Indentation Load Relaxation Experiments on Al-Si Metallizations
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ABSTRACTIndentation load relaxation (ILR) experiments with indentation depths in the submicron range are described. The observed flow behavior of a 1μm thick A1-2%Si film deposited on a silicon substrate depended on the depth of penetration. For shallow penetration depths, the shape of the flow curves obtained from this sample are similar to those obtained from a conventional load relaxation test of a bulk specimen. For penetration depths close to the film/substrate interface, the influence of the substrate on the film's deformation behavior was observed.
1990 ◽
Vol 5
(10)
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pp. 2100-2106
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2006 ◽
Vol 21
(8)
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pp. 2003-2010
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2010 ◽
Vol 433
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pp. 235-240
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2013 ◽
Vol 586
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pp. 31-34
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2017 ◽
Vol 10
(5)
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pp. 1638
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