Fabrication of Shallow Junctions with Conventional Furnace Equipment by Using Silicon Preimplants

1999 ◽  
Vol 568 ◽  
Author(s):  
H. Puchner ◽  
S. Aronowitz
Keyword(s):  
Point Defect ◽  
Interaction Mechanism ◽  
Defect Interaction ◽  
Conventional Furnace ◽  
Alternative Approach ◽  
Shallow Junctions ◽  
Global Scaling ◽  
Scaling Down ◽  
Ultra Shallow Junctions ◽  
Diffusion Profiles

ABSTRACTThe global scaling down of device dimensions requires process technologies which are able to create ultra-shallow junctions. Besides using ultra-low implant energies for shallow junction creation we present an alternative approach for the creation of MDD (Medium Doped Drain) junctions by using moderately low implant energies. Our approach employs the dopant/point-defect interaction mechanism to retard dopant diffusion as well as dopant de-activation in the tail of the diffusion profiles to achieve suitable shallow junctions. The silicon preimplant allows fabrication of 90nm arsenic, 150nm phosphorus, and 140nm boron metallurgical junctions for a 40keV arsenic, 20keV phosphorus, and 8keV boron implant.

Steady-state point-defect diffusion profiles in solids during irradiation

1974 ◽  
Vol 23 (1) ◽  
pp. 53-59 ◽  
Author(s):  
Nghi Q. Lam ◽  
Steven J. Rothman ◽  
Rudolf Sizmanns
Keyword(s):  
Steady State ◽  
Point Defect ◽  
Defect Diffusion ◽  
State Point ◽  
Diffusion Profiles

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Formation of Ultra-Shallow Junctions by Advanced Plasma Doping Techniques

2011 ◽  
Author(s):  
G. D. Papasouliotis ◽  
L. Godet ◽  
V. Singh ◽  
R. Miura ◽  
H. Ito ◽  
...  
Keyword(s):  
Plasma Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth

2004 ◽  
Vol 22 (1) ◽  
pp. 306 ◽  
Author(s):  
R. Lindsay ◽  
K. Henson ◽  
W. Vandervorst ◽  
K. Maex ◽  
B. J. Pawlak ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Photoluminescence Characterization of Defects in Rapidly Annealed Ultra Shallow Junctions

2013 ◽  
Vol 2 (5) ◽  
pp. P195-P204 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Masashi Okutani ◽  
Gota Murai ◽  
Shuji Tagawa ◽  
Hiroki Saikusa ◽  
...  
Keyword(s):  
Shallow Junctions ◽  
Ultra Shallow Junctions

Defects in Ultra-Shallow Junctions

2008 ◽  
Author(s):  
Mark Law ◽  
Renata Camillo-Castillo ◽  
Lance Robertson ◽  
Kevin Jones
Keyword(s):  
Shallow Junctions ◽  
Ultra Shallow Junctions

Ultra-Shallow junctions in silicon using amorphous and polycrystalline silicon solid diffusion sources

1991 ◽  
Vol 20 (3) ◽  
pp. 261-265 ◽  
Author(s):  
Keunhyung Park ◽  
Shubneesh Batra ◽  
Sanjay Banerjee ◽  
Gayle Lux
Keyword(s):  
Polycrystalline Silicon ◽  
Solid Diffusion ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions
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