Author(s):  
H. Graoui ◽  
M. Hilkene ◽  
B. McComb ◽  
M. Castle ◽  
S. Felch ◽  
...  
Keyword(s):  
Solubility Limit ◽  
Junction Depth ◽  
Solid Solubility Limit ◽  
Enhanced Diffusion ◽  
Technology Node ◽  
Energy Needs ◽  
Junction Formation ◽  
Boron Implantation ◽  
The Right ◽  
Spike Annealing

ABSTRACTThe main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90 nm technology node ITRS requirements. To meet the 65 nm technology requirements many studies have used fluorine co-implantation with boron and Si+ or Ge+ pre-amorphization (PAI) and spike annealing. Although using BF+2 can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that for the fluorine to successfully reduce TED its energy needs to be well optimized with respect to the boron's, therefore BF+2 does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy when a deep or shallow PAI is used. We also demonstrate that the fluorine dose needs to be carefully optimized otherwise a reverse effect can be observed. We will also show that the optimized junction depends less on the Ge+ energies between 2 keV and 20 keV and when HF etch is implemented after Ge+ PAI, improvements in both the junction depth and the sheet resistance are observed.

Defect Control During Epitaxial Regrowth by Rapid Thermal Annealing

1982 ◽  
Vol 13 ◽  
Author(s):  
H. Baumgart ◽  
G. K. Celler ◽  
D. J. Lischner ◽  
McD. Robinson ◽  
T. T. Sheng
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Laser Annealing ◽  
Solid Phase ◽  
Good Control ◽  
Temperature Gradients ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Incoherent Light ◽  
Defect Control

ABSTRACTRapid Thermal Annealing (RTA) with tungsten halogen lamps provides excellent regrowth of silicon layers damaged by ion implantation. In addition to minimizing dopant redistribution, the inherent advantage of this technique is good control of temperature gradients. The latter is instrumental in reducing the density of extended defects in the annealed samples. In contrast, solid phase laser annealing, which involves steep temperature gradients, always leaves interstitial dislocation loops and point defect clusters. We present a comparative study of crystal quality following laser processing and incoherent light annealing as well as furnace annealing of As, P and B ion implanted Si wafers.

Analysis and Optimisation of New Implantation and Activation Mechanisms in Ultra Shallow Junction Implants using Scanning Spreading Resistance Microscopy (SSRM)

2006 ◽  
Vol 912 ◽  
Author(s):  
Pierre Eyben ◽  
Simone Severi ◽  
Ray Duffy ◽  
Bartek Pawlak ◽  
Emmanuel Augendre ◽  
...  
Keyword(s):  
Solid Phase ◽  
Lateral Diffusion ◽  
Spreading Resistance ◽  
Mos Devices ◽  
Epitaxial Regrowth ◽  
Junction Formation ◽  
Activation Mechanisms ◽  
Spike Annealing ◽  
The Impact ◽  
Millisecond Laser

AbstractWithin this paper we have demonstrated the unique capability of scanning spreading resistance microscopy (SSRM) in order to evaluate and optimize the recent approaches towards the formation of advanced p-MOS devices. As shown in this paper, such an optimization requires a detailed 2D-analysis on completely processed devices as two-dimensional interactions may cause (unexpected) lateral diffusion and (de) activation of underlying profiles. Emphasis will be on junction formation using Ge- pre-amorphization and carbon based cocktail implantation coupled with activation based on solid phase epitaxial regrowth and/or millisecond laser anneal. In the case of a Ge-pre-amorphization implant followed by solid phase epitaxial regrowth, SSRM shows an obvious relationship between the presence of defects in the end of range region and halo implant de-activation. Based on the quantified 2D-profiles we can extract the lateral and vertical junction depths as well as the lateral and vertical abruptness of the extension region. A drastic reduction of the lateral diffusion for the cocktail implant versus the standard reference devices with classical spike annealing is eminent. At the same an important reduction of the lateral diffusion of the source/drain implants (HDD) under the spacer can be seen. The SSRM results also highlight the impact of different activation mechanisms on the channel implants (in particular on the shape of the halo pockets).

Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T. P. Smith ◽  
P. J. Stiles ◽  
W. M. Augustyniak ◽  
W. L. Brown ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Semiconductor Device ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Nitride Layer ◽  
High Dose ◽  
Infrared Transmission ◽  
Furnace Annealing

ABSTRACTFormation of buried insulating layers and redistribution of impurities during annealing are important processes in new semiconductor device technologies. We have studied pulsed ruby laser and furnace annealing of high dose (D>1017 N/cm2) 50 KeV nitrogen implanted silicon. Using He Back scattering and channeling, X-ray diffraction, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation and nitride formation. As has been previously reported, during furnace annealing at or above 1200C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4 ) layer. [1–4] In contrast, pulsed laser annealing produces a buried amorphous silicon nitride layer filled with voids or bubbles below a layer of polycrystalline silicon.

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