Anomalous behavior of AlGaN∕GaN heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling

H. F. Sun; C. R. Bolognesi

doi:10.1063/1.2715032

Anomalous behavior of AlGaN∕GaN heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling

Applied Physics Letters ◽

10.1063/1.2715032 ◽

2007 ◽

Vol 90 (12) ◽

pp. 123505 ◽

Cited By ~ 20

Author(s):

H. F. Sun ◽

C. R. Bolognesi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Anomalous Behavior ◽

Cryogenic Temperatures ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.1412282 ◽

2001 ◽

Vol 79 (16) ◽

pp. 2651-2653 ◽

Cited By ~ 101

Author(s):

G. Simin ◽

A. Koudymov ◽

A. Tarakji ◽

X. Hu ◽

J. Yang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Collapse ◽

Strain Mechanism ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1589520 ◽

2003 ◽

Vol 21 (4) ◽

pp. 1844 ◽

Cited By ~ 158

Author(s):

Hideki Hasegawa ◽

Takanori Inagaki ◽

Shinya Ootomo ◽

Tamotsu Hashizume

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage ◽

Leakage Currents ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Impact of surface treatment under the gate on the current collapse of unpassivated AlGaN/GaN heterostructure field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/1/012 ◽

2005 ◽

Vol 21 (1) ◽

pp. 67-71 ◽

Cited By ~ 4

Author(s):

P Kordoš ◽

J Bernát ◽

D Gregušová ◽

M Marso ◽

H Lüth

Keyword(s):

Surface Treatment ◽

Field Effect ◽

Field Effect Transistors ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

Applied Physics Letters ◽

10.1063/1.1616648 ◽

2003 ◽

Vol 83 (14) ◽

pp. 2952-2954 ◽

Cited By ~ 196

Author(s):

Tamotsu Hashizume ◽

Shinya Ootomo ◽

Hideki Hasegawa

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Thermal distributions of surface states causing the current collapse in unpassivated AlGaN∕GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.1844610 ◽

2005 ◽

Vol 86 (1) ◽

pp. 012106 ◽

Cited By ~ 11

Author(s):

C. S. Oh ◽

C. J. Youn ◽

G. M. Yang ◽

K. Y. Lim ◽

J. W. Yang

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Surface States ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Influence of crystalline quality of low-temperature GaN cap layer on current collapse in AlGaN∕GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.2896311 ◽

2008 ◽

Vol 92 (10) ◽

pp. 103507 ◽

Cited By ~ 6

Author(s):

E. Waki ◽

T. Deguchi ◽

A. Nakagawa ◽

T. Egawa

Keyword(s):

Low Temperature ◽

Field Effect ◽

Field Effect Transistors ◽

Crystalline Quality ◽

Current Collapse ◽

Cap Layer ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Cited By ~ 40

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽

10.1063/5.0012615 ◽

2020 ◽

Vol 10 (7) ◽

pp. 075212

Author(s):

Guangyuan Jiang ◽

Yuanjie Lv ◽

Zhaojun Lin ◽

Yongxiong Yang ◽

Yang Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Electron Systems ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Applied Physics A ◽

10.1007/s003390100978 ◽

2002 ◽

Vol 75 (3) ◽

pp. 387-389 ◽

Cited By ~ 3

Author(s):

R.M. Chu ◽

Y.D. Zheng ◽

Y.G. Zhou ◽

P. Han ◽

B. Shen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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