Atomic-Layer Deposition of ZrO2 Thin Films Using New Alkoxide Precursors

MRS Proceedings ◽

10.1557/proc-716-b3.5 ◽

2002 ◽

Vol 716 ◽

Cited By ~ 5

Author(s):

Anthony C. Jones ◽

Paul A. Williams ◽

John L. Roberts ◽

Timothy J. Leedham ◽

Hywel O. Davies ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Gate Dielectric ◽

Atomic Layer ◽

Promising Technique ◽

Layer Deposition ◽

Alkoxide Precursors

AbstractAtomic layer deposition is a promising technique for the deposition of ZrO2 thin films for high-k gate dielectric applications. However, there are a number of problems associated with existing Zr precursors such as ZrCl4 and [Zr(OBut)4]. In this paper, we examine the ALD of ZrO2 using the new alkoxide complexes, [Zr(OBut)2(dmae)2], [Zr(OPr1)2(dmae)2] and [Zr(dmae)4] (dmae = [OCH2CH2NMe2]), and compare the results with data obtained using [Zr(OBut)4].

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Characteristics of ZrO 2 Thin Films by Atomic Layer Deposition for Alternative Gate Dielectric Applications

Integrated Ferroelectrics ◽

10.1080/713718334 ◽

2002 ◽

Vol 48 (1) ◽

pp. 23-32 ◽

Cited By ~ 5

Author(s):

Juwhan Park ◽

Bongsik Choi ◽

Nohhon Park ◽

Hyun-Jung Shin ◽

Jae-Gab Lee ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Gate Dielectric ◽

Atomic Layer ◽

Layer Deposition

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Robust SiO2 gate dielectric thin films prepared through plasma-enhanced atomic layer deposition involving di-sopropylamino silane (DIPAS) and oxygen plasma: Application to amorphous oxide thin film transistors

Ceramics International ◽

10.1016/j.ceramint.2017.10.075 ◽

2018 ◽

Vol 44 (2) ◽

pp. 1556-1565 ◽

Cited By ~ 8

Author(s):

Yoo-Jin Choi ◽

Seung-Muk Bae ◽

Jae-Hwan Kim ◽

Eui-Hyun Kim ◽

Hee-Soo Hwang ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Oxygen Plasma ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Thin Film ◽

Dielectric Thin Films ◽

Layer Deposition

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Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric

Thin Solid Films ◽

10.1016/j.tsf.2008.08.064 ◽

2008 ◽

Vol 517 (1) ◽

pp. 201-203 ◽

Cited By ~ 29

Author(s):

M. Roeckerath ◽

T. Heeg ◽

J.M.J. Lopes ◽

J. Schubert ◽

S. Mantl ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Thin Films ◽

Lutetium Oxide ◽

Layer Deposition

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Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

Thin Solid Films ◽

10.1016/j.tsf.2016.02.046 ◽

2016 ◽

Vol 617 ◽

pp. 138-142 ◽

Cited By ~ 5

Author(s):

Raffaella Lo Nigro ◽

Emanuela Schilirò ◽

Giuseppe Greco ◽

Patrick Fiorenza ◽

Fabrizio Roccaforte

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Gate Dielectric ◽

Atomic Layer ◽

Surface Treatments ◽

Layer Deposition

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Atomic Layer Deposition of Bi[sub 1−x−y]Ti[sub x]Si[sub y]O[sub z] Thin Films from Alkoxide Precursors and Water

Journal of The Electrochemical Society ◽

10.1149/1.1984427 ◽

2005 ◽

Vol 152 (9) ◽

pp. F124 ◽

Cited By ~ 4

Author(s):

Yo-Sep Min ◽

Young Jin Cho ◽

Ju-Hye Ko ◽

Eun Ju Bae ◽

Wanjun Park ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition ◽

Alkoxide Precursors

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Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films

Applied Physics Letters ◽

10.1063/1.1866219 ◽

2005 ◽

Vol 86 (7) ◽

pp. 073116 ◽

Cited By ~ 27

Author(s):

Riikka L. Puurunen ◽

Annelies Delabie ◽

Sven Van Elshocht ◽

Matty Caymax ◽

Martin L. Green ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Hafnium Oxide ◽

Gate Dielectric ◽

Oxide Films ◽

Atomic Layer ◽

Layer Deposition

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Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c01079 ◽

2021 ◽

Vol 3 (2) ◽

pp. 999-1005

Author(s):

Hyeok Jae Lee ◽

Jin Ha Hwang ◽

Ji-Yong Park ◽

Sang Woon Lee

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Titanium Nitride ◽

Surface Reaction ◽

Atomic Layer ◽

Reaction Route ◽

Layer Deposition

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Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.764-765.138 ◽

2015 ◽

Vol 764-765 ◽

pp. 138-142 ◽

Cited By ~ 1

Author(s):

Fa Ta Tsai ◽

Hsi Ting Hou ◽

Ching Kong Chao ◽

Rwei Ching Chang

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

High Performance ◽

Atomic Layer ◽

Electric Properties ◽

X Ray Diffraction ◽

Layer Deposition ◽

Azo Thin Film ◽

Aluminum Doped Zinc Oxide ◽

Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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