Ion Beam Etching of Silicon: Implantation and Diffusion of Noble Gas Atoms, and Gettering of Copper

1989 ◽  
Vol 163 ◽  
Author(s):  
William D. Sawyer ◽  
Jörg Schmälzlin ◽  
Jörg Weber
Keyword(s):  
Surface Layer ◽  
Noble Gas ◽  
Ion Beam ◽  
Diffusion Annealing ◽  
Ion Beam Etching ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Silicon Implantation ◽  
And Diffusion ◽  
Low Temperature Photoluminescence

AbstractDefects introduced into silicon by ion beam etching are investigated by low-temperature photoluminescence (PL) and Rutherford backseattering (RBS) measurements. The RBS results show that during the ion beam etch a highly damaged surface layer is formed which contains a large concentration of Ar atoms. The Ar atoms then diffuse out of the surface and into the crystalline bulk by some form of radiation enhanced diffusion. Annealing of the etched samples at 350°C results in the formation of noble gas defects known from previous PL studies of ion implanted silicon. When the samples are annealed at 650βC PL lines due to new defects are formed. Although little is known about their structure, we show that the new Ar defects getter small copper contaminations very effectively.

Implantation and diffusion of noble gas atoms during ion‐beam etching of silicon

1990 ◽  
Vol 68 (12) ◽  
pp. 6179-6186 ◽  
Author(s):  
W. D. Sawyer ◽  
J. Weber ◽  
G. Nabert ◽  
J. Schmälzlin ◽  
H.‐U. Habermeier
Keyword(s):  
Noble Gas ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
And Diffusion

Atomic Transport in Irradiated Solids

1993 ◽  
Vol 311 ◽  
Author(s):  
R.R. Averback ◽  
Mai Ghaly ◽  
Y.Y. Lee ◽  
H. Zhu
Keyword(s):  
Ion Beam ◽  
Rapid Quenching ◽  
Primary Role ◽  
Melting Points ◽  
Crystalline Materials ◽  
Enhanced Diffusion ◽  
Atomic Transport ◽  
Radiation Enhanced Diffusion ◽  
Radiation Induced ◽  
Kinetics Of

ABSTRACTAtomic transport in irradiated solids has been investigated in both the prompt and delayed regimes. Prompt effects are revealed on an atomic level through molecular dynamics computer simulations. It is demonstrated that for metals like gold, which have high atomic numbers and low melting points, thermal spikes play a primary role in the cascade dynamics and that concepts like melting and rapid quenching are useful descriptions. Surface effects in these metals are also discussed. For metals with higher melting points and lower atomic numbers, the cascade dynamics are determined almost exclusively by energetic collisions far above thermal energies. This is illustrated by simulations of cascades in NiAl. The effect of the high ordering energy in this intermetallic compound on the radiation-induced defect structure has also been studied.Atomic transport in the delayed regime is illustrated by two examples: an order-disorder alloy, Cu3Au, and an amorphous alloy, NiZr. The first example is used to illustrate various aspects of radiation enhanced diffusion (RED): ion beam mixing, diffusion kinetics, the effects of primary recoil spectrum, and the importance of chemical order. The second example illustrates that the basic theory of RED, which was developed to describe crystalline materials, appears to work adequately for amorphous metal alloys, suggesting that similar mechanisms may be operating. It is shown, however, that the kinetics of RED observed in amorphous alloys are not unique to point defect models.

scholarly journals Analysis of Experiments in Helium Microbeam Mixing

1991 ◽  
Vol 235 ◽  
Author(s):  
John B. Davis ◽  
R. E. Benenson ◽  
David Peak
Keyword(s):  
Dose Rate ◽  
Ion Beam ◽  
Liquid Nitrogen Temperature ◽  
Enhanced Diffusion ◽  
Interface Width ◽  
Interface Growth ◽  
Radiation Enhanced Diffusion ◽  
Order Of Magnitude ◽  
Constant Dose ◽  
Diffusion Of Vacancies

ABSTRACTWe have continued to investigate ion-beam mixing in bilay-er targets irradiated by 2-MeV He+ microbeams at room temperature. Although we have previously reported a linear dependence of interface width on dose for Cu/Al targets 1, more extensive results have not supported this conclusion, within statistical uncertainty, it appears that the interface width in Cu/Al (1) is proportional to the square root of dose, at constant dose rate, (2) is larger in Al than in Cu, for the same dose, (3) is proportional to the 1/4 power of dose rate, and (4) is absent at liquid nitrogen temperature. Calculations of the expected interface growth rate from a radiation-enhanced diffusion model have provided order-of-magnitude agreement with observed rates. Additionally, intermixing of Cu and Al outside the damaged area may indicate significant transverse diffusion of vacancies.

Ar+ Induced Interfacial Mixinc in the Pd/Cu Bilayer System

1989 ◽  
Vol 157 ◽  
Author(s):  
H.K. Kim ◽  
J.H. Song ◽  
S.K. Kim ◽  
K. Jeong ◽  
C.N. Whang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Layer By Layer ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Bilayer System ◽  
Radiation Enhanced Diffusion

ABSTRACTIon beam mixing of a Pd/Cu bilayer is studied using irradiation with 80 keV Ar+ ions at room temperature. RBS analysis shows that intermixing has occurred across the Pd/Cu interface, and that the mixing amount increases with increasing ion dose, which agrees well with a model for radiation enhanced diffusion. It is found that the Cu3Pd phase grows in a layer-by-layer manner.

Determination of the Threshold Energy of Noble Gas Defects in Silicon Created by Ion Beam Etching

1986 ◽  
Vol 76 ◽  
Author(s):  
W. D. Sawyer ◽  
J. Weber
Keyword(s):  
Radiation Damage ◽  
Defect Structure ◽  
Noble Gas ◽  
Ion Beam ◽  
Threshold Energy ◽  
Luminescence Spectra ◽  
Photoluminescence Spectra ◽  
Ion Beam Etching ◽  
Defect Luminescence

ABSTRACTUsing photoluminescence we investigate defects introduced into silicon by ion beam etching. The luminescence spectra show the presence of various defects known from radiation damage studies. Ion-beam milling with different noble gas ions produces a family of defects which gives rise to almost identical photoluminescence spectra. The intensity of the Ar noble gas defect luminescence is studied for different ion-beam energies (200–2000eV) and crystal orientations. The threshold energy to create this defect leads to a model of the defect structure.

Diffusion Induced Grain Boundary Migration in Ion-Beam Mixed Fe-AL

1982 ◽  
Vol 40 ◽  
pp. 634-635 ◽  
Author(s):  
Shankara K. Prasad ◽  
Herbert Herman ◽  
Alexander H. King ◽  
Allen Goland
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Boundary Migration ◽  
Ion Beam ◽  
Bulk Diffusion ◽  
Grain Boundary Migration ◽  
Recoil Implantation ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Mixed Layers

Ion beam intermixing is a newly investigated process wherein an ion beam is used to induce a reaction between a deposited thin layer and the substrate. The ion beam induced intermixing and microalloying at the interface can be due to three processes: 1. Recoil implantation 2. Cascade mixing 3. Radiation enhanced diffusion. Mixing due to recoil implantation has been studied by Nelson and was shown to result in very shallow mixed layers. However, in their recent investigation of Pt-Si, Pd-Si and Al-Ge and other systems, Tsaur et.al, have observed the formation of a thick surface alloy which is metastable in nature. They attribute this intermixing of the deposited thin film and the substrate, and the eventual "epitaxial" growth, to cascade overlap and radiation enhanced bulk diffusion. The present work provides evidence for the role played by grain boundaries in both intermixing and grain growth.

Effect of radiation exposure on the structure and diffusion in the near-surface layer of ultrafine-grained nickel

2021 ◽  
pp. 88-93
Author(s):  
G.P. Grabovetskaya ◽  
◽  
I.P. Mishin ◽  
E.N. Stepanova ◽  
A.D. Teresov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Diffusion Annealing ◽  
Nickel Surface ◽  
Near Surface ◽  
Pulsed Electron Beam ◽  
Ultrafine Grained ◽  
Isothermal Diffusion ◽  
And Diffusion

The effect of irradiation with a pulsed electron beam (PEB) in the mode of surface melting absence on the copper diffusion in the near-surface layer of ultrafine-grained (UFG) nickel has been studied. The profiles of the copper concentration distribution over depth after isothermal diffusion annealing and annealing under PEB irradiation of the UFG nickel surface are determined. It has been established that as a result of PEB irradiation, the coefficient of grain-boundary diffusion of copper in nickel increases and the mode of grain-boundary heterodiffusion changes in the near-surface layer of nickel in comparison with isothermal diffusion annealing.

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