Investigation of the Temperature-Dependent Surface Morphology of p-Sexiphenyl Thin Films on KCl(001)

2001 ◽  
Vol 708 ◽  
Author(s):  
E.J. Kintzel ◽  
E.S. Gillman ◽  
J.G. Skofronick ◽  
S.A. Safron ◽  
D.-M. Smilgies
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Vacuum Chamber ◽  
Base Pressure ◽  
Temperature Dependent ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies

ABSTRACTInvestigation into the temperature dependence of the surface morphology of a thin film of p-sexiphenyl (p-6P) on KCl(001) was carried out by atomic force microscopy (AFM). An individual p-6P film was prepared by vapor deposition at a base pressure of ∼1x10-8 mbar onto a KCl(001) surface which was maintained at 323 K during deposition. The AFM was carried out in a separate vacuum chamber, in situ, at a base pressure of ∼1x10-6 mbar. The p-6P film was cooled and maintained at discrete temperatures in the range from 294 K to 128 K as AFM measurements were performed. Similar surface morphologies are observed for film temperatures maintained at 294, 264, and 227 K, and 188 and 128 K during the AFM measurements. AFM images for the first set of film temperatures (294 - 227 K) indicate the presence of block-like islands of p-6P, with well-defined crystallite boundaries. AFM images of the films in the second set (188 and 128 K) indicate the presence of triangular wedge-shaped structures of p-6P preferentially aligned nearly in the direction of the [110]KCl. Comparison of these wedge-shaped structures at the indicated film temperatures reveals they are rotated by approximately 180° with respect to each other. Subsequent images of the surface of the p-6P film captured again at 294 K, after the final 128 K temperature study was completed, revealed the same surface features found for the initial 294 K film temperature.

Surface morphology of As-deposited and laser-damaged dielectric mirror coatings studied in-situ by atomic force microscopy

1992 ◽  
Author(s):  
Mark R. Kozlowski ◽  
Michael C. Staggs ◽  
Mehdi Balooch ◽  
Robert J. Tench ◽  
Wigbert J. Siekhaus
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Dielectric Mirror ◽  
Atomic Force

Chromic Polydiacetylene Single Crystals: Atomic Force Microscopy Studies

1995 ◽  
Vol 413 ◽  
Author(s):  
V. Shivshankar ◽  
C. Sung ◽  
J. Kumar ◽  
S. K. Tripathy ◽  
D. J. Sandman
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystals ◽  
Ambient Conditions ◽  
Free Standing ◽  
Force Microscopy ◽  
Sensor Performance ◽  
Atomic Force ◽  
Variable Surface

ABSTRACTWe have studied the surface morphology of free standing single crystals of thermochromic polydiacetylenes (PDAs), namely, ETCD and IPUDO (respectively, the ethyl and isopropyl urethanes of 5,7-dodecadiyn-1,12-diol), by Atomic Force Microscopy (AFM) under ambient conditions. Micron scale as well as molecularly resolved images were obtained. The micron scale images indicate a variable surface, and the molecularly resolved images show a well defined 2-D lattice that is interpreted in terms of molecular models and known crystallographic data. Thereby information about surface morphology, which is crucial to potential optical device or chromic sensor performance is available. We also report the observation of a “macroscopic shattering” of the IPUDO monomer crystal during in-situ UV polymerization studies.

Direct Observation of SEI Formation and Lithiation in Thin-Film Silicon Electrodes via in Situ Electrochemical Atomic Force Microscopy

2019 ◽  
Vol 2 (9) ◽  
pp. 6761-6767 ◽  
Author(s):  
Svenja Benning ◽  
Chunguang Chen ◽  
Rüdiger-A. Eichel ◽  
Peter H. L. Notten ◽  
Florian Hausen
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Direct Observation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Thin Film Silicon

Mechanisms of Fatigue in Polysilicon Mems Structures

2001 ◽  
Vol 687 ◽  
Author(s):  
P. Shrotriya ◽  
S. Allameh ◽  
A. Butterwick ◽  
S. Brown ◽  
W.O. Soboyejo
Keyword(s):  
Perturbation Analysis ◽  
Fatigue Crack Initiation ◽  
Surface Topology ◽  
Linear Perturbation ◽  
Silica Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies ◽  
Surface Silica

AbstractFatigue crack initiation is shown to be associated with the stress-assisted evolution of a surface silica layer that forms during the normal exposure of unpassivated polysilicon surfaces to lab air In-situ atomic force microscopy (AFM) techniques are used to reveal the evolution of overall surface topology during incremental cyclic deformation to failure. Linear perturbation analysis of stress-assisted dissolution is then utilized to predict the evolution of the surface morphology. The predictions from the perturbation analysis are shown to be consistent with measured surface morphologies obtained using AFM techniques.

An in-situ hot stage for temperature-dependent tapping-mode™ atomic force microscopy

1998 ◽  
Vol 69 (9) ◽  
pp. 3245-3250 ◽  
Author(s):  
S. G. Prilliman ◽  
A. M. Kavanagh ◽  
E. C. Scher ◽  
S. T. Robertson ◽  
K. S. Hwang ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Temperature Dependent ◽  
Tapping Mode ◽  
Force Microscopy ◽  
Atomic Force

Fractal Analysis of Morphological Image of Organic Phthalocyanine Tetrasulfonic Acid Tetrasodium (TsNiPc) Film

2014 ◽  
Vol 895 ◽  
pp. 407-410
Author(s):  
Yeo Lee Kong ◽  
S.V. Muniandy ◽  
M.S. Fakir ◽  
K. Sulaiman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fractal Dimension ◽  
Organic Thin Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Power Spectral ◽  
Spectral Density Method ◽  
Surface Morphologies ◽  
Conductivity Of Thin Films

Surface morphology of thin films can be efficiently characterized using power spectral density method. Spectral based parameters from surface models can then be linked to electrical conductivity of thin films used for fabricating organic photovoltaic devices. In this study, the surface morphologies of the organic thin films phthalocyanine tetrasulfonic acid tetrasodium (TsNiPc) are investigated using atomic force microscopy. The thin film samples are imaged at 40-minutes and 120-minutes after the solvent treatment. The spectral exponent β is determined from the slope of PSD log-log plot and the fractal dimension D of each film is calculated based on fractal relation β = 8 2D. The relationship between surface roughness and fractal dimension with respect to electrical properties of thin film is discussed.

Polyaniline Surface Morphology During The Doping Process Using Atomic Force Microscopy

1993 ◽  
Vol 328 ◽  
Author(s):  
Leonard J. Buckley
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Polymer Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Base Solution ◽  
Acid And Base ◽  
Polyaniline Films ◽  
Doped Polymer

ABSTRACTChemically synthesized polyaniline films were studied during the doping and dedoping process by imaging the polymer surface using in-situ Atomic Force Microscopy (AFM). The polymer, which was initially in the base non-conducting form was doped using aqueous acidic solutions of both tosylic (pH=0.2) and HCl (pH of 0.2 and 1.0). Dedoping was accomplished by exposing the same doped polymer surface to NH4OH (pH=12) base solution. AFM images showed that it was necessary to cycle the polymer surface 3 times between acid and base before a reproducible surface morphology was established between the doped and dedoped states. For the case of doping with tosylic acid AFM images showed that the polyaniline surface was immediately roughened. In addition there appeared to be an increase in the size of surface channels and cracks. When doping with HC1 (pH=1.0), no change in surface morphology was observed; however, noticeable surface roughening occurred over 10 Minutes for the case of the lower pH=0.2 solution. The complex permittivity and DC conductivity was measured to estimate the level of protonation in the AFM samples.

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