Effect of Ion Irradiation on the Formation of Ni, Cr and Pt Silicide

1981 ◽  
Vol 7 ◽  
Author(s):  
Leszek S. Wielunski ◽  
Chuen-Der Lien ◽  
Bai-Xin Liu ◽  
Marc-A. Nicolet
Keyword(s):  
Oxide Layer ◽  
Low Dose ◽  
Silicon Oxide ◽  
Ion Irradiation ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Metal Interface ◽  
Silicon Oxide Layer ◽  
X Ray ◽  
Dose Irradiation

ABSTRACTThe influence of Xe+, As+ and Si+ irradiation on the Ni, Cr and Pt-silicide formed upon subsequent thermal annealings has been investigated. Helium MeV backscattering spectrometry and x-ray diffraction have been used to analyze the samples. The effect of silicon-metal interface contamination has been observed using an intentionally formed thin silicon oxide layer. The oxide layer was thick enough to prevent thermal silicide formation in unirradiated samples. In irradiated samples, the silicide forms thermally in spite of the presence of this oxide layer for Ni and Cr, but not for Pt. Similar results were obtained for Xe+, As+ and Si+ irradiations. We attribute this effect to ion mixing of the interfacial layer. The differences between results obtained with Ni, Cr and Pt are discussed. These results demonstrate that a low-dose irradiation can render the process of silicide formation upon thermal annealing tolerant to interfacial impurities. On the other hand, we also show that ion irradition can inhibit Pt and Ni silicide formation.

Polycrystalline Silocon-Oxide-Nitride-Oxide-Silicon Flash Memory on SiO2 and Si3N4 Buffer Layer for System on Panels Application

2013 ◽  
Vol 658 ◽  
pp. 120-123
Author(s):  
Sang Youl Lee ◽  
Jae Sub Oh ◽  
Seung Dong Yang ◽  
Ho Jin Yun ◽  
Kwang Seok Jeong ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Buffer Layer ◽  
Flash Memory ◽  
Polycrystalline Silicon ◽  
Silicon Oxide ◽  
Memory Device ◽  
Nitride Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nitride Oxide

For the system on panel applications, we fabricated and analyzed the polycrystalline silicon (poly-Si) silicon-oxide-nitride-oxide-silicon (SONOS) memory device on different buffer layer such as oxide or nitride. The threshold voltage (VT) and transconductance (gm) are extracted from each device and the X-Ray Diffraction (XRD) measurement is carried out to interpret these characteristics. The results show the device on oxide layer has higher mobility and lower VT than on nitride layer. From the XRD spectra, it can be explained by the fact that the grain size of poly-Si on oxide layer has larger than on nitride layer. The both devices show program/erase characteristics as the potential of SOP memory devices.

Uranium–molybdenum nuclear fuel plates behaviour under heavy ion irradiation: An X-ray diffraction analysis

2009 ◽  
Vol 385 (2) ◽  
pp. 449-455 ◽  
Author(s):  
H. Palancher ◽  
N. Wieschalla ◽  
P. Martin ◽  
R. Tucoulou ◽  
C. Sabathier ◽  
...  
Keyword(s):  
Diffraction Analysis ◽  
Nuclear Fuel ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
X Ray Diffraction ◽  
X Ray ◽  
Heavy Ion Irradiation

scholarly journals Strain/Damage in Crystalline Materials Bombarded by MeV Ions: Recrystallization of GaAs by High-Dose Irradiation

1984 ◽  
Vol 35 ◽  
Author(s):  
C. R. Wie ◽  
T. Vreeland ◽  
T. A. Tombrello
Keyword(s):  
Surface Layer ◽  
Energy Loss ◽  
Ion Irradiation ◽  
Stopping Power ◽  
High Dose ◽  
Double Crystal ◽  
Saturation Phenomenon ◽  
Nuclear Stopping ◽  
X Ray ◽  
Dose Irradiation

ABSTRACTMeV ion irradiation effects on semiconductor crystals, GaAs(100) and Si (111) and on an insulating crystal CaF2 (111) have been studied by the x-ray rocking curve technique using a double crystal x-ray diffractometer. The results on GaAs are particularly interesting. The strain developed by ion irradiation in the surface layers of GaAs (100) saturates to a certain level after a high dose irradiation (typically 1015/cm2), resulting in a uniform lattice spacing about 0.4% larger than the original spacing of the lattice planes parallel to the surface. The layer of uniform strain corresponds in depth to the region where electronic energy loss is dominant over nuclear collision energy loss. The saturated strain level is the same for both p-type and n-type GaAs. In the early stages of irradiation, the strain induced in the surface is shown to be proportional to the nuclear stopping power at the surface and is independent of electronic stopping power. The strain saturation phenomenon in GaAs is discussed in terms of point defect saturation in the surface layer.An isochronal (15 min.) annealing was done on the Cr-doped GaAs at temperatures between 200° C and 700° C. The intensity in the diffraction peak from the surface strained layer jumps at 200° C < T ≤ 300° C. The strain decreases gradually with temperature, approaching zero at T ≤ 500° C.The strain saturation phenomenon does not occur in the irradiated Si. The strain induced in Si is generally very low (less than 0.06%) and is interpreted to be mostly in the layers adjacent to the maximum nuclear stopping region, with zero strain in the surface layer. The data on CaF2 have been analysed with a kinematical x-ray diffraction theory to get quantitative strain and damage depth profiles for several different doses.

scholarly journals Titanium Silicide Formation in Presence of Oxygen

1992 ◽  
Vol 15 (1) ◽  
pp. 9-26 ◽  
Author(s):  
C. Nobili ◽  
F. Nava ◽  
G. Ottaviani ◽  
M. Costato ◽  
G. De Santi ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
Metal Oxidation ◽  
X Ray Diffraction ◽  
Amorphous Films ◽  
Titanium Disilicide ◽  
X Ray

In-situ resistivity vs. temperature, Rutherford backscattering spectrometry, Auger electron spectroscopy and X-ray diffraction measurements have been performed in order to study the effects arising from the presence of oxygen in the annealing ambient on the integrity of amorphous films of TiSix, with x ranging from 1.45 to 2.1. Crystalisation occurs around 400 C. The presence of oxygen produces the formation of silicon and titanium oxide around 500 C. Critical analysis of the experimental results have indicated that metal oxidation is inhibited when an excess of silicon is present, which suggests the use of a sputtered Si coating cap as a medium capable of effectively decoupling the silicide film from oxygen. This avoids unwanted Ti oxidation even in heavily oxygen contaminated ambients up to the highest temperatures used for the formation of low resistivity titanium disilicide.

Optical properties of uniformly sized silicon nanocrystals within a single silicon oxide layer

2013 ◽  
Vol 15 (4) ◽  
Author(s):  
A. En Naciri ◽  
P. Miska ◽  
A.-S. Keita ◽  
Y. Battie ◽  
H. Rinnert ◽  
...  
Keyword(s):  
Optical Properties ◽  
Oxide Layer ◽  
Silicon Nanocrystals ◽  
Silicon Oxide ◽  
Silicon Oxide Layer

Ion Irradiation Effects in Solid Oxide Fuel Cell Electrolytes

2003 ◽  
Vol 801 ◽  
Author(s):  
Jeremy Cheng ◽  
Rojana Pornprasertsuk ◽  
Yuji Saito ◽  
Fritz B. Prinz
Keyword(s):  
Ion Irradiation ◽  
Depth Profiling ◽  
Surface Conductance ◽  
Dislocation Network ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Saturation Point ◽  
X Ray ◽  
Cell Electrolytes ◽  
Fuel Cell Electrolytes

ABSTRACTSingle crystal Ytrria-stabilized Zirconia was irradiated with Xe2+ and Xe3+ ions at 320 and 450 keV over a range of doses from 1013 to 1016 ions/cm2. Damage appears as a 150 nm surface layer with a dense dislocation network. The X-ray diffraction pattern shows an increasing lattice expansion with increasing dose that reaches a saturation point. Ion irradiation increases the surface conductance of the material; this effect is removed with certain post-treatments. Preliminary isotope depth profiling indicates enhanced ion diffusion in the damaged layer.

Morphology and orientation of thin poly(3-hexylthiophene) (P3HT) films on differently silanized silicon oxide

e-Polymers ◽  
2009 ◽  
Vol 9 (1) ◽  
Author(s):  
Guido Scavia ◽  
William Porzio ◽  
Silvia Destri ◽  
Alberto Giacometti Schieroni ◽  
Fabio Bertini
Keyword(s):  
Annealing Temperature ◽  
Silicon Oxide ◽  
Alkyl Chain ◽  
Alkyl Chain Length ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Xrd Techniques

AbstractThe morphology and structure of the overlying poly(3-hexylthiophene) (P3HT) layer onto differently silanized silicon oxide has been studied by Atomic Force Microscopy (AFM) and X-Ray Diffraction (XRD) techniques. By increasing the silanizer alkyl chain length, the layer morphology evolves from a filament like to globular needle like as a consequence of the different SAM organization, while the P3HT conformation remains edge-on. For each case the effect of the annealing temperature has been studied. For all the cases a particular attention has been paid to the first thin layers close to the interface P3HT/SiOx. The effect of a polar substituent and presence of aromatic ring has been also studied.

Orientational Transition of Liquid Crystal Molecules by a Photoinduced Transformation Process into a Recovery-free Silicon Oxide Layer

2008 ◽  
Vol 20 (16) ◽  
pp. 3073-3078 ◽  
Author(s):  
Jong Bok Kim ◽  
Chu Ji Choi ◽  
Jin Seol Park ◽  
Sung Jin Jo ◽  
Byoung Har Hwang ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Oxide Layer ◽  
Silicon Oxide ◽  
Transformation Process ◽  
Silicon Oxide Layer ◽  
Orientational Transition ◽  
Free Silicon ◽  
Photoinduced Transformation
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