Heteroepitaxial Growth of Ir/ZrN Layered Electrode on (100)Si Substrate for Ferroelectric Capacitor

1999 ◽  
Vol 596 ◽  
Author(s):  
Sadayoshi Horii ◽  
Seiji Yokoyama ◽  
Susumu Horita
Keyword(s):  
Coercive Field ◽  
Pulse Train ◽  
Remanent Polarization ◽  
Bipolar Pulse ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Ferroelectric Capacitor ◽  
Substrate Structure ◽  
Pzt Film ◽  
Polarization Electric Field

AbstractAn Ir film was grown heteroepitaxially on the epitaxial (100)ZrN film deposited on the (100)Si substrate by sputtering. Further, we obtained a heteroepitaxial (001)PZT film on the epitaxial (100)Ir/(100)ZrN/(100)Si substrate structure by reactive sputtering. The crystallographic relationship was cube-on-cube. The polarization-electric field hysteresis loop of the 300-nm-thick epitaxial PZT film with a top electrode of IrO2 showed a saturated square shape at an ac amplitude of 5V, and the remanent polarization, 2Pr, and coercive field, 2Ec, were 60 μC/cm 2 and 80 kV/cm, respectively. The Pr was not reduced up to 5×1010 switching cycles with a ±10 V bipolar pulse train. The leakage current of the PZT film at +5 V and –5 V was about 8.0× 10−8 and 2.5 ×10−7 A/cm2, respectively.

Heteroepitaxial Growth of PZT Film on (100)Ir/(100)YSZ/(100)Si Substrate Structure Prepared by Reactive Sputtering

1998 ◽  
Vol 541 ◽  
Author(s):  
Susumu Horita ◽  
Sadayoshi Horii
Keyword(s):  
Photoelectron Spectroscopy ◽  
Reactive Sputtering ◽  
High Energy ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Structure ◽  
Pzt Film ◽  
Polarization Electric Field ◽  
Diffraction Patterns

AbstractA heteroepitaxial (001)Pb(ZrxTi1−x)O3(PZT) film was grown on the (100)Ir/(100)YSZ/Si structure with a cube-on-cube relationship by using reactive sputtering. The X-ray diffraction patterns of this sample showed that the double domain crystal layer of the (110) IrO2 was formed between the Ir and PZT films. According to reflection high energy electron diffraction observation and X-ray photoelectron spectroscopy measurements, it was found that the initial epitaxial growth of the PZT film occurred on the Ir film. The polarization-electric field hysteresis loop of the 285-nm-thick epitaxial PZT film with the top electrode of IrO2 showed a saturated square shape at the ac amplitude of 3V, and the remanent polarization 2Pr and the coercive field 2Ec were 80 µC/cm 2 and 100 kV/cm, respectively. The 2Pr's were not reduced up to the switching cycles of 5 × 1010 with ± 5V bipolar pulse.

Ferroelectric Properties of Bi4-xYbxTi3O12 Thin Films

2013 ◽  
Vol 591 ◽  
pp. 216-219
Author(s):  
Chong Qing Huang ◽  
X.A. Mei ◽  
M. Chen ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Marked Improvement ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Si Substrate

Yb-doped bismuth titanate and random oriented Bi4-xYbxTi3O12 (BYbT) thin films were fabricated on Pt/Ti/SiO2/Si substrate with pulsed laser deposition method. The structures and ferroelectric properties of the BYbT films were investigated. Yb doping resulted in a marked improvement in remanent polarization (Pr) and coercive field (Ec). At an applied electric field of 120kV/cm, the Pr and (Ec) of the BYbT (x=0.8) films annealed at 650°C were 20 μC/cm2 and 85 KV/cm, respectively.

Preparation of CaBi4Ti4O15 Based Thick Films on Si Substrates by Screen Printing

2009 ◽  
Vol 421-422 ◽  
pp. 50-53
Author(s):  
Tatsunori Kakuda ◽  
Tomoaki Futakuchi ◽  
Tsutomu Obata ◽  
Yuichi Sakai ◽  
Masatoshi Adachi
Keyword(s):  
Coercive Field ◽  
Screen Printing ◽  
Remanent Polarization ◽  
Thick Films ◽  
Si Substrate ◽  
Screen Printing Method ◽  
Si Substrates ◽  
Roll Mill ◽  
Cavity Structure ◽  
Printing Method

CaBi4Ti4O15 based thick films were prepared by screen-printing method on Si substrates. Screen-printable pastes were prepared by kneading the CaBi4Ti4O15 powder in a three-roll mill with an organic vehicle. The remanent polarization of 6.3 C/cm2 and coercive field of 130kV/cm were obtained for the CaBi4Ti4O15 with Nb2O5 1wt% thick film fired at 1130°C. The cavity structure was prepared by etching of Si substrate. The displacement-electric field butterfly curves were obtained.

Low-Temperature Heteroepitaxy of β-SiC on Si (111) Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
T. Eshita ◽  
T. Suzuki ◽  
T. Hara ◽  
F. Mieno ◽  
Y. Furumura ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Large Area ◽  
Growth Technique ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Structure ◽  
Sic Films

AbstractWe developed a heteroepitaxial growth technique for large-area β-SiC films on Si substrates without buffer layers at 850ºC and 1000ºC. The substrates were vicinal 4-inch (111) Si wafers. The β-SiC films had smooth surfaces and were crack-free. X-ray diffraction and electron diffraction analysis revealed that the films grown at 1000ºC were single crystals. Satisfactory characteristics were obtained in aMOSFET with a β-SiC/Si02/poly-Si substrate structure. Our evaluations indicate that the β-SiC films were high-quality crystals.

Effect on Crystal Orientation on Residual Stress and Electrical Properties of a PZT Thin Film Deposited on Buffered-Si Substrate

2006 ◽  
Vol 320 ◽  
pp. 65-68
Author(s):  
Keisuke Fujito ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Nobuyasu Mizutani ◽  
Kazuo Shinozaki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Electrical Properties ◽  
Tensile Stress ◽  
Remanent Polarization ◽  
Residual Tensile Stress ◽  
Si Substrate ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

Changes of residual stress and electrical properties were examined in (001)-oriented and (111)-oriented Pb(Zr0.5Ti0.5)O3 (PZT) thin films deposited on a buffered-Si substrate with a buffer and bottom electrode layer of a (La,Sr)CoO3(LSCO). A (001)-epitaxial PZT film was prepared on LSCO/CeO2 /Zr0.85Y0.15O1.93(YSZ)/Si. In addition, a (111)-oriented PZT film was prepared on LSCO/SrTiO3(ST) /Mn0.24Zn0.09Fe2.67O4(MZF)/YSZ/Si. The residual tensile stress in (001)-PZT thin films decreased from 2.92 to 1.98 GPa and the remanent polarization increased from 7.5 to 41.7 @C/cm2 as the LSCO thickness increased. In (111)-PZT, the residual tensile stress decreased from 1.72 to 0.95 GPa and remanent polarization increased from 9.5 to 26.7 @C/cm2. The residual tensile stress of (111)-PZT was less than that of (001)-PZT. The remanent polarization in the 80 nm (111)-PZT was greater than that of the 60 nm (001)-PZT. In the 700-nm-thick PZT, the remanent polarization in (001)-PZT was greater than that in (111)-PZT.

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 THIN FILM ON Pt/Ti/SiO2/Si SUBSTRATE

2010 ◽  
Vol 17 (05n06) ◽  
pp. 445-449 ◽  
Author(s):  
SUHUA FAN ◽  
QUANDE CHE ◽  
FENGQING ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Property ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Si Substrate ◽  
Degree Of Orientation ◽  
Equiaxed Grains

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

PZT Film and Si Substrate Two-Layer System Patterning Morphology by Femtosecond Pulsed Laser

2007 ◽  
Author(s):  
Shizhou Xiao ◽  
Rui Guo ◽  
Guanghua Cheng ◽  
Yalei Wu ◽  
Wenhao Huang ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Energy ◽  
Threshold Model ◽  
Pulsed Laser ◽  
Direct Writing ◽  
Si Substrate ◽  
Layer System ◽  
Substrate Heating ◽  
Pzt Film ◽  
Femtosecond Pulsed Laser

In this paper, a novel PZT film patterning method by femtosecond laser is proposed. The method is different from traditional dry-etching and wet-etching technology. Femtosecond laser microfabrication technology has several advantages such as high resolution, no mask direct-writing and seldom-heating, etc. A two-layer (PZT thin film and substrate) heating and ablating threshold model is built and the relationship of PZT/Si two-layer system micro ablation morphology depending on laser pulse energy is constructed. From the model and experiment data, we obtain the suitable energy region to pattern PZT film freely without damage Si substrate. A 3μm resolution of PZT pattern is achieved in our experiment. In order to verify the fabrication available of this technology, several micro functional devices are successfully patterned by optimized femtosecond pulsed laser energy and their function are detected. The results prove that the PZT patterning quality is good.

Composition Analysis of Ge/Si1-xGex: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy

2011 ◽  
Vol 383-390 ◽  
pp. 7619-7623
Author(s):  
Z Z Lu ◽  
F. Yu ◽  
L. Yu ◽  
L. H. Cheng ◽  
P. Han
Keyword(s):  
Energy Dispersive Spectroscopy ◽  
Chemical Vapor ◽  
Energy Dispersive ◽  
Composition Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Composition Distribution ◽  
X Ray ◽  
Cvd Method ◽  
Substrate Structure

In this work, Si, Ge element composition distribution in Ge /Si1-xGex:C /Si substrate structure has been characterized and modified by planar scanning energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The Ge /Si1-xGex:C /Si substrate samples are grown by chemical vapor deposition (CVD) method. The accuracy of EDS value can be improved by ~ 32%. And the modified EDS results indicate the Ge distribution in the Ge/Si1-xGex:C/Si sub structure.

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