Channeling Studies of CeO2 and Ce1-xZrxO2 Films on Yttria-Stabilized ZrO2(111)

2000 ◽  
Vol 654 ◽  
Author(s):  
V. Shutthanandan ◽  
S. Thevuthasan ◽  
Y. J. Kim ◽  
C.H.F. Peden
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Interfacial Properties ◽  
Rutherford Backscattering ◽  
Crystalline Quality ◽  
High Crystalline Quality ◽  
Yield Curves ◽  
Minimum Yield

AbstractRutherford backscattering spectrometry and channeling techniques have been used to investigate the crystalline quality and interfacial properties of epitaxially grown CeO2 and Ce0.7Zr0.3O2 films on yttria-stabilized ZrO2(111) substrates. Both films appear to have high crystalline quality with minimum yield of Ce in the CeO2and Ce0.7Zr0.3O2 films determined to be 4.7% and 12.1% respectively. Visibility of more Ce atoms to the ion beam at the interface compared to the bulk of the film indicates that both films show significant disorder at the interface. The normalized angular yield curves obtained from Ce and Zr indicate that the Ce atomic rows in the CeO2 film are parallel to the Zr atomic rows in the substrates. Approximately 88% of the Zr atoms substitutionally occupy the Ce cation lattice sites in the Ce0.7Zr0.3O2 film.

Ion-beam-assisted molecular-beam epitaxy: a method to deposit gallium nitride films with high crystalline quality

2004 ◽  
Vol 458 (1-2) ◽  
pp. 63-66 ◽  
Author(s):  
S. Sienz ◽  
J.W. Gerlach ◽  
T. Höche ◽  
A. Sidorenko ◽  
B. Rauschenbach
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Crystalline Quality ◽  
High Crystalline Quality

scholarly journals Ion Beam-Induced Changes in Optical Properties of MgO

1995 ◽  
Vol 396 ◽  
Author(s):  
Ying Qian ◽  
D. Ila ◽  
K. X. He ◽  
M. Curley ◽  
D. B. Poker ◽  
...  
Keyword(s):  
Optical Properties ◽  
Single Crystals ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Sample Characterization ◽  
Ag Clusters ◽  
Induced Changes ◽  
Optical Spectrophotometry

AbstractThe implantation of Ag into MgO (100) single crystals, followed by thermal annealing at 1100°C, leads to dramatic changes in their optical properties. The changes in the optical properties are due to the presence of small Ag clusters which are formed in the annealed samples. The small Ag clusters are obtained by thermal annealing of the implanted MgO crystals between 600°C and 1100°C to investigate the changes in cluster sizes and to correlate with changes in their optical properties. Sample characterization is carried out using optical spectrophotometry to confirm the effective presence of Ag clusters and Rutherford Backscattering Spectrometry (RBS) to study the profile of Ag clusters.

Ion-Beam Synthesis of Buried Yttrium Silicide

1989 ◽  
Vol 157 ◽  
Author(s):  
T.L. Alford ◽  
J.C. Barbour
Keyword(s):  
Single Crystal ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
High Fluence ◽  
Uniform Thickness ◽  
Double Crystal ◽  
X Ray ◽  
Continuous Layer ◽  
Double Crystal Diffractometer

ABSTRACTBuried single-crystal YSi1.7 layers have been synthesized using high fluence implants of 330 keV yttrium ions into (111) Si held at 450°C followed by post-implant anneals of 1000°C . Rutherford backscattering spectrometry showed that an implant fluence of 3.6 X 1017 Y/cm2 forms a continuous layer of uniform thickness. Whereas, implant fluences of 1 — 2 x 1017 Y/cm2 form a thin continuous YSi1.7 layer with what are believed to be Y-silicide precipitates above and below the YSi1.7 layer. Strains resulting from the YSi1-7 layers were evaluated from x-ray rocking curves using a double crystal diffractometer.

Study of Elemental Depth Distribution in the Multilayer Material \(\text{TiO}_2\)/\(\text{SiO}_2\)/Si by Rutherford Backscattering Spectrometry (RBS)

2019 ◽  
Vol 29 (3SI) ◽  
pp. 393
Author(s):  
T. V. Phuc ◽  
M. Kulik ◽  
A. P. Kobzev ◽  
L. H. Khiem
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Multilayer Structures ◽  
Multilayer Material ◽  
Transition Layers ◽  
Before And After ◽  
Elemental Depth ◽  
Irradiation Process

In this study we investigated depth distributions of elements in the multilayer structures of TiO\(_2\)/SiO\(_2\)/Si before and after ion irradiation. The samples were implanted with Ne\(^+\), Ar\(^+\), Kr\(^+\) and Xe\(^+\) ions. For each implantation the multilayer structures were irradiated by the ions with the energy 100, 150, 200 and 250 keV. The elemental concentrations in the samples were analyzed by the Rutherford Backscattering Spectrometry (RBS) method. It was found that the transition layers existed between the TiO\(_2\) and SiO\(_2\) layers. Formation of these layers derived from the ion beam mixing that was occurred at TiO\(_2\)/SiO\(_2\) interface after irradiation process. The depth profiles show that thickness of the transition layers increased with the growing energy and atomic mass of the implanted ions.

Evaluation of Crystalline Quality of Zirconium Dioxide Films on Silicon by Means of Ion Beam Channeling

1988 ◽  
Vol 116 ◽  
Author(s):  
Yoshiki Nishibayashi ◽  
Takeshi Imura ◽  
Yukio Osaka ◽  
Hirofumi Fukumoto
Keyword(s):  
Angular Dependence ◽  
Energy Dependence ◽  
Epitaxial Layer ◽  
Zirconium Dioxide ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Vacuum Evaporation ◽  
Crystalline Quality ◽  
Crystallite Orientation

AbstractZirconium dioxide (ZrO2) films are deposited on Si(100) and Si(lll) substrates at 800ºC by vacuum evaporation. Channeling spectrum of the Rutherford backscattering shows that ZrO2 films (tetragonal(200)) are epitaxially grown on the Si(100) substrate. The fluctuation of crystallite orientation in the epitaxial layer is estimated to be 0.32º, by analyzing the angular dependence of the aligned and random backscattering spectra. Energy dependence of dechanneling factors in 0.3—2.0 MeV 4He+ indicates that the dominant defect arises from the stackingfaults.

Ion beam mixing study on Cu/Al2O3 bilayer samples using Rutherford backscattering spectrometry

1994 ◽  
Vol 9 (2) ◽  
pp. 406-409 ◽  
Author(s):  
A.G. Balogh ◽  
M-P. Macht ◽  
V. Naundorf
Keyword(s):  
Vapor Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Mixing Efficiency ◽  
Fusion Reactors ◽  
Ion Beam Mixing ◽  
Depth Profiles ◽  
Cu Alloys ◽  
Concentration Depth Profiles

Cu/Al2O3 bilayer samples were produced by vapor deposition and irradiated successively with 150 keV Ar ions up to a dose of 500 dpa. Ion beam mixing effects were studied by 2 Me V He+ Rutherford backscattering spectroscopy (RBS). Concentration depth profiles show the mixing of Cu, Al, and O atoms in the sample. Because of the low mixing efficiency found in this study, Al2O3-dispersion strengthened Cu alloys seem to be good candidates as structural materials in fusion reactors.

Stoichiometric Determination of Graphite Intercalation Compounds Using Rutherford Backscatiering Spectrometry

1983 ◽  
Vol 27 ◽  
Author(s):  
L. Salamanca-Riba ◽  
B.S. Elman ◽  
M.S. Dresselhaus ◽  
T. Venkatesan
Keyword(s):  
Experimental Error ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Intercalation Compounds ◽  
Graphite Intercalation Compounds ◽  
X Ray ◽  
Donor And Acceptor ◽  
Graphite Intercalation ◽  
Non Destructive

ABSTRACTRutherford backscattering spectrometry (RBS) is used to characterize the stoichiometry of graphite intercalation compounds (GIC). Specific application is made to several stages of different donor and acceptor compounds and to commensurate and incommensurate intercalants. A deviation from the theoretical stoichiometry is measured for most of the compounds using this non-destructive method. Within experimental error, the RBS results agree with those obtained from analysis of the (00ℓ) x-ray diffractograms and weight uptake measurements on the same samples.

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