Heteroepitaxy of Si, Ge, and GaAs Films on CaF2/Si Structures

1986 ◽  
Vol 67 ◽  
Author(s):  
H. Ishiwara ◽  
T. Asano ◽  
H. C. Lee ◽  
Y. Kuriyama ◽  
K. Seki ◽  
...  
Keyword(s):  
Smooth Surface ◽  
Field Effect Transistors ◽  
Growth Parameters ◽  
Growth Conditions ◽  
Heteroepitaxial Growth ◽  
Gate Electrodes ◽  
Gaas Films ◽  
Temperature And Growth ◽  
Si Films

ABSTRACTRecent progress in the research of heteroepitaxial growth of Si, Ge, and GaAs films on CaF2/Si structures is reviewed. Growth conditions and material properties of the Si/CaF2/Si structures are first discussed. It is shown that such growth techniques as the predeposition technique and the recrystallization method are useful to improve the crystalline quality of Si films on the CaF2/Si structures. Then, device application of the Si/CaF2/Si structure to field effect transistors with epitaxial MIS (metal-insulatorsemiconductor) gate electrodes is described. Finally, epitaxial growth of Ge and GaAs films on the CaF2/Si structure are discussed, in which such growth parameters as the substrate temperature and growth rate are optimized to obtain high-quality films with excellent crystallinity and smooth surface.

Heteroepitaxial growth and characterization of Ge and SiXGe1−X films on patterned silicon structures

2004 ◽  
Vol 809 ◽  
Author(s):  
Ganesh Vanamu ◽  
Abhaya K. Datye ◽  
Saleem H. Zaidi
Keyword(s):  
Electron Microscopy ◽  
Cross Sections ◽  
Growth Parameters ◽  
Buffer System ◽  
Heteroepitaxial Growth ◽  
Optimum Configuration ◽  
Transmission Electron ◽  
Silicon Structures ◽  
Heteroepitaxial Layers

ABSTRACTWe describe novel 2-D structures that facilitate strain relief and allow us to obtain Ge epilayers that are free of defects. These structures can potentially absorb thermal expansion and lattice expansion mismatch as well as enable liftoff of heteroepitaxial layers for subsequent wafer reuse. Conventional lithography techniques were combined with reactive ion and wet-chemical etching to fabricate 2-D patterns of silicon posts. The dimensions of the posts were varied keeping the pitch (center to center distance) constant. Heteroepitaxial growth of Ge/SixGe1−x on these micrometer-scale structures was investigated. While, keeping the growth parameters constant, the geometry of the structures was varied to determine the optimum configuration for the highest quality heteroepitaxial growth. The quality of the Si1−xGex buffer system was investigated using high-resolution x-ray diffraction. Transmission electron microscopy (TEM) was used to analyze the epilayer cross-sections. Surface morphology was analyzed using scanning electron microscopy (SEM), atomic force microscopy (AFM) and optical microscopy. Our results show that the quality of the heteroepitaxial layers improves as the width of the posts in the 2-D pattern was decreased.

Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect

2015 ◽  
Vol 821-823 ◽  
pp. 978-981 ◽  
Author(s):  
Rami Khazaka ◽  
Marc Portail ◽  
P. Vennéguès ◽  
Marcin Zielinski ◽  
Thierry Chassagne ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Annealing Process ◽  
Antiphase Boundaries ◽  
Silicon Growth ◽  
Si Films ◽  
The Impact ◽  
Subsequent Thermal Annealing

We evaluate the influence of the growth parameters on the crystal quality of Si films grown by chemical vapor deposition on 3C-SiC(001)/Si (001) epilayers. It is shown that the pressure plays a major role on the final quality of the films, with two distinct growth regimes. The defects in the films were found to be antiphase boundaries and μ-twins. The influence of the growth parameters as well as the 3CSiC structural properties on these defects are discussed. The impact of a subsequent thermal annealing, under different gas environments, is also investigated and reveals some noticeable differences according to the gas environment used in the annealing process.

Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality

2016 ◽  
Vol 858 ◽  
pp. 201-204 ◽  
Author(s):  
Tatsuya Masuda ◽  
Akira Miyasaka ◽  
Jun Norimatsu ◽  
Yutaka Tajima ◽  
Daisuke Muto ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Smooth Surface ◽  
Growth Conditions ◽  
Power Device ◽  
Good Balance ◽  
High Uniformity ◽  
Sic Wafer

For the popularization of SiC power device, improvement on both productivity and quality of 150 mm diameter SiC epitaxial wafer is inevitable. With highly productive 8x150-mm CVD reactor, we have grown epitaxial layer on 4° off 4H-SiC wafer Si-and C-face. Modifying some reactor parts and optimizing growth conditions enabled us to achieve a good balance between high uniformity and smooth surface.

Growth Conditions of Erbium-Oxygen-Doped Silicon Grown by MBE

1996 ◽  
Vol 422 ◽  
Author(s):  
J. Stimmer ◽  
A. Reittinger ◽  
G. Abstreiter ◽  
H. Holzbrecher ◽  
Ch. Buchal
Keyword(s):  
Molecular Beam Epitaxy ◽  
Systematic Study ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Light Emitting Diode ◽  
Growth Conditions ◽  
Light Emitting ◽  
Doped Silicon

AbstractWe report on a systematic study of the growth parameters of erbium-oxygen-doped silicon grown by molecular beam epitaxy. The surface quality of the grown layers was measured in situ by RHEED. The samples were characterized by photoluminescence measurements and SIMS. An Er-O-doped Si light emitting diode grown with the optimized parameters is presented.

Layered Structures Composed of Si, Ge, GaAs, and Fluorides

1987 ◽  
Vol 102 ◽  
Author(s):  
H. Ishiwara ◽  
T. Asano ◽  
K. Tsutsui ◽  
H. C. Lee ◽  
S. Furukawa
Keyword(s):  
Electron Beam ◽  
Alkaline Earth ◽  
Room Temperature ◽  
Recent Progress ◽  
Layered Structures ◽  
Semiconductor Films ◽  
Heteroepitaxial Growth ◽  
Gaas Films ◽  
Generation Mechanisms ◽  
Si Films

ABSTRACTRecent progress in the heteroepitaxial growth of layered structures of Si, Ge, GaAs, and alkaline earth fluorides is reviewed. Effectiveness of the predeposition technique, in which a thin Si layer is deposited on the CaF2 surface at room temperature prior to the growth of a thick Si film at 800°C, is shown for the growth of Si films on CaF2/Si structures. In case of the overgrowth of Ge and GaAs films on (111) substrates, modification of the fluoride surface by electron beam exposure is effective to increase the wettability between fluoride and semiconductor films and to improve the crystallinity and surface morphology of the films. Finally, antiphase disorder in the GaAs(l00) films grown on fluorides is experimentally studied and the generation mechanisms are discussed.

Epitaxial Silicide Formation by Scanning Electron Beam Annealing

1981 ◽  
Vol 4 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Hiroshi Yamamoto
Keyword(s):  
Electron Beam ◽  
Finite Thickness ◽  
Beam Current ◽  
Growth Conditions ◽  
Silicide Formation ◽  
Nonlinear Heat Conduction ◽  
Nonlinear Heat Conduction Equation ◽  
Scan Speed ◽  
Si Films

ABSTRACTEpitaxial growth of Pd2Si films on Si(lll) substrates by scanning cw electron beam annealing is investigated theoretically and experimentally. First, the nonlinear heat conduction equation is solved in a substrate with finite thickness to estimate the surface temperature during annealing. Then, the optimum growth conditions are experimentally determined, in which annealing parameters such as the beam current intensity, the scan speed, and the overlap width are changed. It has been shown by Rutherford backscattering and channeling techniques that the crystalline quality of the e-beam annealed Pd2Si films is somewhat worse than that of the furnace-annealed films.

Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs

2015 ◽  
Vol 1736 ◽  
Author(s):  
Y. Kozuka ◽  
K. Ikeyama ◽  
T. Yasuda ◽  
T. Takeuchi ◽  
S. Kamiyama ◽  
...  
Keyword(s):  
Smooth Surface ◽  
Growth Parameters ◽  
Mixing Time ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Smooth Surfaces ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Movpe Growth

ABSTRACTWe investigated MOVPE growth conditions for AlInN layers with high growth rates and obtained 0.5µm/h with smooth surfaces. We found that short gas mixing time, relatively high growth temperature, and very low In/Al supply ratio were key growth parameters in order to obtain the AlInN layers with high growth rate and smooth surface simultaneously. AlInN/GaN DBRs grown under such growth conditions showed smooth surfaces and a reflectivity of over 99%.

scholarly journals Oxide Self-Flux in Optical Floating Zone Crystal Growth of Nickel Niobate (NiNb2O6)

2017 ◽  
Author(s):  
Timothy J. S. Munsie ◽  
Anna Millington ◽  
Graeme M. Luke ◽  
Hanna A. Dabkowska
Keyword(s):  
Phase Diagram ◽  
Crystal Growth ◽  
Melting Temperature ◽  
Niobium Oxide ◽  
Growth Parameters ◽  
Growth Conditions ◽  
Floating Zone ◽  
Liquid Zone ◽  
Small Excess

Growing crystals of nickel niobate (NiNb2O6), we noticed that changing growth conditions allowed our material to enter different areas of the phase diagram. In particular, we found that excess material accumulated within and above the liquid zone. Analysis showed that this was an unincorporated constituent. Changing the ratio of the constituent oxides - an excess of ~4% of either NiO or Nb2O5 gave us the opportunity to investigate changes in zone stability, melting temperature and quality of the resulting crystal. We found that a small excess of nickel oxide decreases the melting temperature significantly, and created the best pseudo-rutile NiNb2O6 crystal studied, while higher amounts of niobium oxide allowed us to stabilize the NiNb2O6 columbite phase. This research reinforces the idea that self-flux as a travelling solvent can significantly impact crystal growth parameters and quality.

EuTe/PbTe Superlattices: Mbe Growth and Optical Characterization

1993 ◽  
Vol 301 ◽  
Author(s):  
G. Springholz ◽  
Shu Yuan ◽  
G. Bauer ◽  
M. Kriechbaum ◽  
H. Krenn
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Growth Parameters ◽  
Energy Levels ◽  
Wide Band ◽  
Growth Conditions ◽  
High Energy ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Mbe Growth

ABSTRACTThe heteroepitaxial growth of EuTe on PbTe (111) by molecular beam epitaxy (MBE) was investigated using in situ reflection high energy electron diffraction (RHEED). As a function of substrate temperature and Te2 flux rate, the resulting EuTe (111) surfaces exhibit several different surface reconstructions corresponding to Te-stabilized or Eu-stabilized surfaces. The Eustabilized surface shows a (2√3 × 2√3)R30° surface reconstruction. Because of the strain induced tendency for 3D islanding, only in a narrow window of MBE growth parameters perfect 2D layer-by-layer heteroepitaxial growth exists. Using such optimized MBE growth conditions, we have fabricated a series of PbTe/EuTe superlattices. In such superlattices the wide band gap EuTe layers act as barriers and the narrow band gap PbTe as quantum wells. The superlattices were investigated by high resolution x-ray diffraction, showing their high structural perfection. Modulated low temperature Fourier transform infrared reflection measurements were performed in order to determine the confined energy levels in the PbTe quantum wells. The measurements indicate that mini-subbands are formed in the PbTe quantum wells with a mini-band width of 22 meV in agreement with envelope function calculations.

scholarly journals Atmospheric Pressure Catalytic Vapor Deposition of Graphene on Liquid In and Cu-In Alloy Substrates

Catalysts ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1318
Author(s):  
Maryam A. Saeed ◽  
Ian A. Kinloch ◽  
Brian Derby
Keyword(s):  
Atmospheric Pressure ◽  
Defect Density ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Growth Conditions ◽  
Growth Time ◽  
Graphene Growth ◽  
Graphene Films ◽  
Reactive Gases

Liquid substrates are great candidates for the growth of high-quality graphene using chemical vapour deposition (CVD) due to their atomically flat and defect free surfaces. A detailed study of graphene growth using atmospheric pressure CVD (APCVD) on liquid indium (In) was conducted. It was found that the effect of the growth parameters on the quality of the graphene produced is highly dependent on the properties of the substrate used. A short residence time of 6.8 sec for the reactive gases led to a high graphene quality, indicating the good catalytic behaviour of In. The role of hydrogen partial pressure was found to be crucial, with monolayer and bilayer graphene films with a low defect density obtained at low PH2 (38.6 mbar), whilst more defective, thicker graphene films with a partial coverage being obtained at high PH2 (74.3 mbar). The graphene deposition was insensitive to growth time as the graphene growth on liquid In was found to self-limit to bilayer. For further investigation, five compositions of Cu-In alloys were made by arc-melting. Graphene was then grown using the optimum conditions for In and the quality of the graphene was found to degrade with increasing Cu wt.%. This work will aid the future optimisation of the growth conditions based upon the substrate’s properties.

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