Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films

1999 ◽  
Vol 592 ◽  
Author(s):  
Y. Miura ◽  
S. Fujieda ◽  
E. Hasegawa
Keyword(s):  
Paramagnetic Center ◽  
Vacuum Ultraviolet ◽  
Positive Charge ◽  
Silicon Oxynitride ◽  
Paramagnetic Centers ◽  
Zero Crossing ◽  
Charge Center ◽  
Spin Resonance ◽  
New Type ◽  
G Value

ABSTRACTElectron spin resonance (ESR) spectroscopy is used to explore the origin of positive charges in silicon oxynitride thin films formed in a N2O ambient. A new type of paramagnetic center in as-grown oxynitrides appeared as a single peak in the ESR spectrum with a zero crossing g value of 2.0006. This value suggests that the paramragnetic center is a kind of E' center. We investigated the quantitative behavior of the positive charge center and the paramagnetic center through the density changes induced by vacuum ultraviolet irradiation and hydrogen annealing. Based on the similar behavior of both types of center, we argue that the paramagnetic centers can account for a significant part of the positive charges specific to oxynitrides. Since the spin density increased with the oxynitridation temperature, the paramagnetic center is closely related to nitrogen incorporation processes.

Paramagnetic Centers in Microcrystalline Silicon

2002 ◽  
Vol 715 ◽  
Author(s):  
M. M. de Lima ◽  
S. Morrison ◽  
A. LeGeune ◽  
F. C. Marques ◽  
P. C. Taylor
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Crystalline Phase ◽  
Axial Symmetry ◽  
Low Temperatures ◽  
The Other ◽  
Paramagnetic Centers ◽  
Microcrystalline Silicon ◽  
Spin Resonance ◽  
G Value

AbstractWe have studied hydrogenated microcrystalline silicon, μc-Si:H, using dark and lightinduced electron spin resonance (ESR). In dark ESR measurements only one center is observed. The g values obtained empirically, assuming axial symmetry, from powder pattern lineshape simulations are g⊥∥ = 2.0096 and gτ = 2.0031. We suggest that this center is related to defects in the crystalline phase. Another signal, which occurs only after illumination, at low temperatures, is best described by two powder patterns indicating the presence of two centers. One center is slightly asymmetric (g∥ = 1.999, g⊥ = 1.996) and the other has a large unresolved broadening such that unique g-values cannot be obtained. The average g value for this center is 1.998. We interpret the light-induced electron spin resonance (LESR) signal as coming from electrons and holes trapped in the band tails at the crystalline grain boundaries.

A Surprising Result: “Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs

2016 ◽  
Vol 858 ◽  
pp. 513-517 ◽  
Author(s):  
Mark A. Anders ◽  
Patrick M. Lenahan ◽  
Aivars J. Lelis
Keyword(s):  
Magnetic Field ◽  
Elevated Temperature ◽  
Negative Bias ◽  
Surprising Result ◽  
Zero Crossing ◽  
Electrically Detected Magnetic Resonance ◽  
G Value ◽  
Bias Temperature Stress ◽  
Bias Instability ◽  
The Magnetic Field

We utilize electrically detected magnetic resonance and “on-the-fly” elevated temperature stressing to examine the effects of negative bias temperature stress on defects within the “bulk” SiC, that is, below the SiC/SiO2 interface. We observe generation of two temperature-dependent defects; one has a two (or three) line spectrum with lines separated by about 61 (30) Gauss when the SiC/SiO2 interface is perpendicular to the magnetic field and very slightly less, about 59 (30) Gauss when the SiC/SiO2 interface is parallel to the field. The second spectrum has a single line with zero-crossing g = 2.0118 when the magnetic field is nearly perpendicular to the SiC/SiO2 interface; the g-value drops to about 2.0016 with the field parallel to the SiC/SiO2 interface. We also observe strong evidence for hydrogen motion within the “bulk” SiC, as both spectra broaden significantly at elevated temperature, with broadening at both high and low fields and frequencies.

An electron‐spin resonance study of the structure of plasma‐deposited silicon‐oxynitride films

1987 ◽  
Vol 62 (3) ◽  
pp. 832-836 ◽  
Author(s):  
C. M. M. Denisse ◽  
J. F. M. Janssen ◽  
F. H. P. M. Habraken ◽  
W. F. Van der Weg ◽  
E. G. P. Schuivens
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Silicon Oxynitride ◽  
Electron Spin Resonance Study ◽  
Spin Resonance ◽  
Spin Resonance Study

ESR Of Graphite-Like Amorphous Carbon Thin Film In The 20 – 340 K Temperature Range

2006 ◽  
Vol 984 ◽  
Author(s):  
Gustavo A. Viana ◽  
Francisco C. Marques
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Ion Beam ◽  
Localized States ◽  
Paramagnetic Centers ◽  
Conduction Electrons ◽  
Temperature Range ◽  
Spin Resonance ◽  
Electron Energy Loss ◽  
Amorphous Carbon Thin Film

AbstractElectron spin resonance of graphite-like a-C thin films is investigated in the 20 K up to 340 K temperature range. The films with sp2 concentration of about 90 % (determined by electron energy loss spectroscopy), with no measurable optical band gap, were prepared by ion beam assisted sputtering. The results revealed an unexpected low density of paramagnetic centers, ascribed to itinerant states (conduction electrons) and not to localized states usually reported for a-C with band gap higher than 1.0 eV.

The Roles of Several E′ Variants in Thermal Gate Oxide Reliability

1994 ◽  
Vol 338 ◽  
Author(s):  
John F. Conley ◽  
P.M. Lenahan ◽  
H.L. Evans ◽  
R.K. Lowry ◽  
T.J. Morthorst
Keyword(s):  
Thin Film ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Vacuum Ultraviolet ◽  
Charge Injection ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Oxide Reliability ◽  
Spin Resonance ◽  
Thermally Grown

ABSTRACTWe combine electron spin resonance measurements with vacuum ultraviolet, ultraviolet, and corona bias charge injection schemes to examine the properties and charge trapping roles of three E′ variants in conventionally processed thermally grown thin film SiO2 on Si.

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