In Situ Deformation Studies of Fe/Al and Fe/Si Multi-Layered Films Prepared by Ion Beam Sputtering

1991 ◽  
Vol 239 ◽  
Author(s):  
K. Kubota ◽  
M. Naoe

ABSTRACTIn situ deformation measurements of Fe/Al and Fe/Si multi-layered films on thin substrates were made by detecting the curvature of substrates during deposition. The deformation inside of Fe layers corresponding to the compressive and tensile stresses was detected for the Fe/Al and Fe/Si multi-layered films, respectively. For the Fe/Si multi-layered films, the internal stress in Fe layers became from tensile to compressive during deposition under bombardment of Ar Jons. These stresses in Fe layer were closely related to the soft magnetic properties of these multi-layered films. In situ deformation studies may be useful to make sure the effect of internal stress on the magnetic properties of these multi-layered films.

2012 ◽  
Vol 465 ◽  
pp. 72-75
Author(s):  
Xiao Long Jiang ◽  
Y.J. Yao ◽  
M. Lai ◽  
K. Peng ◽  
Y.W. Du

A series of nanocrystalline FeNbB films were fabricated using ion-beam sputtering technique from FeNbB target. Pieces of these films were annealed for 1 hour at various temperatures up to 5730C. Room temperature soft magnetic properties of these films were measured. The influence of microstructure on magnetic behavior in nanocrystalline FeNbB films is investigated in a series of specimens with different film’s thickness. For the sample 120nm and 5000C annealed, cutoff frequency was found to be 5E7 Hz, which has the μf0=5E10.


2015 ◽  
Vol 233-234 ◽  
pp. 538-541
Author(s):  
Alexander Aleshnikov ◽  
Haider S. Mohammed Al-Azzawi ◽  
Y. Kalinin ◽  
Alexander Sitnikov ◽  
Oksana Tarasova

The films of heterogeneous systems based on ferromagnetic alloy and С were obtained by ion-beam sputtering. The concentration dependence of the resistance of composites was measured before and after heat treatment. The research of magnetostatic and magnetodynamic properties of heterogeneous metal-carbon showed that compounds (Co)Х(C)100-Х (Co40Fe40B20)Х(С)100-Х (Co45Fe45Zr10)Х(C)100-Х after the percolation threshold have good soft magnetic properties.


1991 ◽  
Vol 231 ◽  
Author(s):  
K. Kubota ◽  
M. Nagakubo ◽  
M. Naoe

AbstractFe and Si layers were deposited alternately by using ion beam sputtering apparatus and the relationship between crystal structure and soft magnetic properties of these multi-layered films have been investigated in detail. The clear periodicity of multi-layered films was confirmed even at the thicknesses of Fe and Si layers δFe and δSi as small as 8.5 Å.The saturation magnetization 4πMs for all Fe layers decreased with decrease of δFe and δSi, and the coercivity Hc of these films took minimum of 1.0 Oe at δFe of 8.5 Å.Such a significant decrease of 4TEMs may be attributed to the formation of nonmagnetic regions at both side of each Fe layers. The thickness of these nonmagnetic regions may be estimated at approximately 1.5 Å from the measured value of 4flMs. This thickness seems to be very small because it is almost equal to that of one monolayer of bcc α-Fe. The low Hc of the films with δFe and δSi of 8.5 Å may be due to the formation of ultra-fine crystallites in Fe layer by insertion of amorphous Si layer and the direct magnetostatic interaction among Fe layers.


1986 ◽  
Vol 80 ◽  
Author(s):  
M. Nagakubo ◽  
A. Kawano ◽  
M. Naoe

AbstractPure iron thin films with soft magnetic properties and good chemical stabilities have been prepared by Dual Ion Beam Sputtering (DIBS). Four kinds of gas, that is, hydrogen, helium, nitrogen and argon were introduced respectively to the auxiliary ion source as the additional element in the film and also for the purpose of bombardment during deposition. The dependence of crystal structure and magnetic properties of the films on the preparation condition, especially, on the effect of various gases added in the films by ion bombardment onto the depositing film surface, has been investigated.Saturation magnetization 4πMs of iron film including gas atoms is usually smaller than that of bulk iron which has 4πMs of 21.5kG. For example, 4πMs of the film prepared by conventional planer magnetron sputtering remains about 15kG. Such a remarkable difference in 4πMs may be primarily attributed to the considerable amount of argon atoms included in the film due to argon pressure as high as 10mTorr. It may be also caused by high energy particles bombarding onto the iron film surface during deposition. On the other hand, pure iron thin films prepared by Dual Ion Beam Sputtering can have 47Ms as high as 21.5kG, and coercive force Hc as low as about 4 Oe by controlling the ratio of sputtering iron atoms to argon gas atoms, impinging onto the substrate, and the arrival energies both of them. Magnetic properties and crystal structures of the iron thin films depend significantly on the kind of added gas. In this study, it has been found that bombardment and addition of adequate gas atoms with proper energy results in an improvement of atomic ordering and microscopic uniformity in the films.


Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.


1991 ◽  
Vol 27 (2) ◽  
pp. 1205-1210 ◽  
Author(s):  
J. Fujita ◽  
T. Yoshitake ◽  
T. Satoh ◽  
T. Ichihashi ◽  
H. Igarashi

1994 ◽  
Vol 133 (1-3) ◽  
pp. 493-496 ◽  
Author(s):  
P. Pain ◽  
J.P. Eymery ◽  
M. Cahoreau ◽  
M.F. Denanot ◽  
J.F. Dinhut

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