Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

Interfacial Adhesion of Pure-Silica-Zeolite Low-k Thin Films

2005 ◽  
Vol 875 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Laser Spallation ◽  
Si Substrates ◽  
Low Dielectric ◽  
Pure Silica ◽  
Film Substrate ◽  
First Time

AbstractNanoporous zeolite thin films are promising candidates as future low dielectric constant (low-k) materials. During the integration process with other semiconductor materials, the residual stresses resulting from the synthesis processes may cause fracture or delamination of the thin films. In order to achieve high quality low-k zeolite thin films, the evaluation of the adhesion performance is important. In this paper, laser spallation technique is utilized to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces prepared using three different processes. The experimental results demonstrate that the nature of the deposition method has a great effect on the resulted interfacial adhesion of the film-substrate interfaces. This is the first time that the interfacial strength of zeolite thin films-Si substrates is quantitatively evaluated. The results have great significance in the future applications of low-k zeolite thin film materials.

Interfacial Adhesion of Nanoporous Zeolite Thin Films

Materials ◽  
2004 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Films ◽  
Interfacial Adhesion ◽  
High Performance ◽  
Interfacial Strength ◽  
Synthesis Process ◽  
Seeded Growth ◽  
Thermal Methods ◽  
Laser Spallation ◽  
First Time ◽  
Low K

Nanoporous zeolite thin films are promising candidates as future low-k materials. During the integration with other semiconducting materials, the high stresses resulted from the synthesis process can cause the film to fracture or delaminate from the substrates. Evaluating the interfacial adhesion of zeolite thin films is very important in achieving high performance low-k materials. In this work, laser spallation technique is utilized to investigate the interfacial strength of zeolite thin films from three different synthesis processes. The preliminary results show that the fully crystalline zeolite thin films from hydro-thermal in-situ and seeded growth methods have a stronger interface than that from the spin-on process. Effort is also being made to compare the interfacial strength of the zeolite films between the two hydro-thermal methods. This is the first time that the interfacial strength of zeolite thin films is quantitatively evaluated. The results have great significance in the future applications of low-k zeolite thin films.

Real Time Ellipsometric Study of Boron Nitride Thin Film Growth

1995 ◽  
Vol 410 ◽  
Author(s):  
E. Bertran ◽  
A. Canillas ◽  
J. Campmany ◽  
M. El Kasmi ◽  
E. Pascual ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Boron Nitride ◽  
Real Time ◽  
Film Growth ◽  
Thin Film Growth ◽  
Si Substrates ◽  
Rf Glow Discharge

ABSTRACTWe present an in situ study of the growth of boron nitride thin films by real time ellipsometry. Films were produced in a PECVD reactor by rf glow discharge decomposition of ammonia (pure) and diborane (1% in hydrogen), on Ni-Cr coated c-Si substrates placed either on the powered electrode or on the grounded electrode of the reactor. A fast phase-modulated ellipsometer performed the real time monitoring of the growth processes at 350 nm. The ellipsometric angle trayectories were obtained through an autocalibrated method, especially suitable for the in situ optical analysis of transparent thin films. We applied several thin film growth optical models (homogeneous, two-layer, surface roughness) to analyze parameters of the films such as refractive index, extinction coefficient, roughness and deposition rate. In all the cases studied, the two-layer model fits well with the ellipsometric measurements, but a more sofisticated model considering a variable refractive index could better describe these films.

In Situ Measurement of Stress. Included During Annealing, in A1-2%Cu Thin Films

1985 ◽  
Vol 47 ◽  
Author(s):  
P. H. Townsend ◽  
H. A. Vander Plas
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Plastic Deformation ◽  
Stress Relaxation ◽  
Thermal Cycling ◽  
Compressive Stress ◽  
Stress Measurement ◽  
Metal Films ◽  
Si Substrates

ABSTRACTStress measurement in thin film systems is discussed and applied to Al-2%Cu filns on SiO2/Si substrates during thermal cycling. Plastic deformation obscrved during compressive stress relaxation is correlated with the formation of hillocks on the metal films. The effect of secondary layers of 10%Ti-90%W on the thermo-mcchanical response of Al films is examined.

Characterisation of Interfacial Adhesion of Thin Film/Substrate Systems Using Indentation-Induced Delamination: A Focused Review

2012 ◽  
Vol 533 ◽  
pp. 201-222 ◽  
Author(s):  
Ming Yuan Lu ◽  
Hong Tao Xie ◽  
Han Huang
Keyword(s):  
Thin Film ◽  
Acoustic Emission ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Theoretical Models ◽  
Experimental Investigations ◽  
Cross Sectional ◽  
Element Simulation ◽  
Quantitative Characterisation ◽  
Film Substrate

This review summarized the research works on the characterisation of interfacial adhesion in thin film/substrate bilayer structure by use of indentation testing. It focused on the delamination mechanics between a thin film and a substrate induced by indentation and the quantitative characterisation of interfacial strength in such bilayer systems. Three major techniques were introduced, namely conventional indentation, cross-sectional indentation and acoustic emission assisted indentation. A number of theoretical models and finite element simulation studies were discussed, in association with the experimental investigations. Key words:Thin film, bilayer, delamination, adhesion, indentation, acoustic emission

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

In-situ growth of high-performance (Ag, Sn) co-doped CoSb3 thermoelectric thin films

2021 ◽  
Author(s):  
Zhuang-Hao Zheng ◽  
Jun-Yun Niu ◽  
Dong-Wei Ao ◽  
Bushra Jabar ◽  
Xiao-Lei Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
In Situ Growth ◽  
Thermoelectric Thin Films ◽  
Co Doped

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

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