Radiation Effects in Radwaste Glasses : A Reappraisal of Alpha-Recoil Aging as Simulated by Ion Implantation.

1981 ◽  
Vol 6 ◽  
Author(s):  
J.C. Dran ◽  
Y. Langevin ◽  
M. Maurette ◽  
J.C. Petit
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Radiation Damage ◽  
Radiation Effects ◽  
Chemical Reactivity ◽  
Monte Carlo Model ◽  
Silicate Glasses

ABSTRACTNew results on the etchability of lead implanted silicate glasses are presented which are satisfactorily accounted for by a Monte Carlo Model of etching. These results strongly support the radiation damage origin of the ion-induced modification of the chemical reactivity of glass. Major artefacts of ion implantation are then discarded as possible causes of the observed effects and consequently this technique is shown to be a valuable tool for the study of α-recoil aging in H.L.W. glasses.

scholarly journals Electrode level Monte Carlo model of radiation damage effects on astronomical CCDs

2011 ◽  
Vol 414 (3) ◽  
pp. 2215-2228 ◽  
Author(s):  
T. Prod’homme ◽  
A. G. A. Brown ◽  
L. Lindegren ◽  
A. D. T. Short ◽  
S. W. Brown
Keyword(s):  
Monte Carlo ◽  
Radiation Damage ◽  
Monte Carlo Model

Radiatio Damaae Growth Models for the Interpretation of Radiation Effects on Nuclear Waste Form Leaching

1983 ◽  
Vol 26 ◽  
Author(s):  
A. M. Ougouag ◽  
A. J. Machiels
Keyword(s):  
Free Surface ◽  
Ion Implantation ◽  
Radiation Damage ◽  
Nuclear Waste ◽  
Radiation Effects ◽  
Growth Models ◽  
Waste Form ◽  
Damage Growth ◽  
Kinetics Of ◽  
Existing Data

ABSTRACTTwo approaches for modeling radiation damage growth are presented and evaluated in the light of existing data. It results that purely geometric and statistical considerations about the distribution and overlap of damage are insufficient for accounting for the differences observed in leaching data from ion implantation and actinide doping experiments. It is shown, however, that the incorporation of effects such as those induced by the proximity of a free surface and the directionality of the irradiation into the kinetics of radiation damage ingrowth has the capability for accounting for the differences.

Monte Carlo model for describing charge transfer in irradiated CCDs

1998 ◽  
Author(s):  
Dennis J. Gallagher ◽  
Raymond Demara ◽  
Gary Emerson ◽  
Wayne W. Frame ◽  
Alan W. Delamere
Keyword(s):  
Monte Carlo ◽  
Charge Transfer ◽  
Monte Carlo Model

Monte Carlo model of multi-site adsorption

1985 ◽  
Vol 8 (7) ◽  
pp. 364-365 ◽  
Author(s):  
J. Sedláček ◽  
L. Nondek
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Model
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