Epitaxial Silicide Formation by Scanning Electron Beam Annealing

1981 ◽  
Vol 4 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Hiroshi Yamamoto
Keyword(s):  
Electron Beam ◽  
Finite Thickness ◽  
Beam Current ◽  
Growth Conditions ◽  
Silicide Formation ◽  
Nonlinear Heat Conduction ◽  
Nonlinear Heat Conduction Equation ◽  
Scan Speed ◽  
Si Films

ABSTRACTEpitaxial growth of Pd2Si films on Si(lll) substrates by scanning cw electron beam annealing is investigated theoretically and experimentally. First, the nonlinear heat conduction equation is solved in a substrate with finite thickness to estimate the surface temperature during annealing. Then, the optimum growth conditions are experimentally determined, in which annealing parameters such as the beam current intensity, the scan speed, and the overlap width are changed. It has been shown by Rutherford backscattering and channeling techniques that the crystalline quality of the e-beam annealed Pd2Si films is somewhat worse than that of the furnace-annealed films.

Heteroepitaxy of Si, Ge, and GaAs Films on CaF2/Si Structures

1986 ◽  
Vol 67 ◽  
Author(s):  
H. Ishiwara ◽  
T. Asano ◽  
H. C. Lee ◽  
Y. Kuriyama ◽  
K. Seki ◽  
...  
Keyword(s):  
Smooth Surface ◽  
Field Effect Transistors ◽  
Growth Parameters ◽  
Growth Conditions ◽  
Heteroepitaxial Growth ◽  
Gate Electrodes ◽  
Gaas Films ◽  
Temperature And Growth ◽  
Si Films

ABSTRACTRecent progress in the research of heteroepitaxial growth of Si, Ge, and GaAs films on CaF2/Si structures is reviewed. Growth conditions and material properties of the Si/CaF2/Si structures are first discussed. It is shown that such growth techniques as the predeposition technique and the recrystallization method are useful to improve the crystalline quality of Si films on the CaF2/Si structures. Then, device application of the Si/CaF2/Si structure to field effect transistors with epitaxial MIS (metal-insulatorsemiconductor) gate electrodes is described. Finally, epitaxial growth of Ge and GaAs films on the CaF2/Si structure are discussed, in which such growth parameters as the substrate temperature and growth rate are optimized to obtain high-quality films with excellent crystallinity and smooth surface.

The Design of Computer Integrated Control System for Electron Beam Welder

2013 ◽  
Vol 380-384 ◽  
pp. 274-277 ◽  
Author(s):  
Han Min Ye ◽  
Xiao Fei Liu
Keyword(s):  
Electron Beam ◽  
Control System ◽  
Integrated Control ◽  
Welding Process ◽  
Beam Current ◽  
Electron Beam Current ◽  
Control Technology ◽  
Computer Communication ◽  
Plc Control

Based on computer and PLC control technology, the control system for electron beam welder has been studied in this paper. By using PLC control technology to implement the intelligent control (IC) in welding process and adopting the high-frequency inverter technology, to realize the high-voltage interlock protection, the quality of electron beam current spot as well as the welding technology has been improved. Concerning the requirements on the technical and process, the design of computer communication and PLC application software demonstrate the feasibility of this method.

scholarly journals Evaluation of Support Structure Removability for Additively Manufactured Ti6Al4V Overhangs via Electron Beam Melting

Metals ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1211 ◽  
Author(s):  
Wadea Ameen ◽  
Muneer Khan Mohammed ◽  
Abdulrahman Al-Ahmari
Keyword(s):  
Electron Beam ◽  
Additive Manufacturing ◽  
Process Parameters ◽  
Electron Beam Melting ◽  
Beam Current ◽  
Design Parameters ◽  
Support Structures ◽  
Support Design ◽  
Removal Time ◽  
Scan Speed

The addition of support structures is essential for the successful fabrication of overhang structures through additive manufacturing (AM). The support structures protect the overhang portion from distortions. They are fabricated with the functional parts and are removed later after the fabrication of the AM part. While structures bearing insufficient support result in defective overhangs, structures with excessive support result in higher material consumption, time and higher post-processing costs. The objective of this study is to investigate the effects of design and process parameters of support structures on support removability during the electron beam melting (EBM)-based additive manufacturing of the Ti6Al4V overhang part. The support design parameters include tooth parameters, no support offset, fragmentation parameters and perforation parameters. The EBM process parameters consist of beam current, beam scan speed and beam focus offset. The results show that both support design and process parameters have a significant effect on support removability. In addition, with the appropriate selection of design and process parameters, it is possible to significantly reduce the support removal time and protect the surface quality of the part.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

Cathodoluminescence of SiO2/Si System

2009 ◽  
Vol 156-158 ◽  
pp. 487-492 ◽  
Author(s):  
M.V. Zamoryanskaya
Keyword(s):  
Activation Energy ◽  
Electron Beam ◽  
Rise Time ◽  
Silicon Oxide ◽  
Beam Current ◽  
Electron Beam Current ◽  
Electron Traps ◽  
Definition Of ◽  
Luminescent Centers

In this paper the new method for determination of luminescent centers concentration are discussed. While the possibility of electron traps determination and definition of its activation energy are suggested. The cathodoluminescent (CL) method was used. The determination of luminescent centers concentration in silicon oxide is based on the measurements of dependences of CL intensity on electron beam current. The presence and energy of activation of electron traps were studied by measurement of rise time and decay of luminescent band during the stationary irradiation of silica by electron beam.

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