Modeling Metal Thin Film Growth under IPVD Conditions using Molecular Dynamics Rates in a Level Set Approach

We present a recently developed method for modeling ionized physical vapor deposition. Using molecular dynamics techniques we examine the surface adsorption, reflection and sputter reactions taking place during ionized physical vapor deposition. We predict their relative probabilities and combine the information obtained from molecular dynamics into a transport model incorporating all effects of re-emission and re-sputtering. This provides a complete growth rate model that allows the inclusion of energy and angular dependent surface reaction rates. As an example, the method is applied to growth of an aluminum film under different deposition conditions.