Deep level transient spectroscopy of interfacial traps at ion‐implanted ultrahighp‐Si Schottky barriers

1986 ◽  
Vol 49 (26) ◽  
pp. 1784-1786 ◽  
Author(s):  
John H. Slowik ◽  
S. Ashok
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barriers ◽  
Transient Spectroscopy ◽  
Ion Implanted

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

2016 ◽  
Vol 254 (4) ◽  
pp. 1600593
Author(s):  
Eddy Simoen ◽  
Suseendran Jayachandran ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
Marc Heyns
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barriers ◽  
Spectroscopy Study ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

Metal In-Diffusion during Fe and Co-Germanidation of Germanium

2007 ◽  
Vol 131-133 ◽  
pp. 47-52 ◽  
Author(s):  
Eddy Simoen ◽  
K. Opsomer ◽  
Cor Claeys ◽  
Karen Maex ◽  
Christophe Detavernier ◽  
...  
Keyword(s):  
Band Gap ◽  
Barrier Height ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reverse Current ◽  
Deep Levels ◽  
Schottky Barriers ◽  
Deep Acceptor ◽  
Transient Spectroscopy

In this paper, the deep levels occurring in Fe- or Co-germanide Schottky barriers on ntype Ge have been studied by Deep Level Transient Spectroscopy (DLTS). As is shown, no traps have been found for germanidation temperatures up to 500 oC, suggesting that in both cases no marked metal in-diffusion takes place during the Rapid Thermal Annealing (RTA) step. Deep acceptor states in the upper half of the Ge band gap and belonging to substitutional Co and Fe can be detected by DLTS only at higher RTA temperatures (TRTA). For the highest TRTA, deep levels belonging to other metal contaminants (Cu) have been observed as well. Simultaneously, the reverse current of the Schottky barriers increases with TRTA, while the barrier height is also strongly affected.

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