Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth

2004 ◽  
Vol 22 (1) ◽  
pp. 306 ◽  
Author(s):  
R. Lindsay ◽  
K. Henson ◽  
W. Vandervorst ◽  
K. Maex ◽  
B. J. Pawlak ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Modeling and Simulation of the Influence of SOI Structure on Damage Evolution and Ultra-shallow Junction Formed by Ge Preamorphization Implants and Solid Phase Epitaxial Regrowth

2006 ◽  
Vol 912 ◽  
Author(s):  
Caroline Mok ◽  
B. Colombeau ◽  
M. Jaraiz ◽  
P. Castrillo ◽  
J. E. Rubio ◽  
...  
Keyword(s):  
Damage Evolution ◽  
Solid Phase ◽  
Kinetic Monte Carlo ◽  
Silicon On Insulator ◽  
Bulk Silicon ◽  
Shallow Junction ◽  
Defect Interaction ◽  
Epitaxial Regrowth ◽  
Junction Formation ◽  
Ultra Shallow Junctions

AbstractPreamorphization implant (PAI) prior to dopant implantation, followed by solid phase epitaxial regrowth (SPER) is of great interest due to its ability to form highly-activated ultra-shallow junctions. Coupled with growing interest in the use of silicon-on-insulator (SOI) wafers, modeling and simulating the influence of SOI structure on damage evolution and ultra-shallow junction formation is required. In this work, we use a kinetic Monte Carlo (kMC) simulator to model the different mechanisms involved in the process of ultra-shallow junction formation, including amorphization, recrystallization, defect interaction and evolution, as well as dopant-defect interaction in both bulk silicon and SOI. Simulation results of dopant concentration profiles and dopant activation are in good agreement with experimental data and can provide important insight for optimizing the process in bulk silicon and SOI.

Solid Phase Epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions

2004 ◽  
Vol 810 ◽  
Author(s):  
R. El Farhane ◽  
C. Laviron ◽  
F. Cristiano ◽  
N. Cherkashin ◽  
P. Morin ◽  
...  
Keyword(s):  
Process Integration ◽  
Solid Phase ◽  
Cmos Process ◽  
Solid Phase Epitaxy ◽  
Electrical Characteristics ◽  
Use Of Self ◽  
Thermal Budget ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Low Thermal Budget

ABSTRACTWe demonstrate in this paper the viability of an ultra-low thermal budget CMOS process enabling the formation of ultra shallow junctions with competitive transistor characteristics. In particular, we demonstrate in this work the influence of defects on chemical and electrical results. It is shown that the use of self-amorphizing implantation with BF2for Source/Drain, reduces the junction leakage by two decades.

Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation

1998 ◽  
Vol 532 ◽  
Author(s):  
Kentaro Shibahara ◽  
Hiroaki Furumoto ◽  
Kazuhiko Egusa ◽  
Meishoku Koh ◽  
Shin Yokoyama
Keyword(s):  
Solid Phase ◽  
Early Stage ◽  
Low Energy ◽  
Resistance Increase ◽  
Junction Formation ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Two Stages ◽  
Dopant Loss ◽  
Sims Depth Profile

ABSTRACTWe have investigated the origins of sheet resistance increase in ultra shallow junctions formed by low energy As or Sb implantation. The increase is mainly attributed to dopant loss during annealing due to pileup of dopant at Si02/Si interface. This problem is common to As and Sb and will become more significant as the implantation energies are decreased. We found that the pileup can be classified into two stages from the time dependence of Sb SIMS depth profile .In the early stage of annealing the pileup is very fast and is probably related to the transport of the dopants due to solid phase epitaxial growth of an amorphized layer formed by the implantation. In the later stage the pileup is much slower and is considered to be governed by dopant diffusion.

Performance of (110) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

2011 ◽  
Vol 88 (7) ◽  
pp. 1265-1268
Author(s):  
A. Ohata ◽  
Y. Bae ◽  
T. Signamarcheix ◽  
J. Widiez ◽  
B. Ghyselen ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth

Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation

1989 ◽  
Vol 54 (1) ◽  
pp. 42-44 ◽  
Author(s):  
B. T. Chilton ◽  
B. J. Robinson ◽  
D. A. Thompson ◽  
T. E. Jackman ◽  
J.‐M. Baribeau
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Strained Layer ◽  
Epitaxial Regrowth ◽  
Layer Structures

USJ formation using solid phase epitaxial regrowth and femtosencond laser anneal

2012 ◽  
Author(s):  
Tzu-Lang Shih ◽  
Sheng-Wen Chen ◽  
Chang-Peng Wu ◽  
Chung-Wei Cheng ◽  
Chih-Wei Chien ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Laser Anneal

Formation of Ultra-Shallow Junctions by Advanced Plasma Doping Techniques

2011 ◽  
Author(s):  
G. D. Papasouliotis ◽  
L. Godet ◽  
V. Singh ◽  
R. Miura ◽  
H. Ito ◽  
...  
Keyword(s):  
Plasma Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

scholarly journals Atomistic modeling of the Ge composition dependence of solid phase epitaxial regrowth in SiGe alloys

2017 ◽  
Vol 122 (10) ◽  
pp. 105702
Author(s):  
M. Prieto-Depedro ◽  
A. Payet ◽  
B. Sklénard ◽  
I. Martin-Bragado
Keyword(s):  
Composition Dependence ◽  
Solid Phase ◽  
Atomistic Modeling ◽  
Epitaxial Regrowth
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