Structure of Polycrystalline Silicon Films by Glow-Discharge Decomposition using SiH4/H2/SiF4 at Low Temperature

1999 ◽  
Vol 581 ◽  
Author(s):  
R. Tsuchida ◽  
M. Syed ◽  
T. Inokuma ◽  
Y. Kurata ◽  
S. Hasegawa
Keyword(s):  
Power Supply ◽  
Vapor Deposition ◽  
Local Structure ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
High Angle Boundary ◽  
Rf Power ◽  
Nanocrystalline Structures ◽  
Si Films ◽  
Polycrystalline Silicon Films

ABSTRACTFor poly-Si films prepared by a plasma-enhanced chemical vapor deposition, we examined the changes in the local structure caused by adding H2 and/or SiF4 in the SiH4 feed gases and by changing supplied rf power values. The conditions of low rf power supply, low H2 addition, and SiF4 addition allow formation of films with microcrystalline or nanocrystalline structures. In addition, the H2 or SiF4 addition was found to be effective in promotive growth of <111> or <110> grains, respectively. In such low crystallized films, it was suggested that high-angle boundary would be formed, leading to a decrease in the density of SiH2 and Si dangling bonds, and to an increase in g values.

The Effect of DC Bias Voltage on the Structural and Optical Properties of Hydrogenated Nanocrystalline Si Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 1261-1264 ◽  
Author(s):  
Jae Hyun Shim ◽  
Nam Hee Cho
Keyword(s):  
Vapor Deposition ◽  
Amorphous Matrix ◽  
Chemical Vapor ◽  
Rf Power ◽  
Structural And Optical Properties ◽  
Dc Bias ◽  
Pl Emission ◽  
Si Films ◽  
Si Nanocrystallites ◽  
Nanocrystalline Si

Amorphous and nanocrystalline Si films were prepared by plasma enhanced chemical vapor deposition (PECVD). The films were deposited with a RF power of 100 W, while substrates were under DC biases varying from 0 to -600 V. The size as well as the concentration of Si nanocrystallites increased with raising the DC bias; the PL emission wavelength was shifted from 400 to 750 nm. A model for the nanostructural variation in the nc-Si:H films was suggested to describe the change in the size and concentration of the nanocrystallites as well as the amorphous matrix depending on the DC bias conditions.

Afm/Tem Investigation of Low Temperature Polycrystalline Silicon Grown by ECR-CVD

1995 ◽  
Vol 406 ◽  
Author(s):  
H. L. Hsiao ◽  
K. C. Wang ◽  
L. W. Cheng ◽  
A. B. Yang ◽  
T. R. Yew ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Chemical Vapor ◽  
Plan View ◽  
3 Dimensional ◽  
High Resolution Tem ◽  
Si Films ◽  
Polycrystalline Silicon Films

AbstractThe polycrystalline silicon films were deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) with hydrogen dilution at 250°C and without any thermal annealing. The surface morphology and the microstructure of the poly-Si films are investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM), crosssectional TEM and high resolution TEM (HRTEM). The low temperature poly-Si films deposited by ECR-CVD show a special leaf-like grain shape (plan-view) and an upside-down cone shape (3-dimensional view). The grains in the poly-Si films have preferred orientation of <112> and the longer side of the leaf-like grain is direction and the shorter side is direction. Lattice bending and interruption are found in the films. The arrangement of the atoms on the grains are well ordered, while atoms in the interfacial regions are randomly distributed. A simple grain formation model based on growth rate differences between different planes and etching effect can explain the film growth mechanism and the formation of the special grain geometry.

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