Lateral Confinement of Silicide Layers Synthesized with High Dose Implantation and Annealing

1989 ◽  
Vol 147 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
S. D. Berger ◽  
H. A. Huggins ◽  
D. Loretto
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
Electron Beam Lithography ◽  
High Dose ◽  
Induced Current ◽  
High Temperature Annealing ◽  
Tem Analysis ◽  
Resolution Electron ◽  
Electron Beam Induced Current ◽  
High Dose Implantation

AbstractUsing mesotaxy, a technique which involves high dose implantation followed by high temperature annealing, we have created narrow wires of CoSi2 buried beneath the surface of a silicon wafer. The implantation masks are fabricated directly on the silicon substrate using high resolution electron beam lithography in combination with reactive ion etching. TEM analysis shows that the wires are single-crystal and oriented with the substrate with very abrupt interfaces. The electrical continuity of the wires has been confirmed with electron-beam-induced current measurements.

Studies of CoSi2 nano-structures produced by high-dose ion implantation in Si

1989 ◽  
Vol 47 ◽  
pp. 454-455
Author(s):  
S.D. Berger ◽  
D. Loretto ◽  
H.A. Huggins ◽  
Alice E. White ◽  
K.T. Short ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
Electron Beam Lithography ◽  
Growth Process ◽  
High Dose ◽  
Nano Structures ◽  
High Temperature Anneal ◽  
Discrete Structures ◽  
Buried Layers ◽  
High Doses

Recently it has been shown that buried layers of single crystal, orientated CoSi2 Can be produced in silicon by implanting high doses of Co followed by a high temperature anneal. This process is known as mesotaxy. The original implant produces a skewed Gaussian distribution of ions. However, on annealing it is found that the distribution sharpens dramatically to give layers which nave flat and abrupt interfaces and are of very good structural and electrical quality.Using a combination of electron beam lithography and reactive ion etching we have fabricated masks which confine the implant dose laterally. In this way we are able to produce discrete structures of CoSi2 with nanometer dimensions. Furthermore, we can now investigate the epitaxial growth process which occurs during the anneal by varying the structure's dimensions, shape and crystallographic orientation with respect to the substrate.

Mesotaxy: Formation of Buried Single-Crystal CoSi2 Layers by Implantation

1986 ◽  
Vol 74 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
R. C. Dynes ◽  
J. P. Garno ◽  
J. M. Gibson
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Electrical Characterization ◽  
Rutherford Backscattering ◽  
High Dose ◽  
High Temperature Annealing ◽  
Buried Layers ◽  
High Dose Implantation ◽  
Better Than

AbstractUsing high dose implantation of 200 keV Co ions followed by high temperature annealing, we have created buried layers of CoSi2 in crystalline Si of both (100) and (111) orientations. For a dose of 3 × 1017 Co/cm2, the layer that forms is ∼1100Å thick and the overlying Si is ∼600Å thick. A lower dose of 2 × 1017 Co/cm2 yields a thinner layer, 700Å thick, under 1200Å of crystalline Si. Rutherford Backscattering and channeling analysis of the layers shows that they are aligned with the substrate (χmin of the Co as low as 6.4%.) and TEM inspection of the (100) CoSi2/Si interfaces shows that they are abrupt and epitaxial (with occasional small facets). Moreover, electrical characterization of these layers yields resistance ratios that are better than epitaxial CoSi2 films grown by more conventional UHV methods.

High-resolution electron-beam-induced-current study of the defect structure in GaN epilayers

2002 ◽  
Vol 14 (48) ◽  
pp. 13285-13290 ◽  
Author(s):  
N M Shmidt ◽  
O A Soltanovich ◽  
A S Usikov ◽  
E B Yakimov ◽  
E E Zavarin
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Defect Structure ◽  
Induced Current ◽  
Resolution Electron ◽  
Electron Beam Induced Current

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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