Electrical Characterization of Some Native Insulators on Germanium

1986 ◽  
Vol 76 ◽  
Author(s):  
O. J. Gregory ◽  
E. E. Crisman ◽  
Lisa Pruitt ◽  
D. J. Hymes ◽  
James J. Rosenberg
Keyword(s):  
Compositional Data ◽  
Electrical Characterization ◽  
Interface State ◽  
Chemical Oxidation ◽  
Mos Capacitors ◽  
Chemical Technique ◽  
Ir Transmission ◽  
Wet Chemical ◽  
State Densities

ABSTRACTPreliminary characterization of two native insulators on germanium is reported. A technique for preparing oxide by a room temperature chemical technique (wet chemical oxidation) is described. Compositional data based on IR transmission and ellipsometry, as well as characteristics of MOS capacitors based on this film are given. Also, compositional and electrical characterization of nitrided atmospheric pressure oxides are reported here. These films have very low fixed charge and interface state densities, and show excellent potential for use as gate insulators in a germanium MOS technology.

Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs

2011 ◽  
Vol 276 ◽  
pp. 87-93
Author(s):  
Y.Y. Gomeniuk ◽  
Y.V. Gomeniuk ◽  
A. Nazarov ◽  
P.K. Hurley ◽  
Karim Cherkaoui ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Gate Oxide ◽  
Interface State ◽  
Channel Length ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Threshold Voltages

The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-κ LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO3/Si interface is presented and typical maxima of 1.2×1011 eV–1cm–2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 µm and 50 µm, respectively) are presented. The front channel mobility appeared to be 126 cm2V–1s–1 and 70 cm2V–1s–1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.

Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process

2017 ◽  
Vol 897 ◽  
pp. 331-334 ◽  
Author(s):  
Marilena Vivona ◽  
Patrick Fiorenza ◽  
Ferdinando Iucolano ◽  
Andrea Severino ◽  
Simona Lorenti ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Oxide Semiconductor ◽  
Semiconductor Interface ◽  
Mos Capacitors ◽  
High Temperature Process ◽  
Lower Temperature

This work reports on the physical and electrical characterization of the oxide/semiconductor interface in MOS capacitors with the SiO2 layer deposited by a high temperature process from dichlorosilane and nitrogen-based vapor precursors and subjected to a post deposition annealing process in N2O. Low interface state density (Dit ≈ 9.0×1011cm-2eV-1) was found at 0.2 eV from EC, which is comparable to the values typically obtained in other lower temperature deposited oxides (e.g., TEOS). A barrier height of 2.8 eV was derived from the Fowler-Nordheim plot, very close to the ideal value expected for SiO2/4H-SiC interface. Basing on these preliminary results, the integration in MOSFETs devices can be envisaged.

Degradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing

2014 ◽  
Vol 778-780 ◽  
pp. 541-544 ◽  
Author(s):  
Atthawut Chanthaphan ◽  
Takuji Hosoi ◽  
Yuki Nakano ◽  
Takashi Nakamura ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characterization ◽  
Interface State ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Interface Properties ◽  
Mos Capacitors ◽  
State Densities ◽  
Mobile Ions ◽  
The Impact

The impact of mobile ions intrinsically generated in thermally grown SiO2by high-temperature forming gas annealing (FGA) on the SiO2/4H-SiC interface properties was studied by means of electrical characterization of SiC metal-oxide-semiconductor (MOS) capacitors. Unlike Si devices, mobile ions located at the interfaces were found to cause a remarkable stretch-out of capacitance-voltage (C-V) curve near the accumulation condition, and the degree of stretch-out was more pronounced with increasing probe frequency. This suggests that the interface states with a long emission time constant are formed near the conduction band edge due to the mobile ions. To clarify this unusual phenomenon, several characterization techniques to evaluate interface state densities (Dit), including Terman, conductance, and C-ψsmethods, were employed. The Ditvalues estimated for SiO2/SiC interfaces with mobile ions were a few times as large as those without mobile ions.

A New Lithium Iron Phosphate LiFe2P3O10 Synthesized at 600 °C from Precursor Obtained by Wet Chemistry

2006 ◽  
Vol 972 ◽  
Author(s):  
Atmane Ait-Salah ◽  
Chintalapalle V Ramana ◽  
François Gendron ◽  
Jean-François Morhange ◽  
Alain Mauger ◽  
...  
Keyword(s):  
Lithium Iron Phosphate ◽  
Iron Phosphate ◽  
Voltage Range ◽  
Wet Chemistry ◽  
Cell Parameters ◽  
Antiferromagnetic Ordering ◽  
Chemical Technique ◽  
Wet Chemical ◽  
Wet Chemical Technique

AbstractWe present the synthesis and characterization of a novel lithium iron polyphosphate LiFe2P3O10 prepared by wet-chemical technique from nitrate precursors. The crystal system is shown to be monoclinic (P21/m space group) and the refined cell parameters are a=4.596 Å, b=8.566 Å, c=9.051 Å and β=97.46°. LiFe2P3O10 has a weak antiferromagnetic ordering below the Néel temperature TN=19 K. Electrochemical measurements carried out at 25 °C in lithium cell with LiPF6-EC-DEC electrolyte show a capacity 70 mAh/g in the voltage range 2.7-3.9 V.

Characterization of Wet Chemical Atomic Layer Etching of InGaAs

2021 ◽  
Vol 314 ◽  
pp. 95-98
Author(s):  
Tomoki Hirano ◽  
Kenya Nishio ◽  
Takashi Fukatani ◽  
Suguru Saito ◽  
Yoshiya Hagimoto ◽  
...  
Keyword(s):  
Surface Condition ◽  
Atomic Layer ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Etching Process ◽  
Wet Chemical ◽  
Oxide Removal ◽  
Atomic Layer Etching

In this work, we characterized the wet chemical atomic layer etching of an InGaAs surface by using various surface analysis methods. For this etching process, H2O2 was used to create a self-limiting oxide layer. Oxide removal was studied for both HCl and NH4OH solutions. Less In oxide tended to remain after the HCl treatment than after the NH4OH treatment, so the combination of H2O2 and HCl is suitable for wet chemical atomic layer etching. In addition, we found that repetition of this etching process does not impact on the oxide amount, surface roughness, and interface state density. Thus, nanoscale etching of InGaAs with no impact on the surface condition is possible with this method.

Optical and electrical characterization of atomic layer deposited (ALD) HfO2/p-GaAs MOS capacitors

2012 ◽  
Author(s):  
Anindita Das ◽  
Sanatan Chattopadhyay ◽  
Goutam K. Dalapati ◽  
Dongzhi Chi ◽  
M. K. Kumar
Keyword(s):  
Electrical Characterization ◽  
Atomic Layer ◽  
Mos Capacitors

Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers

2016 ◽  
Vol 858 ◽  
pp. 663-666
Author(s):  
Marilena Vivona ◽  
Patrick Fiorenza ◽  
Tomasz Sledziewski ◽  
Alexandra Gkanatsiou ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Interface State ◽  
State Density ◽  
Metal Oxide Semiconductor ◽  
Interface State Density ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Oxide Breakdown

In this work, the electrical properties of SiO2/SiC interfaces onto a 2°-off axis 4H-SiC layer were studied and validated through the processing and characterization of metal-oxide-semiconductor (MOS) capacitors. The electrical analyses on the MOS capacitors gave an interface state density in the low 1×1012 eV-1cm-2 range, which results comparable to the standard 4°-off-axis 4H-SiC, currently used for device fabrication. From Fowler-Nordheim analysis and breakdown measurements, a barrier height of 2.9 eV and an oxide breakdown of 10.3 MV/cm were determined. The results demonstrate the maturity of the 2°-off axis material and pave the way for the fabrication of 4H-SiC MOSFET devices on this misorientation angle.

scholarly journals Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

2020 ◽  
Vol 2020 ◽  
pp. 1-9 ◽  
Author(s):  
Sadia Muniza Faraz ◽  
Wakeel Shah ◽  
Naveed Ul Hassan Alvi ◽  
Omer Nur ◽  
Qamar Ul Wahab
Keyword(s):  
Conduction Band ◽  
Zno Nanorods ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Average Height ◽  
Zno Nanorod ◽  
Heterojunction Diode ◽  
Rectification Factor

The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (NSS) below the conduction band (CB) were extracted with the help of I-V and C-V and G-V measurements. The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 1012 to 5.83 × 1011 eV−1 cm−2 were obtained from 0.01 eV to 0.55 eV below the conduction band.

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