scholarly journals Characterisation of radiation damage in silicon photomultipliers with a Monte Carlo model

Author(s):  
S. Sánchez Majos ◽  
P. Achenbach ◽  
J. Pochodzalla
2011 ◽  
Vol 414 (3) ◽  
pp. 2215-2228 ◽  
Author(s):  
T. Prod’homme ◽  
A. G. A. Brown ◽  
L. Lindegren ◽  
A. D. T. Short ◽  
S. W. Brown

1981 ◽  
Vol 6 ◽  
Author(s):  
J.C. Dran ◽  
Y. Langevin ◽  
M. Maurette ◽  
J.C. Petit

ABSTRACTNew results on the etchability of lead implanted silicate glasses are presented which are satisfactorily accounted for by a Monte Carlo Model of etching. These results strongly support the radiation damage origin of the ion-induced modification of the chemical reactivity of glass. Major artefacts of ion implantation are then discarded as possible causes of the observed effects and consequently this technique is shown to be a valuable tool for the study of α-recoil aging in H.L.W. glasses.


1998 ◽  
Author(s):  
Dennis J. Gallagher ◽  
Raymond Demara ◽  
Gary Emerson ◽  
Wayne W. Frame ◽  
Alan W. Delamere

1985 ◽  
Vol 8 (7) ◽  
pp. 364-365 ◽  
Author(s):  
J. Sedláček ◽  
L. Nondek

1995 ◽  
Vol 52 (1) ◽  
pp. 362-373 ◽  
Author(s):  
N. S. Amelin ◽  
H. Stöcker ◽  
W. Greiner ◽  
N. Armesto ◽  
M. A. Braun ◽  
...  

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