Indentation Load Relaxation Studies of Thin Film-Substrate Systems

1986 ◽  
Vol 72 ◽  
Author(s):  
D. Stone ◽  
W. Lafontaine ◽  
S. Ruoff ◽  
S.-P. Hannula ◽  
B. Yost ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminum Film ◽  
Indentation Load ◽  
Load Relaxation ◽  
Tin Film ◽  
Relaxation Studies ◽  
Film Substrate

AbstractResults from indentation load relaxation (ILR) tests on thin film-substrate systems are reported. In the case of a 1 pum aluminum film on silicon, the data can be interpreted as reflecting both the properties of the film and the interface between film and substrate. Data from a 37μm TiN film on 304 SS are believed to reflect the combined behavior of the film and substrate.

Indentation Load Relaxation Experiments on Al-Si Metallizations

1990 ◽  
Vol 188 ◽  
Author(s):  
W. R. LaFontaine ◽  
B. Yost ◽  
R. D. Black ◽  
Che-Yu Li
Keyword(s):  
Flow Behavior ◽  
Indentation Load ◽  
Load Relaxation ◽  
Depth Of Penetration ◽  
Flow Curves ◽  
Bulk Specimen ◽  
Load Relaxation Test ◽  
Relaxation Experiments ◽  
Film Substrate ◽  
Penetration Depths

ABSTRACTIndentation load relaxation (ILR) experiments with indentation depths in the submicron range are described. The observed flow behavior of a 1μm thick A1-2%Si film deposited on a silicon substrate depended on the depth of penetration. For shallow penetration depths, the shape of the flow curves obtained from this sample are similar to those obtained from a conventional load relaxation test of a bulk specimen. For penetration depths close to the film/substrate interface, the influence of the substrate on the film's deformation behavior was observed.

Determination of Time-Dependent Plastic Properties of Metals by Indentation Load Relaxation Techniques

1984 ◽  
Vol 40 ◽  
Author(s):  
Simo-Pekka Hannula ◽  
Donald Stone ◽  
Che-Yu Li
Keyword(s):  
Thin Film ◽  
Indentation Test ◽  
Indentation Load ◽  
Time Dependent ◽  
Relaxation Techniques ◽  
Load Relaxation ◽  
Surface Layers ◽  
Plastic Properties ◽  
Load Relaxation Test

AbstractLoad relaxation testing has been demonstrated to be useful for characterizing the time dependent plastic properties of metals. However, for testing of small material volumes, such as thin film metallizations, thin films, and contact surfaces, conventional load relaxation techniques cannot be used. For such applications an indentation test offers an attractive means for obtaining data necessary for materials characterization. This work shows that an indentation load relaxation test is experimentally feasible for thin film testing. Experiments on brass and beryllium copper samples with or without a gold/nickel plating illustrate different relaxation properties of the substrates and the surface layers. Furthermore, results of experiments on some fcc metals suggest rather simple relations between the conventional uniaxial load relaxation (LR) test and the indentation load relaxation (ILR) test.

Microtomy of spherical Al2O3 powders

1983 ◽  
Vol 41 ◽  
pp. 74-75
Author(s):  
E.J. Jenkins ◽  
D.S. Tucker ◽  
J.J. Hren
Keyword(s):  
Thin Film ◽  
Size Range ◽  
Particle Aggregation ◽  
Ion Milling ◽  
Thin Sections ◽  
Α Phase ◽  
Convenient Means ◽  
Van Der Waals Attraction ◽  
Negative Feature ◽  
Film Substrate

The size range of mineral and ceramic particles of one to a few microns is awkward to prepare for examination by TEM. Electrons can be transmitted through smaller particles directly and larger particles can be thinned by crushing and dispersion onto a substrate or by embedding in a film followed by ion milling. Attempts at dispersion onto a thin film substrate often result in particle aggregation by van der Waals attraction. In the present work we studied 1-10 μm diameter Al2O3 spheres which were transformed from the amprphous state to the stable α phase.After the appropriate heat treatment, the spherical powders were embedded in as high a density as practicable in a hard EPON, and then microtomed into thin sections. There are several advantages to this method. Obviously, this is a rapid and convenient means to study the microstructure of serial slices. EDS, ELS, and diffraction studies are also considerably more informative. Furthermore, confidence in sampling reliability is considerably enhanced. The major negative feature is some distortion of the microstructure inherent to the microtoming operation; however, this appears to have been surprisingly small. The details of the method and some typical results follow.

Microstructural investigation of surface roughness in MBE-grown AlAs

1995 ◽  
Vol 53 ◽  
pp. 454-455
Author(s):  
R. Rajesh ◽  
R. Droopad ◽  
C. H. Kuo ◽  
R. W. Carpenter ◽  
G. N. Maracas
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Growth Control ◽  
Native Oxide ◽  
Effusion Cell ◽  
Surface Oxide Layer ◽  
Microstructural Investigation ◽  
Mbe Growth ◽  
Film Substrate ◽  
And Control

Knowledge of material pseudodielectric functions at MBE growth temperatures is essential for achieving in-situ, real time growth control. This allows us to accurately monitor and control thicknesses of the layers during growth. Undesired effusion cell temperature fluctuations during growth can thus be compensated for in real-time by spectroscopic ellipsometry. The accuracy in determining pseudodielectric functions is increased if one does not require applying a structure model to correct for the presence of an unknown surface layer such as a native oxide. Performing these measurements in an MBE reactor on as-grown material gives us this advantage. Thus, a simple three phase model (vacuum/thin film/substrate) can be used to obtain thin film data without uncertainties arising from a surface oxide layer of unknown composition and temperature dependence.In this study, we obtain the pseudodielectric functions of MBE-grown AlAs from growth temperature (650°C) to room temperature (30°C). The profile of the wavelength-dependent function from the ellipsometry data indicated a rough surface after growth of 0.5 μm of AlAs at a substrate temperature of 600°C, which is typical for MBE-growth of GaAs.

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

Indentation load relaxation experiments with indentation depth in the submicron range

1990 ◽  
Vol 5 (10) ◽  
pp. 2100-2106 ◽  
Author(s):  
W. R. LaFontaine ◽  
B. Yost ◽  
R. D. Black ◽  
C-Y. Li
Keyword(s):  
Indentation Depth ◽  
Metal Films ◽  
Indentation Load ◽  
Hard Substrate ◽  
Flow Properties ◽  
Load Relaxation ◽  
Relaxation Data ◽  
Flow Curves ◽  
Relaxation Experiments

Indentation load relaxation (ILR) experiments with indentation depths in the submicron range are described. Under appropriate conditions, the ILR data are found to yield flow curves of the same shape as those based on conventional load relaxation data. Variations in flow properties as a function of depth in submicron metal films deposited on a hard substrate are detected by the experiments described.

Photoacoustic elastic bending in thin film—Substrate system

2013 ◽  
Vol 114 (21) ◽  
pp. 213510 ◽  
Author(s):  
D. M. Todorović ◽  
M. D. Rabasović ◽  
D. D. Markushev
Keyword(s):  
Thin Film ◽  
Elastic Bending ◽  
Film Substrate

Exotic Doping for Zno Thin Films: Possibility of Monolithic Optical Integrated Circuit

1999 ◽  
Vol 574 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tamaki Shimura ◽  
Toshifumi Wakano ◽  
Atsushi Ashida ◽  
Taichiro Ito
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nonlinear Optic ◽  
Integrated Circuit ◽  
Film Surface ◽  
Zno Thin Films ◽  
Process Window ◽  
Electro Optic ◽  
Film Substrate ◽  
Optical Integrated Circuit

AbstractWe propose the application of ZnO:X (X = Li, Mg, N, In, Al, Mn, Gd, Yb etc.) films for a monolithic Optical Integrated Circuit (OIC). Since ZnO exhibits excellent piezoelectric effect and has also electro-optic and nonlinear optic effects and the thin films are easily obtained, it has been studied as one of the important thin film wave guide materials especially for an acoustooptic device[1]. In terms of electro-optic and nonlinear optic effects, however, LiNbO3 or LiTaO3 is superior to ZnO. The most important issue of thin film waveguide using such ferroelectrics is optical losses at the film/substrate interface and the film surface, because the process window to control the surface morphology is very narrow due to their high deposition temperature. Since ZnO can be grown at extremely low temperature, the roughness at the surface and the interface is expected to be minimized. This is the absolute requirement especially for waveguide using a blue or ultraviolet laser. Recently, lasing at the wavelength of ultraviolet, ferroelectric and antiferromagnetic behaviors of ZnO doped with various exotic elements (exotic doping) have been reported. This paper discusses the OIC application of ZnO thin films doped with exotic elements.

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