Mesotaxy: Formation of Buried Single-Crystal CoSi2 Layers by Implantation

1986 ◽  
Vol 74 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
R. C. Dynes ◽  
J. P. Garno ◽  
J. M. Gibson
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Electrical Characterization ◽  
Rutherford Backscattering ◽  
High Dose ◽  
High Temperature Annealing ◽  
Buried Layers ◽  
High Dose Implantation ◽  
Better Than

AbstractUsing high dose implantation of 200 keV Co ions followed by high temperature annealing, we have created buried layers of CoSi2 in crystalline Si of both (100) and (111) orientations. For a dose of 3 × 1017 Co/cm2, the layer that forms is ∼1100Å thick and the overlying Si is ∼600Å thick. A lower dose of 2 × 1017 Co/cm2 yields a thinner layer, 700Å thick, under 1200Å of crystalline Si. Rutherford Backscattering and channeling analysis of the layers shows that they are aligned with the substrate (χmin of the Co as low as 6.4%.) and TEM inspection of the (100) CoSi2/Si interfaces shows that they are abrupt and epitaxial (with occasional small facets). Moreover, electrical characterization of these layers yields resistance ratios that are better than epitaxial CoSi2 films grown by more conventional UHV methods.

Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport

2013 ◽  
Vol 740-742 ◽  
pp. 911-914 ◽  
Author(s):  
Nicolas Thierry-Jebali ◽  
Mihai Lazar ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Véronique Soulière ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characterization ◽  
High Temperature Annealing ◽  
High Quality ◽  
Pin Diodes ◽  
First Time

This paper deals with electrical characterization of PiN diodes fabricated on an 8° off-axis 4H-SiC with a p++localized epitaxial area grown by Vapour-Liquid-Solid (VLS) transport. It provides for the first time evidence that a high quality p-n junction can be achieved by using this technique followed by a High Temperature Annealing (HTA) process.

Lateral Confinement of Silicide Layers Synthesized with High Dose Implantation and Annealing

1989 ◽  
Vol 147 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
S. D. Berger ◽  
H. A. Huggins ◽  
D. Loretto
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
Electron Beam Lithography ◽  
High Dose ◽  
Induced Current ◽  
High Temperature Annealing ◽  
Tem Analysis ◽  
Resolution Electron ◽  
Electron Beam Induced Current ◽  
High Dose Implantation

AbstractUsing mesotaxy, a technique which involves high dose implantation followed by high temperature annealing, we have created narrow wires of CoSi2 buried beneath the surface of a silicon wafer. The implantation masks are fabricated directly on the silicon substrate using high resolution electron beam lithography in combination with reactive ion etching. TEM analysis shows that the wires are single-crystal and oriented with the substrate with very abrupt interfaces. The electrical continuity of the wires has been confirmed with electron-beam-induced current measurements.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

scholarly journals Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond

2012 ◽  
Vol 14 (5) ◽  
pp. 053011 ◽  
Author(s):  
F Picollo ◽  
D Gatto Monticone ◽  
P Olivero ◽  
B A Fairchild ◽  
S Rubanov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Three Dimensional ◽  
Electrical Characterization ◽  
Single Crystal Diamond

An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC

2017 ◽  
Vol 897 ◽  
pp. 411-414 ◽  
Author(s):  
Craig A. Fisher ◽  
Romain Esteve ◽  
Stefan Doering ◽  
Michael Roesner ◽  
Martin de Biasio ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
High Dose ◽  
Stress Determination ◽  
Analysis Techniques ◽  
Physical Study ◽  
Crystal Damage ◽  
Activation Annealing ◽  
Anneal Temperature ◽  
High Dose Implantation

In this paper, an investigation into the crystal structure of Al-and N-implanted 4H-SiC is presented, encompassing a range of physical and electrical analysis techniques, with the aim of better understanding the material properties after high-dose implantation and activation annealing. Scanning spreading resistance microscopy showed that the use of high temperature implantation yields more uniform resistivity profiles in the implanted layer; this correlates with KOH defect decoration and TEM observations, which show that the crystal damage is much more severe in room temperature implanted samples, regardless of anneal temperature. Finally, stress determination by means of μRaman spectroscopy showed that the high temperature implantation results in lower tensile stress in the implanted layers with respect to the room temperature implantation samples.

Formation of Buried Sio2 By High Dose Implantation of Oxygen at Room and Liquid Nitroeen Temperatures

1985 ◽  
Vol 53 ◽  
Author(s):  
F. Namavar ◽  
J. I. Budnick ◽  
F. H. Sanchez ◽  
H. C. Hayden
Keyword(s):  
Liquid Nitrogen ◽  
Current Density ◽  
Room Temperature ◽  
Rutherford Backscattering ◽  
High Dose ◽  
Crystalline Quartz ◽  
Oxygen Ions ◽  
High Dose Implantation ◽  
A Current

ABSTRACTWe have carried out a study to understand the mechanisms involved in the formation of buried SIO2 by high dose implantation of oxygen into Si targets. Oxygen ions were implanted at 150 keV with doses up to 2.5 X 1018 ions/cm2 and a current density of less than 10 μA/cm2 into Si 〈100〉 at room and liquid nitrogen temperatures. In-situ Rutherford backscattering (RBS) analysis clearly indicates the formation of uniform buried SIO2 for both room and liquid nitrogen temperatures for doses above 1.5 X 1018/cm2.Oxygen ions were implanted at room temperature into crystalline quartz to doses of about 1018 ions cm2 at 150 keV, with a current density of 〈10〉10 μA/cm2. The RBS spectra of the oxygen implanted quartz cannot be distinguished from those of unimplanted ones. Furthermore, Si ions were implanted into crystalline quartz at 80 keV and dose of 1 X 1017 Si/cm2, and a current aensity of about 1 μA/cm2. However, no signal from Si in excess of the SiO2 ratio could be observed. Our results obtained by RBS show that implantation of either Si+ or O into SiO2 under conditions stated above does not create a layer whose Si:O ratio differs measurably from that of SiO2.

Optical and Electrical Properties of Cd Te Laser-Synthetized

1982 ◽  
Vol 13 ◽  
Author(s):  
L. Baufay ◽  
A. Pigeolet ◽  
R. Andrew ◽  
L.D. Laude
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Electrical Characterization ◽  
Point Of View ◽  
Optical And Electrical Properties ◽  
Impurity States ◽  
Absorption Measurements ◽  
Forbidden Gap

ABSTRACTOptical and electrical characterization of CdTe synthetized by laser irradiationofamultilayer film of alternately Cd and Te is achieved. Optical absorption measurements evidence the good quality of these films and show that they have behaviour comparable to the single crystal. The influence of the irradiation conditions on the electrical properties of such CdTe films is discussed; they are compared to single crystal from the point of view of resistivity. It is shown that it is possible to prepare by this means samples devoid of impurity states in the middle of the forbidden gap. Finally, the ohmicity of Au, Al, Cr, ITO and non irradiated Cd/Te sandwich contacts is tested.

High temperature high-dose implantation of aluminum in 4H-SiC

2004 ◽  
Vol 84 (25) ◽  
pp. 5195-5197 ◽  
Author(s):  
N. S. Saks ◽  
A. V. Suvorov ◽  
D. C. Capell
Keyword(s):  
High Temperature ◽  
High Dose ◽  
High Dose Implantation
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