Chemically Assisted Ion Beam Etching of Tungsten using ClF3

1986 ◽  
Vol 75 ◽  
Author(s):  
Charles Garner
Keyword(s):  
Ion Beam ◽  
Electron Bombardment ◽  
Ion Source ◽  
Preferred Orientation ◽  
Ion Beam Etching ◽  
Polycrystalline Tungsten ◽  
Etch Rates ◽  
High Degree

A chemically assisted ion beam etching (CAIBE) technique is described which employs an ion beam from an electron bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 μm thick with good anisotropy and pattern definition over areas 5 mm2, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred orientation etching, while polycrystalline tungsten films exhibit high etch rates approximately 80% that of (100) orientation tungsten.

Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source

1982 ◽  
Vol 21 (Part 2, No. 1) ◽  
pp. L4-L6 ◽  
Author(s):  
Seitaro Matsuo ◽  
Yoshio Adachi
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Ecr Ion Source ◽  
Ion Beam Etching ◽  
Broad Beam ◽  
Reactive Ion Beam Etching

Nano-Structured TiN Thin Films Deposited by Single Ion Beam Reactive Sputtering

2007 ◽  
Vol 555 ◽  
pp. 303-308
Author(s):  
Ž. Bogdanov ◽  
N. Popović ◽  
M. Zlatanović ◽  
B. Goncić ◽  
Z. Rakočević ◽  
...  
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Ion Beam ◽  
Ion Source ◽  
Preferred Orientation ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Substrate Current ◽  
Tin Thin Films ◽  
Negative Substrate Bias

The reactive sputter deposition of TiN thin films onto glass substrate at the ambient temperature using a homemade broad beam argon ion source was investigated in order to deposit the films with nanostructural characteristics. While constant Ar beam energy of 2 keV was used, the N2 partial pressure and the substrate current, adjusted by different accelerator grid potentials (Vacc) were varied. A negative substrate bias voltage (100 V) was additionally applied. The TiN film structure was investigated by XRD and STM methods. All deposited films exhibited (220) preferred orientation, and the change in normalized peak intensity (I220/d), lattice spacing (d220) and full-with at half-maximum (FWHM) were investigated. As a result of higher energy bombardment with 100 V negative substrate bias, compared to the substrate current change with Vacc, nearly constant (220) peak broadening with the increase of N2 partial pressure was obtained. The measured grain diameter (STM and XRD) confirms that the grain size is less than 12 nm, and the (220) preferred orientation was disturbed but not destructed.

Ion Beam Etching of Biological Material in the Scanning Electron Microscope

1969 ◽  
Vol 27 ◽  
pp. 10-11
Author(s):  
Patrick Echlin ◽  
David Kynaston ◽  
Paul M. Knights
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Biological Material ◽  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Etching ◽  
Dynamic Experiments ◽  
First Time ◽  
Scanning Electron

An ion source has been designed to operate in the chamber of the Stereoscan scanning electron microscope and provides facilities for etching specimens in situ. The source is a demountable cold cathode discharge type requiring only simple control.The ion beam described above has been used to progressively etch away hard or resilient biological material. This is the first time that ion beam etching of botanical specimens has been followed inside the scanning microscope, and marks the beginning of a range of dynamic experiments using this form of instrumentation.

Ultrahigh vacuum chemically assisted ion beam etching system with a three grid ion source

1997 ◽  
Vol 15 (3) ◽  
pp. 616-621 ◽  
Author(s):  
John V. Hryniewicz ◽  
Y. J. Chen ◽  
Shih Hsiang Hsu ◽  
Chau-Han D. Lee ◽  
Gyorgy A. Porkolab
Keyword(s):  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Ion Source ◽  
Ion Beam Etching ◽  
Etching System

Ion Beam Etching System for Mercury Cadmium Telluride and III-V Compound Semiconductors

1991 ◽  
Vol 236 ◽  
Author(s):  
Geoffrey K. Reeves ◽  
Patrick. W. Leech ◽  
Patrick Bond
Keyword(s):  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Ion Beam ◽  
Compound Semiconductors ◽  
Ion Source ◽  
Rotating Platform ◽  
Ion Beam Etching ◽  
Wide Range ◽  
Wet Chemical ◽  
Etching System

AbstractThis paper describes a laboratory built ion beam etching system and its performance when used for etching Hg1-xCdxTe, GaAs and InP. The etching system provides a means for forming device mesas on a wide range of semiconductors without having to resort to wet chemical etches. The system uses a Kaufmann ion source, a rotating platform and two flow controllers to allow the variation of gas ratios and flows.

A 16 cm broad‐beam ion source for ion‐beam etching of quartz wafers

1996 ◽  
Vol 67 (3) ◽  
pp. 1009-1011
Author(s):  
Yusheng Rao ◽  
Ming Li ◽  
Bo Qi ◽  
Fei Li
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Etching ◽  
Broad Beam

Hollow Cold Cathode Ion Source for Reactive Ion-Beam Etching

1989 ◽  
Vol 158 ◽  
Author(s):  
A.I. Stognij ◽  
V.V. Tokarev
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Ion Source ◽  
Operating Parameters ◽  
Cold Cathode ◽  
Plasma Emitter ◽  
Ion Beam Etching ◽  
Pressure Discharge ◽  
Reactive Gas ◽  
Cold Cathode Ion Source

ABSTRACTA wide-aperture reactive gas ion source has been developed for various ion-beam processings in high vacuum (p < < 5×10−2 Pa). The peculiar feature of the ion source is that two-stage self-maintained low-pressure discharge is used here as a plasma emitter. This provides high operating parameters of the source along with simple diode-type structure.

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