Advanced source/drain engineering for box-shaped ultrashallow junction formation using laser annealing and pre-amorphization implantation in sub-100-nm SOI CMOS

2002 ◽  
Vol 49 (10) ◽  
pp. 1748-1754 ◽  
Author(s):  
Seong-Dong Kim ◽  
Cheol-Min Park ◽  
J.C.S. Woo
Keyword(s):  
Laser Annealing ◽  
Junction Formation ◽  
Ultrashallow Junction ◽  
Soi Cmos

scholarly journals Laser Annealing of Self-Aligned As+ Implants in Contact Windows for Ultrashallow Junction Formation.

2019 ◽  
Vol 23 (1) ◽  
pp. 19-27
Author(s):  
Cleber Biasotto ◽  
Viktor Gonda ◽  
Lis K. Nanver ◽  
J. Van der Cingel ◽  
V. Jovanović
Keyword(s):  
Laser Annealing ◽  
Junction Formation ◽  
Ultrashallow Junction

Ultra-Shallow Junction Formation by a Non-Melting Process; Double-Pulsed Green Laser Annealing

2005 ◽  
Vol 862 ◽  
Author(s):  
Toshio Kudo ◽  
Susumu Sakuragi ◽  
Kazunori Yamazaki
Keyword(s):  
Penetration Depth ◽  
Laser Annealing ◽  
Melting Process ◽  
Green Laser ◽  
Deep Penetration ◽  
Shallow Junction ◽  
Junction Formation ◽  
Ultra Shallow Junctions ◽  
Short Annealing ◽  
Overlap Ratio

AbstractIn order to investigate the possibility of nanosecond activation in the non-melting state, we adopted the method of double-pulsed green laser annealing (DPSS), controlling effectively the combined pulse width with two pulsed lasers (pulse duration: ˜100ns, frequency: 1kHz). We investigated the formation of ultra-shallow junctions (USJ) less than 10nm in spite of the deep penetration depth of the green wavelength in crystalline Si (˜1000nm). In order to limit the depth of B implant, a Ge pre-amorphization implant was performed at an energy of 3keV to a dose of 3E+14/cm2. After the pre-amorphization implant, a B implant was performed at 0.2kev and doses of 5E+14/cm2 and 1E+15/cm2. The implanted B dopants remain within the pre-amorphized Si layer. The double-pulsed laser irradiation was performed with a homogenized line beam of 0.1mm x 17mm, scanning a sample stage at a constant velocity of 10mm/s, that is, at an overlap ratio of 90%. The non-melting state was found to be in the pulse energy density range of E ≤ 780mJ/cm2 at a delay time of 300ns. Overcoming the issues of the short annealing time (˜<1μs) and the deep penetration depth (˜1000nm), we succeeded in the ultra-shallow junction formation beyond the 45nm CMOS node: maximum junction depth of 6nm, minimum sheet resistance of 0.65kohm/sq at a B dose of 1E+15/cm2, an abruptness of 1.4nm/dec.

PN junction formation in CdTe by ion implantation and pulsed ruby laser annealing

1981 ◽  
Vol 58 (3-4) ◽  
pp. 115-117 ◽  
Author(s):  
C. B. Norris ◽  
C. I. Westmark ◽  
G. Entine ◽  
S. A. Lis ◽  
H. B. Serreze
Keyword(s):  
Ion Implantation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Pn Junction ◽  
Junction Formation

Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation

2003 ◽  
Vol 208-209 ◽  
pp. 292-297 ◽  
Author(s):  
C. Dutto ◽  
E. Fogarassy ◽  
D. Mathiot ◽  
D. Muller ◽  
P. Kern ◽  
...  
Keyword(s):  
Pulse Duration ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Pn Junction ◽  
Junction Formation ◽  
Long Pulse ◽  
Ion Implanted
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