Implantation and diffusion of noble gas atoms during ion‐beam etching of silicon

1990 ◽  
Vol 68 (12) ◽  
pp. 6179-6186 ◽  
Author(s):  
W. D. Sawyer ◽  
J. Weber ◽  
G. Nabert ◽  
J. Schmälzlin ◽  
H.‐U. Habermeier
Keyword(s):  
Noble Gas ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
And Diffusion

Ion Beam Etching of Silicon: Implantation and Diffusion of Noble Gas Atoms, and Gettering of Copper

1989 ◽  
Vol 163 ◽  
Author(s):  
William D. Sawyer ◽  
Jörg Schmälzlin ◽  
Jörg Weber
Keyword(s):  
Surface Layer ◽  
Noble Gas ◽  
Ion Beam ◽  
Diffusion Annealing ◽  
Ion Beam Etching ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Silicon Implantation ◽  
And Diffusion ◽  
Low Temperature Photoluminescence

AbstractDefects introduced into silicon by ion beam etching are investigated by low-temperature photoluminescence (PL) and Rutherford backseattering (RBS) measurements. The RBS results show that during the ion beam etch a highly damaged surface layer is formed which contains a large concentration of Ar atoms. The Ar atoms then diffuse out of the surface and into the crystalline bulk by some form of radiation enhanced diffusion. Annealing of the etched samples at 350°C results in the formation of noble gas defects known from previous PL studies of ion implanted silicon. When the samples are annealed at 650βC PL lines due to new defects are formed. Although little is known about their structure, we show that the new Ar defects getter small copper contaminations very effectively.

Determination of the Threshold Energy of Noble Gas Defects in Silicon Created by Ion Beam Etching

1986 ◽  
Vol 76 ◽  
Author(s):  
W. D. Sawyer ◽  
J. Weber
Keyword(s):  
Radiation Damage ◽  
Defect Structure ◽  
Noble Gas ◽  
Ion Beam ◽  
Threshold Energy ◽  
Luminescence Spectra ◽  
Photoluminescence Spectra ◽  
Ion Beam Etching ◽  
Defect Luminescence

ABSTRACTUsing photoluminescence we investigate defects introduced into silicon by ion beam etching. The luminescence spectra show the presence of various defects known from radiation damage studies. Ion-beam milling with different noble gas ions produces a family of defects which gives rise to almost identical photoluminescence spectra. The intensity of the Ar noble gas defect luminescence is studied for different ion-beam energies (200–2000eV) and crystal orientations. The threshold energy to create this defect leads to a model of the defect structure.

Ion beam etching mechanism of PMMA based resists by noble gas ions

1994 ◽  
Vol 23 (1-4) ◽  
pp. 337-340 ◽  
Author(s):  
T.B. Borzenko ◽  
Y.I. Koval ◽  
V.A. Kudryashov
Keyword(s):  
Noble Gas ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Etching Mechanism

Ultrastructural Features of Normal and Diseased Hair Revealed by Ion Beam Etching and Freeze Fracture

1975 ◽  
Vol 33 ◽  
pp. 358-359
Author(s):  
M. Spector ◽  
A. C. Brown
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ectodermal Dysplasia ◽  
Ion Beam ◽  
Freeze Fracture ◽  
Ion Current ◽  
Ion Beam Etching ◽  
Pili Torti ◽  
Argon Ion ◽  
Scanning Electron

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

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