Deep-Levels Associated with Implanted Titanium in Silicon

1986 ◽  
Vol 71 ◽  
Author(s):  
Craig M. Ransom ◽  
S.S. Iyer
Keyword(s):  
Minority Carrier ◽  
Schottky Diodes ◽  
Deep Levels ◽  
Type Silicon ◽  
Carrier Traps ◽  
Four Levels ◽  
P Type ◽  
Ion Implanted

AbstractTitanium was ion implanted at 180 KeV into p-type silicon to form a buried TiSi2 layer. DLTS measurements of n+p junctions have shown two minority carrier traps at Ec − Et = 0.24 and 0.51 eV. Also, a single majority trap at Ev + Et = 0.41 eV was observed. The concentrations of these levels were calculated to be approximately 1013 cm−3. DLTS measurements of low-fluence 50 KeV Ti implantations using Schottky diodes showed four levels dependent on silcon type.

Minority carrier traps in Czochralski-grown p-type silicon crystals doped with B, Al, Ga, or In impurity atoms

2020 ◽  
Author(s):  
Joyce Ann T. De Guzman ◽  
Vladimir P. Markevich ◽  
Simon Hammersley ◽  
Ian D. Hawkins ◽  
Iain Crowe ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Impurity Atoms ◽  
Type Silicon ◽  
Silicon Crystals ◽  
Carrier Traps ◽  
P Type

Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

1995 ◽  
Vol 67 (1) ◽  
pp. 88-90 ◽  
Author(s):  
D. C. Leung ◽  
P. R. Nelson ◽  
O. M. Stafsudd ◽  
J. B. Parkinson ◽  
G. E. Davis
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Type Silicon ◽  
P Type

The effect of oxide precipitates on minority carrier lifetime in p-type silicon

2011 ◽  
Vol 110 (5) ◽  
pp. 053713 ◽  
Author(s):  
J. D. Murphy ◽  
K. Bothe ◽  
M. Olmo ◽  
V. V. Voronkov ◽  
R. J. Falster
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Silicon ◽  
P Type

Detection of minority carrier traps in p-type 4H-SiC

2014 ◽  
Vol 104 (9) ◽  
pp. 092105 ◽  
Author(s):  
G. Alfieri ◽  
T. Kimoto
Keyword(s):  
Minority Carrier ◽  
Carrier Traps ◽  
P Type
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