Determination of the Threshold Energy of Noble Gas Defects in Silicon Created by Ion Beam Etching

1986 ◽  
Vol 76 ◽  
Author(s):  
W. D. Sawyer ◽  
J. Weber
Keyword(s):  
Radiation Damage ◽  
Defect Structure ◽  
Noble Gas ◽  
Ion Beam ◽  
Threshold Energy ◽  
Luminescence Spectra ◽  
Photoluminescence Spectra ◽  
Ion Beam Etching ◽  
Defect Luminescence

ABSTRACTUsing photoluminescence we investigate defects introduced into silicon by ion beam etching. The luminescence spectra show the presence of various defects known from radiation damage studies. Ion-beam milling with different noble gas ions produces a family of defects which gives rise to almost identical photoluminescence spectra. The intensity of the Ar noble gas defect luminescence is studied for different ion-beam energies (200–2000eV) and crystal orientations. The threshold energy to create this defect leads to a model of the defect structure.

scholarly journals Neutral Dissociation of Pyridine Evoked by Irradiation of Ionized Atomic and Molecular Hydrogen Beams

2021 ◽  
Vol 23 (1) ◽  
pp. 205
Author(s):  
Tomasz J. Wasowicz
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Vital Role ◽  
Experimental Science ◽  
Ion Beam Etching ◽  
Bond Forming ◽  
Line Shapes ◽  
Interstellar Media ◽  
Basic And Applied Research

The interactions of ions with molecules and the determination of their dissociation patterns are challenging endeavors of fundamental importance for theoretical and experimental science. In particular, the investigations on bond-breaking and new bond-forming processes triggered by the ionic impact may shed light on the stellar wind interaction with interstellar media, ionic beam irradiations of the living cells, ion-track nanotechnology, radiation hardness analysis of materials, and focused ion beam etching, deposition, and lithography. Due to its vital role in the natural environment, the pyridine molecule has become the subject of both basic and applied research in recent years. Therefore, dissociation of the gas phase pyridine (C5H5N) into neutral excited atomic and molecular fragments following protons (H+) and dihydrogen cations (H2+) impact has been investigated experimentally in the 5–1000 eV energy range. The collision-induced emission spectroscopy has been exploited to detect luminescence in the wavelength range from 190 to 520 nm at the different kinetic energies of both cations. High-resolution optical fragmentation spectra reveal emission bands due to the CH(A2Δ → X2Πr; B2Σ+ → X2Πr; C2Σ+ → X2Πr) and CN(B2Σ+ → X2Σ+) transitions as well as atomic H and C lines. Their spectral line shapes and qualitative band intensities are examined in detail. The analysis shows that the H2+ irradiation enhances pyridine ring fragmentation and creates various fragments more pronounced than H+ cations. The plausible collisional processes and fragmentation pathways leading to the identified products are discussed and compared with the latest results obtained in cation-induced fragmentation of pyridine.

Implantation and diffusion of noble gas atoms during ion‐beam etching of silicon

1990 ◽  
Vol 68 (12) ◽  
pp. 6179-6186 ◽  
Author(s):  
W. D. Sawyer ◽  
J. Weber ◽  
G. Nabert ◽  
J. Schmälzlin ◽  
H.‐U. Habermeier
Keyword(s):  
Noble Gas ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
And Diffusion

VIB-3 defect structure and electrical property modifications caused by reactive ion etching and ion beam etching

1983 ◽  
Vol 30 (11) ◽  
pp. 1613-1614
Author(s):  
S.J. Fonash ◽  
R. Singh ◽  
A. Climent ◽  
A. Rohatgi ◽  
P.R. Choudhury ◽  
...  
Keyword(s):  
Electrical Property ◽  
Defect Structure ◽  
Ion Beam ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Ion Beam Etching

Ion Beam Etching of Silicon: Implantation and Diffusion of Noble Gas Atoms, and Gettering of Copper

1989 ◽  
Vol 163 ◽  
Author(s):  
William D. Sawyer ◽  
Jörg Schmälzlin ◽  
Jörg Weber
Keyword(s):  
Surface Layer ◽  
Noble Gas ◽  
Ion Beam ◽  
Diffusion Annealing ◽  
Ion Beam Etching ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Silicon Implantation ◽  
And Diffusion ◽  
Low Temperature Photoluminescence

AbstractDefects introduced into silicon by ion beam etching are investigated by low-temperature photoluminescence (PL) and Rutherford backseattering (RBS) measurements. The RBS results show that during the ion beam etch a highly damaged surface layer is formed which contains a large concentration of Ar atoms. The Ar atoms then diffuse out of the surface and into the crystalline bulk by some form of radiation enhanced diffusion. Annealing of the etched samples at 350°C results in the formation of noble gas defects known from previous PL studies of ion implanted silicon. When the samples are annealed at 650βC PL lines due to new defects are formed. Although little is known about their structure, we show that the new Ar defects getter small copper contaminations very effectively.

Ion beam etching of GaAs: Influence of etching parameters on the degree of radiation damage

1997 ◽  
Vol 70 (17) ◽  
pp. 2297-2299 ◽  
Author(s):  
T. B. Borzenko ◽  
Y. I. Koval ◽  
L. V. Kulik ◽  
A. V. Larionov
Keyword(s):  
Radiation Damage ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Etching Parameters

Electron beam testing of multilevel metal integrated circuits

1991 ◽  
Vol 49 ◽  
pp. 830-831
Author(s):  
P. E. Russell ◽  
Z. J. Radzimski ◽  
D. A. Ricks ◽  
J. P. Vitarelli
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Measurement Techniques ◽  
Ion Beam Etching ◽  
Voltage Contrast ◽  
Modelling Effort ◽  
Established Technique

Fundamentally, voltage contrast is a well established technique for determination of voltages on metal surface which can be directly probed with an electron beam. However, actual integrated circuits (IC) consist of two or more conducting layers (metal and doped polysilicon) separated by dielectrics and covered by a dielectric passivation layer. Our work has addressed: i) the removal of dielectric layers (depassivation) by reactive ion etching (RIE) or selectively by focused ion beam etching to allow access to exposed metal lines; ii) modelling effort to understand how the materials and geometric parameters of multilevel IC's affect voltage contrast measurements, and iii) improvements in retarding field spectrometer based measurement techniques.

Determination of ion beam etching damage on InP by spectroscopic ellipsometry

1991 ◽  
Vol 50 (1-4) ◽  
pp. 359-363 ◽  
Author(s):  
H.W. Dinges ◽  
B. Kempf ◽  
H. Burkhard ◽  
R. Göbel
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Ion Beam ◽  
Ion Beam Etching

Ion beam etching mechanism of PMMA based resists by noble gas ions

1994 ◽  
Vol 23 (1-4) ◽  
pp. 337-340 ◽  
Author(s):  
T.B. Borzenko ◽  
Y.I. Koval ◽  
V.A. Kudryashov
Keyword(s):  
Noble Gas ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Etching Mechanism

Ultrastructural Features of Normal and Diseased Hair Revealed by Ion Beam Etching and Freeze Fracture

1975 ◽  
Vol 33 ◽  
pp. 358-359
Author(s):  
M. Spector ◽  
A. C. Brown
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ectodermal Dysplasia ◽  
Ion Beam ◽  
Freeze Fracture ◽  
Ion Current ◽  
Ion Beam Etching ◽  
Pili Torti ◽  
Argon Ion ◽  
Scanning Electron

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.

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