Optimisation of Junctions formed by Solid Phase Epitaxial Regrowth for sub-70nm CMOS

2002 ◽  
Vol 717 ◽  
Author(s):  
Richard Lindsay ◽  
Bartlomiej J. Pawlak ◽  
Peter Stolk ◽  
Karen Maex
Keyword(s):  
Solid Solubility ◽  
Laser Annealing ◽  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Dopant Profile ◽  
Integration Problems ◽  
P Type ◽  
Reduced Mobility ◽  
Spike Annealing ◽  
Equilibrium Solid Solubility

AbstractFor the 70nm CMOS node, it is anticipated that conventional implantation and spike annealing approaches, even with pre-amorphisation and co-implantation, are unlikely to provide pMOS junctions consistent with the ITRS requirements. Here the junction performance is limited by equilibrium solid solubility.As laser annealing and in-situ doping techniques currently have unsolved integration problems, there is a renewed interest in using solid phase epitaxial regrowth (SPER) to form ultra-shallow metastable junctions. Such junctions have the potential to have an active dopant profile similar to the as-implanted profile. This offers above equilibrium solid solubility and abrupt profiles compatible with 70nm and even 45nm nodes. However there are concerns about residual defects, deactivation, diffusion and uniformity.In this paper we show how the Ge, F and B implant and SPER anneal can be optimised for abrupt, uniform and highly activated B junctions. There is latitude for higher doses and energies than conventional implants, however results show that this may lead to clustering causing enhanced deactivation and reduced mobility. We give attention to the probing issues involved in characterising partially annealed junctions.With this approach, p-type junctions having a sheet resistance of 265 ohms/sq and depth of 22nm are realised which are compatible with 70nm and potentially 45nm CMOS nodes.

A Comparison of Spike, Flash, SPER and Laser Annealing for 45nm CMOS

2003 ◽  
Vol 765 ◽  
Author(s):  
R. Lindsay ◽  
B. Pawlak ◽  
J. Kittl ◽  
K. Henson ◽  
C. Torregiani ◽  
...  
Keyword(s):  
Low Power ◽  
Thermal Annealing ◽  
Solid Solubility ◽  
Laser Annealing ◽  
Solid Phase ◽  
Conventional Approach ◽  
Junction Depth ◽  
Flash Annealing ◽  
Junction Formation ◽  
Spike Annealing

AbstractDue to integration concerns, the use of meta-stable junction formation approaches like laser thermal annealing (LTA), solid phase epitaxial regrowth (SPER), and flash annealing has largely been avoided for the 90nm CMOS node. Instead fast-ramp spike annealing has been optimised along with co-implantation to satisfy the device requirements, often with the help from thin offset spacers. However for the 65nm and 45nm CMOS node it is widely accepted that this conventional approach will not provide the required pMOS junctions, even with changes in the transistor architecture.In this work, we will compare junction performance and integratablity of fast-ramp spike, flash, SPER and laser annealing down to 45nm CMOS. The junction depth, abruptness and resistance offered by each approach are balanced against device uniformity, deactivation and leakage. Results show that the main contenders for the 45nm CMOS are SPER and flash annealing – but both have to be rigorously optimised for regrowth rates, amorphous positioning and dopant and co-implant profiles. From the two, SPER offers the best junction abruptness (<1nm/dec) with leakage suitable for low power applications, while the flash anneal has the benefit of higher solid solubility (>4E20at/cm3) and less transistor modifications. As expected, Ge and F co-implanted spike annealed junctions do not reach the 45nm node requirements. For full-melt LTA, poly deformation on isolation can be reduced but geometry effects result in unacceptable junction non-uniformity.

Integration of Solid Phase Epitaxial Re-Growth, Flash and Sub-Melt Laser Annealing for S/D Junctions in CMOS Digital Technology

2006 ◽  
Vol 912 ◽  
Author(s):  
Simone Severi ◽  
Emmanuel Augendre ◽  
Kristin De Meyer
Keyword(s):  
Digital Technology ◽  
Laser Annealing ◽  
Solid Phase ◽  
Significant Gain ◽  
Short Channel Effects ◽  
Short Channel ◽  
Annealing Conditions ◽  
Epitaxial Regrowth ◽  
Channel Effects ◽  
As Solid Phase

AbstractSeveral aspects of the integration of diffusion-less junctions in a NMOS and PMOS conventional flows are evaluated. Processes as Solid Phase Epitaxial Regrowth (SPER) or advanced annealing techniques, as flash or laser, demonstrates benefits not only on the 1D junction profiles but also on the transistor characteristics. An optimization of the implants and of the annealing conditions lead to improved or equivalent transistors performance and short channel effects control compared to the conventional spike RTA process. A significant gain in the overlap capacitance could allow for reduced CV/I. Furthermore the junction leakage can be lowered down to the values reached with the conventional spike RTA process.

Analysis and Optimisation of New Implantation and Activation Mechanisms in Ultra Shallow Junction Implants using Scanning Spreading Resistance Microscopy (SSRM)

2006 ◽  
Vol 912 ◽  
Author(s):  
Pierre Eyben ◽  
Simone Severi ◽  
Ray Duffy ◽  
Bartek Pawlak ◽  
Emmanuel Augendre ◽  
...  
Keyword(s):  
Solid Phase ◽  
Lateral Diffusion ◽  
Spreading Resistance ◽  
Mos Devices ◽  
Epitaxial Regrowth ◽  
Junction Formation ◽  
Activation Mechanisms ◽  
Spike Annealing ◽  
The Impact ◽  
Millisecond Laser

AbstractWithin this paper we have demonstrated the unique capability of scanning spreading resistance microscopy (SSRM) in order to evaluate and optimize the recent approaches towards the formation of advanced p-MOS devices. As shown in this paper, such an optimization requires a detailed 2D-analysis on completely processed devices as two-dimensional interactions may cause (unexpected) lateral diffusion and (de) activation of underlying profiles. Emphasis will be on junction formation using Ge- pre-amorphization and carbon based cocktail implantation coupled with activation based on solid phase epitaxial regrowth and/or millisecond laser anneal. In the case of a Ge-pre-amorphization implant followed by solid phase epitaxial regrowth, SSRM shows an obvious relationship between the presence of defects in the end of range region and halo implant de-activation. Based on the quantified 2D-profiles we can extract the lateral and vertical junction depths as well as the lateral and vertical abruptness of the extension region. A drastic reduction of the lateral diffusion for the cocktail implant versus the standard reference devices with classical spike annealing is eminent. At the same an important reduction of the lateral diffusion of the source/drain implants (HDD) under the spacer can be seen. The SSRM results also highlight the impact of different activation mechanisms on the channel implants (in particular on the shape of the halo pockets).

Effects of Electrically Active Impurities on the Epitaxial Regrowth Rate of Amorphized Silicon and Germanium

1981 ◽  
Vol 10 ◽  
Author(s):  
I. Suni ◽  
G. Göltz ◽  
M.-A. Nicolet ◽  
S. S. Lau
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Concentration Level ◽  
Solid Phase ◽  
Surface Layers ◽  
Furnace Annealing ◽  
Epitaxial Regrowth ◽  
Silicon And Germanium ◽  
P Type ◽  
Temperature Furnace

The influence of electrically active n-type (75As) and p-type (11B) impurities on the solid phase epitaxial regrowth of ion-implanted amorphized Si<100> and Ge<100> has been studied for low temperature furnace annealing. Both types of impurity increase the rate of regrowth of both silicon and germanium at a concentration level of 1020 cm−3 . Above this level, 75As retards regrowth in germanium. In compensated surface layers, the regrowth rate slows down to the values observed in self-implanted or intrinsic crystals for both silicon and germanium. The results can be qualitatively explained in terms of electrically induced generation of point defects at the amorphous-crystalline interface.

The Novel Dopant Profile Inspection Methodology by FIB

2010 ◽  
Author(s):  
Po Fu Chou ◽  
Li Ming Lu
Keyword(s):  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Real Sample ◽  
Physical Analysis ◽  
The Novel ◽  
High Contrast ◽  
Dopant Profile ◽  
P Type

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.

Performance of (110) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

2011 ◽  
Vol 88 (7) ◽  
pp. 1265-1268
Author(s):  
A. Ohata ◽  
Y. Bae ◽  
T. Signamarcheix ◽  
J. Widiez ◽  
B. Ghyselen ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth

Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation

1989 ◽  
Vol 54 (1) ◽  
pp. 42-44 ◽  
Author(s):  
B. T. Chilton ◽  
B. J. Robinson ◽  
D. A. Thompson ◽  
T. E. Jackman ◽  
J.‐M. Baribeau
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Strained Layer ◽  
Epitaxial Regrowth ◽  
Layer Structures
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