Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

2002 ◽  
Vol 75 (3) ◽  
pp. 387-389 ◽  
Author(s):  
R.M. Chu ◽  
Y.D. Zheng ◽  
Y.G. Zhou ◽  
P. Han ◽  
B. Shen ◽  
...  
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