Evidence for Polycrystalline Si Surface Layer Formation by Argon Implantation and its Passivation by Atomic Hydrogen

1986 ◽  
Vol 76 ◽  
Author(s):  
H.-C. Chien ◽  
S. Ashok ◽  
J. H. Slowik
Keyword(s):  
Atomic Hydrogen ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barriers ◽  
Low Energy ◽  
High Fluence ◽  
Layer Formation ◽  
Barrier Heights ◽  
Transient Spectroscopy ◽  
Surface Layer Formation

ABSTRACTAl/p-Si Schottky barriers formed on wafers implanted with 10–20 keV Ar exhibit low-temperature electrical properties characteristic of grain boun1dary transport Subsequent low-energy (0.4 keV), high fluence ( ∼ IOE18 cm−2) H implant is found to passivate the grain boundaries of the Ar implant-induced microcrystals. Extremely high Al/p-Si Schottky barrier heights are obtained following the dual implants, and deep level transient spectroscopy (DLTS) measurements reveal that H also alters the properties of traps introduced by the Ar implant, thus improving the diode characteristics.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 331-336
Author(s):  
Giovanni Alfieri ◽  
Lukas Kranz ◽  
Andrei Mihaila
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Scientific Community ◽  
Minority Carrier ◽  
Deep Level ◽  
Current Mode ◽  
Low Energy ◽  
The Other ◽  
Carrier Trap ◽  
Low Energy Electron ◽  
Transient Spectroscopy

SiC has currently attracted the interest of the scientific community for qubit applications. Despite the importance given to the properties of color centers in high-purity semi-insulating SiC, little is known on the electronic properties of defects in this material. In our study, we investigated the presence of electrically active levels in vanadium-doped substrates. Current mode deep level transient spectroscopy, carried out in the dark and under illumination, together with 1-D simulations showed the presence of two electrically active levels, one associated to a majority carrier trap and the other one to a minority carrier trap. The nature of the detected defects has been discussed in the light of the characterization performed on low-energy electron irradiated substrates and previous results found in the literature.

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

2013 ◽  
Vol 740-742 ◽  
pp. 373-376 ◽  
Author(s):  
Kazuki Yoshihara ◽  
Masashi Kato ◽  
Masaya Ichimura ◽  
Tomoaki Hatayama ◽  
Takeshi Ohshima
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Low Energy ◽  
Epitaxial Layers ◽  
Before And After ◽  
Low Energy Electron ◽  
Transient Spectroscopy ◽  
P Type

We have characterized deep levels in as-grown and electron irradiated p-type 4H-SiC epitaxial layers by the current deep-level transient spectroscopy (I-DLTS) method. A part of the samples were irradiated with electrons in order to introduce defects. As a result, we found that electron irradiation to p-type 4H-SiC created complex defects including carbon vacancy or interstitial. Moreover, we found that observed deep levels are different between before and after annealing, and thus annealing may change structures of defects.

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

2016 ◽  
Vol 254 (4) ◽  
pp. 1600593
Author(s):  
Eddy Simoen ◽  
Suseendran Jayachandran ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
Marc Heyns
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barriers ◽  
Spectroscopy Study ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

Deep-level transient spectroscopy of low-energy ion-irradiated silicon

2009 ◽  
Vol 105 (1) ◽  
pp. 014501 ◽  
Author(s):  
Vl. Kolkovsky ◽  
V Privitera ◽  
A. Nylandsted Larsen
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Low Energy ◽  
Transient Spectroscopy

Metal In-Diffusion during Fe and Co-Germanidation of Germanium

2007 ◽  
Vol 131-133 ◽  
pp. 47-52 ◽  
Author(s):  
Eddy Simoen ◽  
K. Opsomer ◽  
Cor Claeys ◽  
Karen Maex ◽  
Christophe Detavernier ◽  
...  
Keyword(s):  
Band Gap ◽  
Barrier Height ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reverse Current ◽  
Deep Levels ◽  
Schottky Barriers ◽  
Deep Acceptor ◽  
Transient Spectroscopy

In this paper, the deep levels occurring in Fe- or Co-germanide Schottky barriers on ntype Ge have been studied by Deep Level Transient Spectroscopy (DLTS). As is shown, no traps have been found for germanidation temperatures up to 500 oC, suggesting that in both cases no marked metal in-diffusion takes place during the Rapid Thermal Annealing (RTA) step. Deep acceptor states in the upper half of the Ge band gap and belonging to substitutional Co and Fe can be detected by DLTS only at higher RTA temperatures (TRTA). For the highest TRTA, deep levels belonging to other metal contaminants (Cu) have been observed as well. Simultaneously, the reverse current of the Schottky barriers increases with TRTA, while the barrier height is also strongly affected.

Influence of Substrate Annealing Temperature upon Deep Levels in n-Type 4H SiC

2001 ◽  
Vol 699 ◽  
Author(s):  
Martin E. Kordesch ◽  
Florentina Perjeru ◽  
R. L. Woodin
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Annealing Temperature ◽  
Deep Level ◽  
Deep Levels ◽  
Schottky Barriers ◽  
Hole Trap ◽  
Electron Traps ◽  
Transient Spectroscopy ◽  
Influence Of Substrate ◽  
Substrate Annealing

AbstractThe evolution of deep levels that depend upon annealing temperature is investigated for n-type 4H SiC-Ni Schottky barriers. Several samples, cut from the same wafer, have been left unheated or annealed at 400°C, 700°C and 900°C, in air. Deep level transient spectroscopy (DLTS) has been used to investigate deep levels in all four sets of samples. Electron traps with activation energies EC-ET = 0.19 to 0.5 eV are observed, as well as a hole trap in the sample annealed at 900°C at energy ET-EV = 0.14 eV.

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