High temperature high-dose implantation of aluminum in 4H-SiC

2004 ◽  
Vol 84 (25) ◽  
pp. 5195-5197 ◽  
Author(s):  
N. S. Saks ◽  
A. V. Suvorov ◽  
D. C. Capell
Keyword(s):  
High Temperature ◽  
High Dose ◽  
High Dose Implantation

An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC

2017 ◽  
Vol 897 ◽  
pp. 411-414 ◽  
Author(s):  
Craig A. Fisher ◽  
Romain Esteve ◽  
Stefan Doering ◽  
Michael Roesner ◽  
Martin de Biasio ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
High Dose ◽  
Stress Determination ◽  
Analysis Techniques ◽  
Physical Study ◽  
Crystal Damage ◽  
Activation Annealing ◽  
Anneal Temperature ◽  
High Dose Implantation

In this paper, an investigation into the crystal structure of Al-and N-implanted 4H-SiC is presented, encompassing a range of physical and electrical analysis techniques, with the aim of better understanding the material properties after high-dose implantation and activation annealing. Scanning spreading resistance microscopy showed that the use of high temperature implantation yields more uniform resistivity profiles in the implanted layer; this correlates with KOH defect decoration and TEM observations, which show that the crystal damage is much more severe in room temperature implanted samples, regardless of anneal temperature. Finally, stress determination by means of μRaman spectroscopy showed that the high temperature implantation results in lower tensile stress in the implanted layers with respect to the room temperature implantation samples.

scholarly journals Raman Spectroscopy of C-Irradiated Graphite

1992 ◽  
Vol 279 ◽  
Author(s):  
D. M. Hembree ◽  
D. F. Pedraza ◽  
G. R. Romanoski ◽  
S. P. Withrow ◽  
B. K. Annis
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Pyrolytic Graphite ◽  
High Dose ◽  
Surface Cracks ◽  
Damage State ◽  
Damage Level ◽  
Atomic Force ◽  
Irradiated Graphite ◽  
High Dose Implantation

ABSTRACTHighly oriented pyrolytic graphite samples were irradiated with C+ ions at 35 keV in a direction normal to the basal plane and subsequently annealed up to 1373 K. Substantial surface topography changes were observed at fluences of 5×1018 ions/m2 and higher using scanning electron and atomic force microscopies. Intricate networks of surface cracks and ridges developed after high dose implantation. A systematic study of the irradiation effects was conducted using Raman spectroscopy. Microstructural changes in irradiated regions were first detected at a dose of 1×1017 ions/m2 through the appearance of the Raman D-line at ∼1360 cm−1. The intensity of this line increases while that of the Raman G-line at 1580 cm−1 decreases as the irradiation dose is increased or the irradiation temperature is decreased. After irradiation at 280K to a fluence of 5×1019 ions/m2 or higher the first order spectrum exhibits one single line at a wavelength intermediate between the D- and G-lines. Damage recovery upon thermal annealing depends not only on the initial damage state but also on the annealing temperature sequence. Samples irradiated to a damage level where two distinct Raman peaks are no longer resolvable exhibited upon direct annealing at a high temperature two distinct Raman lines. By contrast, pre-annealing these highly irradiated specimens at lower temperatures produced less pronounced changes in the Raman spectra. Pre-annealing appears to stabilize damage structures that are more resistant to high-temperature annealing than those induced by irradiation.

Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature

1993 ◽  
Vol 32 (Part 2, No. 9A) ◽  
pp. L1286-L1288 ◽  
Author(s):  
Akiyoshi Chayahara ◽  
Masato Kiuchi ◽  
Atsushi Kinomura ◽  
Yoshiaki Mokuno ◽  
Yuji Horino ◽  
...  
Keyword(s):  
High Temperature ◽  
High Dose ◽  
Carbon Ions ◽  
Buried Layer ◽  
High Dose Implantation

Mesotaxy: Formation of Buried Single-Crystal CoSi2 Layers by Implantation

1986 ◽  
Vol 74 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
R. C. Dynes ◽  
J. P. Garno ◽  
J. M. Gibson
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Electrical Characterization ◽  
Rutherford Backscattering ◽  
High Dose ◽  
High Temperature Annealing ◽  
Buried Layers ◽  
High Dose Implantation ◽  
Better Than

AbstractUsing high dose implantation of 200 keV Co ions followed by high temperature annealing, we have created buried layers of CoSi2 in crystalline Si of both (100) and (111) orientations. For a dose of 3 × 1017 Co/cm2, the layer that forms is ∼1100Å thick and the overlying Si is ∼600Å thick. A lower dose of 2 × 1017 Co/cm2 yields a thinner layer, 700Å thick, under 1200Å of crystalline Si. Rutherford Backscattering and channeling analysis of the layers shows that they are aligned with the substrate (χmin of the Co as low as 6.4%.) and TEM inspection of the (100) CoSi2/Si interfaces shows that they are abrupt and epitaxial (with occasional small facets). Moreover, electrical characterization of these layers yields resistance ratios that are better than epitaxial CoSi2 films grown by more conventional UHV methods.

High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

1997 ◽  
Vol 23 (8) ◽  
pp. 617-620 ◽  
Author(s):  
R. A. Yankov ◽  
M. Voelskow ◽  
W. Kreissig ◽  
D. V. Kulikov ◽  
J. Pezoldt ◽  
...  
Keyword(s):  
High Temperature ◽  
High Dose ◽  
High Dose Implantation

Lateral Confinement of Silicide Layers Synthesized with High Dose Implantation and Annealing

1989 ◽  
Vol 147 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
S. D. Berger ◽  
H. A. Huggins ◽  
D. Loretto
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
Electron Beam Lithography ◽  
High Dose ◽  
Induced Current ◽  
High Temperature Annealing ◽  
Tem Analysis ◽  
Resolution Electron ◽  
Electron Beam Induced Current ◽  
High Dose Implantation

AbstractUsing mesotaxy, a technique which involves high dose implantation followed by high temperature annealing, we have created narrow wires of CoSi2 buried beneath the surface of a silicon wafer. The implantation masks are fabricated directly on the silicon substrate using high resolution electron beam lithography in combination with reactive ion etching. TEM analysis shows that the wires are single-crystal and oriented with the substrate with very abrupt interfaces. The electrical continuity of the wires has been confirmed with electron-beam-induced current measurements.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

Pulsed Electron Beam Annealing of GaAs after High Dose Implantation of Hydrogen

1997 ◽  
Vol 248-249 ◽  
pp. 253-256 ◽  
Author(s):  
T. Hauser ◽  
L. Bredell ◽  
H. Gaigher ◽  
H. Alberts ◽  
A. Botha ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Dose ◽  
Pulsed Electron Beam ◽  
High Dose Implantation

Silicon on Insulator by High Dose Implantation

1984 ◽  
Vol 33 ◽  
Author(s):  
P. L. F. Hemment
Keyword(s):  
Physical Properties ◽  
Thermal Processing ◽  
Vlsi Circuits ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Current ◽  
Processing Technologies ◽  
Oxygen Ions ◽  
High Doses ◽  
High Dose Implantation

ABSTRACTSilicon on insulator structures consisting of a buried dielectric, formed by the implantation of high doses of oxygen ions, have been shown to be suitable substrates for LSI circuits. The substrates are compatible with present silicon processing technologies and are confidently expected to be suitable for VLSI circuits. In this paper the microstructure and physical properties of this SOI material will be described and the dependence of these characteristics upon the implantation conditions and subsequent thermal processing will be discussed. With this information, it is then possible to outline the specification for a high current oxygen implanter.

High Dose Implantation of Au and Cu into Si Studied by Auger Electron and Backscattering Spectroscopies

1977 ◽  
pp. 57-64
Author(s):  
A. Hiraki ◽  
M. Iwami ◽  
K. Shuto ◽  
T. Saegusa ◽  
T. Narusawa ◽  
...  
Keyword(s):  
Auger Electron ◽  
High Dose ◽  
High Dose Implantation
Sign in / Sign up

Export Citation Format

Share Document