Heteroepitaxial Growth of PZT Film on (100)Ir/(100)YSZ/(100)Si Substrate Structure Prepared by Reactive Sputtering

1998 ◽  
Vol 541 ◽  
Author(s):  
Susumu Horita ◽  
Sadayoshi Horii
Keyword(s):  
Photoelectron Spectroscopy ◽  
Reactive Sputtering ◽  
High Energy ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Structure ◽  
Pzt Film ◽  
Polarization Electric Field ◽  
Diffraction Patterns

AbstractA heteroepitaxial (001)Pb(ZrxTi1−x)O3(PZT) film was grown on the (100)Ir/(100)YSZ/Si structure with a cube-on-cube relationship by using reactive sputtering. The X-ray diffraction patterns of this sample showed that the double domain crystal layer of the (110) IrO2 was formed between the Ir and PZT films. According to reflection high energy electron diffraction observation and X-ray photoelectron spectroscopy measurements, it was found that the initial epitaxial growth of the PZT film occurred on the Ir film. The polarization-electric field hysteresis loop of the 285-nm-thick epitaxial PZT film with the top electrode of IrO2 showed a saturated square shape at the ac amplitude of 3V, and the remanent polarization 2Pr and the coercive field 2Ec were 80 µC/cm 2 and 100 kV/cm, respectively. The 2Pr's were not reduced up to the switching cycles of 5 × 1010 with ± 5V bipolar pulse.

Characterization of X-ray irradiated graphene oxide coatings using X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy

2013 ◽  
Vol 28 (2) ◽  
pp. 68-71 ◽  
Author(s):  
Thomas N. Blanton ◽  
Debasis Majumdar
Keyword(s):  
Atomic Force Microscopy ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
X Ray Diffraction ◽  
Carbon Phase ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

In an effort to study an alternative approach to make graphene from graphene oxide (GO), exposure of GO to high-energy X-ray radiation has been performed. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) have been used to characterize GO before and after irradiation. Results indicate that GO exposed to high-energy radiation is converted to an amorphous carbon phase that is conductive.

Surface Characterization of Carbon-Bearing Magnetite (CBM) and Carbon-Bearing Ni(II)-Ferrite (CBNF)

1994 ◽  
Vol 344 ◽  
Author(s):  
T. Sano ◽  
K. Akanuma ◽  
M. Tsuji ◽  
Y. Tamaura
Keyword(s):  
Photoelectron Spectroscopy ◽  
Spinel Structure ◽  
Surface Characterization ◽  
Carbon Deposition ◽  
X Ray Diffraction ◽  
Xps Spectra ◽  
X Ray ◽  
Oxygen Ions ◽  
Diffraction Patterns

AbstractOxygen-deficient magnetite (ODM; Fe3O4-δ, δ>0) synthesized by reduction of magnetite with H2 at 300°C decomposed CO2 to carbon with an efficiency of nearly 100% at 300°C. In this reaction, two oxygen ions of the CO2 were incorporated into the spinel structure of ODM and carbon was deposited on the surface of ODM with zero valence to form visible particles. The particles of carbon separated from ODM were studied by Raman, energy-dispersive X-ray and wave-dispersive X-ray spectroscopies. The carbon which had been deposited on the ODM was found to be a mixture of graphite and amorphous carbon in at least two levels of crystallization. X-ray photoelectron spectroscopy and X-ray diffraction patterns of the carbon-bearing magnetite (CBM) showed no indication of carbide (Fe3C) or metallic iron (α-Fe) phase formation. In the C 1s XPS spectra of the CBM, no peaks were observed which could be assigned to CO2 or CO. X-ray diffractometry, chemical analysis and TG-MS measurement showed that the carbon-bearing Ni(II)-ferrite (CBNF) (Ni(II)/Fetotal = 0.15) synthesized by the carbon deposition reaction from CO2 with the H2-reduced Ni(II)-ferrite was represented by (Ni0.28Fe2.72O4.00)1-δ (Ni2+06.9Fe2+2.31O3.00)δCτ (δ= 0.27, τ= 0.17). The carbon of the CBNF gave the CIOlayer-like oxide containing some Ni2+ ions.

Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/ GaN Heterostructures

2012 ◽  
Vol 1396 ◽  
Author(s):  
Mohana K. Rajpalke ◽  
Thirumaleshwara N. Bhat ◽  
Basanta Roul ◽  
Mahesh Kumar ◽  
S. B. Krupanidhi
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
High Energy ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Diffraction Patterns ◽  
Molecular Beam Epitaxial Growth

ABSTRACTNonpolar a-plane InN/GaN heterostructures were grown by plasma assisted molecular beam epitaxy. The growth of nonpolar a- plane InN / GaN heterostructures were confirmed by high resolution x-ray diffraction study. Reflection high energy electron diffraction patterns show the reasonably smooth surface of a-plane GaN and island-like growth for nonpolar a-plane InN film, which is further confirmed by scanning electron micrographs. An absorption edge in the optical spectra has the energy of 0.74 eV, showing blueshifts from the fundamental band gap of 0.7 eV. The rectifying behavior of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. The Schottky barrier height (φb) and the ideality factor (η) for the InN/GaN heterostructures found to be 0.58 eV and 2.05 respectively.

CHEMICAL COMPOSITION AND CRYSTALLINE PHASES IN F-DOPED TIN OXIDE FILMS GROWN BY DC REACTIVE SPUTTERING

2001 ◽  
Vol 15 (17n19) ◽  
pp. 634-638 ◽  
Author(s):  
A. MARTEL ◽  
F. CABALLERO-BRIONES ◽  
A. IRIBARREN ◽  
R. CASTRO-RODRÍGUEZ ◽  
P. BARTOLO-PÉREZ ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Molar Fraction ◽  
Reactive Sputtering ◽  
Simultaneous Presence ◽  
X Ray Diffraction ◽  
Structural Variations ◽  
X Ray ◽  
Tin Oxide Films

We study by x-ray diffraction (XRD) the structural variations on a series of SnOx:F films grown by dc reactive sputtering from a metallic tin target in an Ar- O 2-Freon plasma. We found that the films tend to be crystalline when the stoichiometry approaches to that of SnO or SnO 2, being amorphous in between. We fitted the x-ray diffractograms and found that films are composed by a mixture of compounds, i.e. SnO, Sn 3 O 4, Sn 2 O 3 and SnO 2, given by the simultaneous presence of Sn +2 and Sn +4. From the analysis of the deconvoluted areas under the x-ray diffractograms we calculate the Sn +2/ Sn and Sn +4/ Sn molar fraction present in the films. The same calculations are done for the x-ray photoelectron spectroscopy (XPS) results. By applying a combinatory model we fitted the general behavior of SnO x films with different oxygen content versus the Sn +2/ Sn and Sn +4/ Sn molar fraction. Both XRD and XPS results are compared with the theoretical curve, showing a well agreement.

Epitaxial Dy2O3 Thin Films Grown on Ge(100) Substrates by Molecular Beam Epitaxy

2010 ◽  
Vol 1252 ◽  
Author(s):  
Md. Nurul Kabir Bhuiyan ◽  
Mariela Menghini ◽  
Christel Dieker ◽  
Jin Won Seo ◽  
Jean-Pierre Locquet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
High Mobility ◽  
High Energy ◽  
Epitaxial Relationship ◽  
Dysprosium Oxide ◽  
X Ray ◽  
Force Microscopy ◽  
Diffraction Patterns

AbstractDysprosium oxide (Dy2O3) films are grown epitaxially on high mobility Ge(100) substrates by molecular beam epitaxy system. Reflection high energy electron diffraction patterns and X-ray diffraction spectra show that single crystalline cubic Dy2O3 films are formed on Ge(100) substrates. The epitaxial-relationship is identified as Dy2O3 (110)║Ge(100) and Dy2O3 [001]║Ge[011]. Atomic force microscopy results show that the surface of the Dy2O3 film is uniform, flat and smooth with root mean square surface roughness of about 4.6Å. X-ray photoelectron spectroscopy including depth profiles confirms the composition of the films being close to Dy2O3. TEM measurements reveal a sharp, crystalline interface between the oxide and Ge.

HETEROEPITAXIAL GROWTH AND ANNEALING OF γ-AL2O3 THIN FILMS ON SILICON

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4302-4305 ◽  
Author(s):  
LIWEN TAN ◽  
JUN WANG ◽  
QIYUAN WANG ◽  
YUANHUAN YU ◽  
LANYING LIN
Keyword(s):  
High Frequency ◽  
Chemical Vapor ◽  
High Energy ◽  
Annealing Effect ◽  
High Energy Electron ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pressure Chemical

The γ- Al 2 O 3 films were grown on Si (100) substrates using the sources of TMA ( Al ( CH 3)3) and O 2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the γ- Al 2 O 3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was γ- Al 2 O 3(100)/ Si (100). The thickness uniformity of γ- Al 2 O 3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000°C in O 2 atmosphere. The high-frequency C-V and leakage current of Al /γ- Al 2 O 3/ Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick γ- Al 2 O 3 film on silicon increases from 17V to 53V.

X-Ray Diffraction Patterns in High-Energy Proton Implanted Silicon

1998 ◽  
Vol 168 (1) ◽  
pp. 11-25 ◽  
Author(s):  
K. Wieteska ◽  
W. Wierzchowski ◽  
W. Graeff ◽  
K. D. Dłużewska
Keyword(s):  
High Energy ◽  
X Ray Diffraction ◽  
High Energy Proton ◽  
X Ray ◽  
Energy Proton ◽  
Diffraction Patterns

DSC-TGA Hydrogen Evaluation during Mechanical Milling of AlFe Intermetallic

2013 ◽  
Vol 755 ◽  
pp. 105-110 ◽  
Author(s):  
E. García de León M. ◽  
O. Téllez-Vázquez ◽  
C. Patiño-Carachure ◽  
G. Rosas
Keyword(s):  
Mechanical Milling ◽  
Milling Time ◽  
Hydrogen Generation ◽  
Pure Aluminum ◽  
High Energy ◽  
Milling Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns

Fe40Al60 (at%) intermetallic alloy composition was obtained by conventional casting methods and subsequently subjected to high-energy mechanical milling under different conditions of humidity. All samples were characterized by X-ray diffraction patterns (XRD), transmission electron microcopy (TEM) and DSC-TGA thermogravimetric experiments. After the milling process, the amount of hydrogen generated was determined using thermogravimetric analysis and chemical reactions (stoichiometry). All techniques confirm the formation of bayerite phase which is attributed to the hydrogen embrittlement reaction between the intermetallic material and water to release hydrogen. It was observed that the hydrogen generation is increased as the ball milling time is increased. The quantity of hydrogen evaluated is similar to that obtained in previous reported experiments with pure aluminum and some of its alloys.

scholarly journals Ag/AgCl/MIL-101(Fe) Catalyzed Degradation of Methylene Blue under Visible Light Irradation

Materials ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1453 ◽  
Author(s):  
Yun Liu ◽  
Yuanhong Xie ◽  
Mingjin Dai ◽  
Qingjiao Gong ◽  
Zhi Dang
Keyword(s):  
Methylene Blue ◽  
Catalytic Activity ◽  
Visible Light ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
Box Behnken Design ◽  
X Ray ◽  
Plasmonic Material ◽  
Fenton Catalyst ◽  
Diffraction Patterns

A novel photo-Fenton catalyst named Ag/AgCl/MIL-101(Fe) was synthesized by the method of precipitation and photo reduction and characterized by X-ray diffraction patterns (XRD), Brunauer-Emmett-Teller (BET) measurements, Fourier transform infrared spectra (FTIR), scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM-EDX), X-ray photoelectron spectroscopy (XPS) and UV-vis diffuse reflectance spectra. Moreover, the catalytic activity of the synthesized catalyst was tested using methylene blue (MB) as the target pollutant. The obtained results illustrated that the plasmonic material Ag/AgCl was successfully loaded on MIL-101(Fe) and the obtained catalyst exhibited an excellent catalytic activity under visible light at the neutral pH. According to the analyses of Plackett-Burman and Box-Behnken design, the optimum conditions for MB degradation were obtained. Under these conditions, the MB decolorization and mineralization efficiencies could reach to 99.75% and 65.43%, respectively. The recycling experiments also showed that the as-prepared catalyst displayed good reusability. In addition, the possible reaction mechanisms for the heterogeneous photo-Fenton system catalyzed by Ag/AgCl/MIL-101(Fe) were derived. The synthesized catalyst provides a promising approach to degrade organic pollutants in waste water.

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