Thermal Boundary Resistance and Heat Diffusion in AlGaN/GaN HFETs

2003 ◽  
Vol 764 ◽  
Author(s):  
Konstantin A. Filippov ◽  
Alexander A. Balandin
Keyword(s):  
Temperature Rise ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Boundary Resistance ◽  
Heat Diffusion ◽  
Thermal Boundary Resistance ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

AbstractWe theoretically investigate the thermal boundary resistance and heat diffusion in AlGaN/GaN heterostructure field-effect transistors. Our calculations based on the diffuse mismatch model show that the thermal boundary resistance at the interface between GaN and SiC can strongly influence the temperature rise in the device channel.

scholarly journals The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

2003 ◽  
Vol 8 ◽  
Author(s):  
K.A. Filippov ◽  
A.A. Balandin
Keyword(s):  
Temperature Rise ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Boundary Resistance ◽  
Heat Diffusion ◽  
Thermal Boundary Resistance ◽  
Device Layer ◽  
Self Heating ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure field-effect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel.

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

2012 ◽  
Vol 9 (3-4) ◽  
pp. 911-914 ◽  
Author(s):  
Martin Mikulics ◽  
Hilde Hardtdegen ◽  
Andreas Winden ◽  
Alfred Fox ◽  
Michel Marso ◽  
...  
Keyword(s):  
Residual Strain ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

2000 ◽  
Vol 77 (2) ◽  
pp. 250-252 ◽  
Author(s):  
J. P. Ibbetson ◽  
P. T. Fini ◽  
K. D. Ness ◽  
S. P. DenBaars ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Surface States ◽  
Polarization Effects ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure
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