Atomic Layer Deposition of Bi[sub 1−x−y]Ti[sub x]Si[sub y]O[sub z] Thin Films from Alkoxide Precursors and Water

2005 ◽  
Vol 152 (9) ◽  
pp. F124 ◽  
Author(s):  
Yo-Sep Min ◽  
Young Jin Cho ◽  
Ju-Hye Ko ◽  
Eun Ju Bae ◽  
Wanjun Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Alkoxide Precursors

Atomic-Layer Deposition of ZrO2 Thin Films Using New Alkoxide Precursors

2002 ◽  
Vol 716 ◽  
Author(s):  
Anthony C. Jones ◽  
Paul A. Williams ◽  
John L. Roberts ◽  
Timothy J. Leedham ◽  
Hywel O. Davies ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Promising Technique ◽  
Layer Deposition ◽  
Alkoxide Precursors

AbstractAtomic layer deposition is a promising technique for the deposition of ZrO2 thin films for high-k gate dielectric applications. However, there are a number of problems associated with existing Zr precursors such as ZrCl4 and [Zr(OBut)4]. In this paper, we examine the ALD of ZrO2 using the new alkoxide complexes, [Zr(OBut)2(dmae)2], [Zr(OPr1)2(dmae)2] and [Zr(dmae)4] (dmae = [OCH2CH2NMe2]), and compare the results with data obtained using [Zr(OBut)4].

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity

2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

Retention of Surface Structure Causes Lower Density in Atomic Layer Deposition of Amorphous Titanium Oxide Thin Films

2021 ◽  
Author(s):  
Benjamin Rich ◽  
Yael Etinger-Geller ◽  
G. Ciatto ◽  
A Katsman ◽  
Boaz Pokroy
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Structure ◽  
Titanium Oxide ◽  
Size Effects ◽  
Atomic Layer ◽  
Tio2 Films ◽  
Structural Modifications ◽  
Layer Deposition ◽  
Amorphous Tio2

Size effects and structural modifications in amorphous TiO2 films deposited by atomic layer deposition (ALD) were investigated. As with the previously investigated ALD-deposited Al2O3 system we found that the film’s...

Neodymium oxide and neodymium aluminate thin films by atomic layer deposition

2005 ◽  
Vol 479 (1-2) ◽  
pp. 152-159 ◽  
Author(s):  
Anne Kosola ◽  
Jani Päiväsaari ◽  
Matti Putkonen ◽  
Lauri Niinistö
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Neodymium Oxide ◽  
Layer Deposition

Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films

2012 ◽  
Vol 100 (5) ◽  
pp. 053106 ◽  
Author(s):  
S. M. Prokes ◽  
O. J. Glembocki ◽  
Erin Cleveland ◽  
Josh D. Caldwell ◽  
Edward Foos ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition
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