Characteristics of ZrO 2 Thin Films by Atomic Layer Deposition for Alternative Gate Dielectric Applications

2002 ◽  
Vol 48 (1) ◽  
pp. 23-32 ◽  
Author(s):  
Juwhan Park ◽  
Bongsik Choi ◽  
Nohhon Park ◽  
Hyun-Jung Shin ◽  
Jae-Gab Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Layer Deposition

Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric

2008 ◽  
Vol 517 (1) ◽  
pp. 201-203 ◽  
Author(s):  
M. Roeckerath ◽  
T. Heeg ◽  
J.M.J. Lopes ◽  
J. Schubert ◽  
S. Mantl ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Lutetium Oxide ◽  
Layer Deposition

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

2016 ◽  
Vol 617 ◽  
pp. 138-142 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Emanuela Schilirò ◽  
Giuseppe Greco ◽  
Patrick Fiorenza ◽  
Fabrizio Roccaforte
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Surface Treatments ◽  
Layer Deposition

Atomic-Layer Deposition of ZrO2 Thin Films Using New Alkoxide Precursors

2002 ◽  
Vol 716 ◽  
Author(s):  
Anthony C. Jones ◽  
Paul A. Williams ◽  
John L. Roberts ◽  
Timothy J. Leedham ◽  
Hywel O. Davies ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Promising Technique ◽  
Layer Deposition ◽  
Alkoxide Precursors

AbstractAtomic layer deposition is a promising technique for the deposition of ZrO2 thin films for high-k gate dielectric applications. However, there are a number of problems associated with existing Zr precursors such as ZrCl4 and [Zr(OBut)4]. In this paper, we examine the ALD of ZrO2 using the new alkoxide complexes, [Zr(OBut)2(dmae)2], [Zr(OPr1)2(dmae)2] and [Zr(dmae)4] (dmae = [OCH2CH2NMe2]), and compare the results with data obtained using [Zr(OBut)4].

Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films

2005 ◽  
Vol 86 (7) ◽  
pp. 073116 ◽  
Author(s):  
Riikka L. Puurunen ◽  
Annelies Delabie ◽  
Sven Van Elshocht ◽  
Matty Caymax ◽  
Martin L. Green ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Gate Dielectric ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity

2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition
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