Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films

2005 ◽  
Vol 86 (7) ◽  
pp. 073116 ◽  
Author(s):  
Riikka L. Puurunen ◽  
Annelies Delabie ◽  
Sven Van Elshocht ◽  
Matty Caymax ◽  
Martin L. Green ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Gate Dielectric ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition

Evaluation of tetrakis(diethylamino)hafnium Precursor in the Formation of Hafnium Oxide Films Using Atomic Layer Deposition

2003 ◽  
Vol 765 ◽  
Author(s):  
Ronald Inman ◽  
Anand Deshpande ◽  
Gregory Jursich
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Gate Dielectric ◽  
Oxide Films ◽  
Atomic Layer ◽  
Silicon Oxynitride ◽  
Metal Chlorides ◽  
Layer Deposition ◽  
Organometallic Precursors ◽  
High Dielectric

AbstractDue to their compatibility with silicon interface and high dielectric constant, films containing hafnium oxide are becoming strong candidates in replacing silicon oxynitride as the gate dielectric layer in CMOS devices. To achieve ultimate conformality and thickness control, atomic layer deposition is receiving much more attention in recent years for nanometer size film applications. For hafnium oxide deposition by ALD, metal chlorides have traditionally been used as precursors with moisture being the co-reactant; however for gate oxide applications, metal chlorides are not considered suitable due to the corrosive nature of these compounds and the risks of film contamination. Hence, researchers are exploring alternate organometallic precursors in a CVD process with oxygen being the co-reactant. In this work, tetrakis (diethylamino) hafnium precursor is used in an ALD process with moisture co-reactant to deposit hafnium oxide films onto H-terminated Si substrate in a temperature regime of 200 to 350 C. Film composition is determined by x-ray analysis and is found to be stoichiometric without residue from ligand decomposition. Film thickness and uniformity is measured as a function of substrate temperature and reagent pulsing characteristics. These results will be presented and compared with that obtained with the more conventional hafnium chloride precursor.

scholarly journals Preparation of Hafnium Oxide Thin Films grown by Atomic Layer Deposition

2005 ◽  
Vol 15 (4) ◽  
pp. 275-280
Author(s):  
Hie-Chul Kim ◽  
Min-Wan Kim ◽  
Hyung-Su Kim ◽  
Hyug-Jong Kim ◽  
Woo-Keun Sohn ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen

2002 ◽  
Vol 92 (10) ◽  
pp. 5698-5703 ◽  
Author(s):  
Kaupo Kukli ◽  
Mikko Ritala ◽  
Jonas Sundqvist ◽  
Jaan Aarik ◽  
Jun Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition

Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films

2004 ◽  
Vol 96 (9) ◽  
pp. 5298-5307 ◽  
Author(s):  
Kaupo Kukli ◽  
Jaan Aarik ◽  
Mikko Ritala ◽  
Teet Uustare ◽  
Timo Sajavaara ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Deposition Parameters ◽  
Layer Deposition

Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis(dimethylamino)Hafnium (TDMAH) and Ozone

2003 ◽  
Vol 765 ◽  
Author(s):  
Xinye Liu ◽  
Sasangan Ramanathan ◽  
Thomas E. Seidel
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Temperature Dependence ◽  
Deposition Rate ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Probe Measurements

AbstractHafnium oxide (HfO2) thin films were synthesized from tetrakis(dimethylamino) hafnium (TDMAH) and ozone (O3) by atomic layer deposition (ALD) on 200 mm silicon wafers. Gradual saturation was observed for TDMAH exposure pulse. However O3 showed better saturation behavior for O3exposure. Yet, 100% step coverage was achieved for ~100nm trenches with aspect ratio of 35. Temperature dependence of the deposition rate was studied at susceptor temperature from 160°C to 420°C. The lowest deposition rate was observed at 320°C. Mercury probe measurements indicated the dielectric constant increased from 16 to 20 as susceptor temperature increased from 200°C to 320°C. Selected comparisons with tetrakis (ethylmethylamino) hafnium (TEMAH) were also made.

Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors

2007 ◽  
Vol 22 (7) ◽  
pp. 1899-1906 ◽  
Author(s):  
Yan-Kai Chiou ◽  
Che-Hao Chang ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Charge Density ◽  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Breakdown Field ◽  
Layer Deposition

The growth of HfO2 thin films on a HF-dipped p-Si(100) substrate at 200 °C by atomic-layer deposition (ALD) using Hf[N(C2H5)(CH3)]4 and H2O vapor as precursors is demonstrated. Uniform HfO2 thin films are obtained on a 4-in. silicon wafer, and the energy-band gap and band offset are determined by x-ray photoelectron spectroscopy analysis. The as-deposited HfO2 thin film is amorphous and able to crystallize at 500 ∼ 600 °C with only the monoclinic phase. As for the electrical performance of Au–Ti–HfO2–Si metal oxide semiconductor capacitors, a dielectric constant of ∼17.8 and an equivalent oxide thickness value of ∼1.39 nm are obtained from the 40-cycle ALD film after annealing at 500 °C. In addition, the breakdown field is in the range of 5 ∼ 5.5 MV/cm, and the fixed charge density is on the order of 1012 cm−2, depending on the annealing temperatures. The interface quality of HfO2 thin films on silicon is satisfactory with an interface-trap charge density of ∼3.7 × 1011 cm−2 eV−1.

Characteristics of ZrO 2 Thin Films by Atomic Layer Deposition for Alternative Gate Dielectric Applications

2002 ◽  
Vol 48 (1) ◽  
pp. 23-32 ◽  
Author(s):  
Juwhan Park ◽  
Bongsik Choi ◽  
Nohhon Park ◽  
Hyun-Jung Shin ◽  
Jae-Gab Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of thin hafnium oxide films using a carbon free precursor

2003 ◽  
Vol 93 (1) ◽  
pp. 712-718 ◽  
Author(s):  
J. F. Conley ◽  
Y. Ono ◽  
D. J. Tweet ◽  
W. Zhuang ◽  
R. Solanki
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition
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