Growth and Electrical Performance of Heterojunction P+ Si1−x−yGexCy/p+ Si Diodes

1995 ◽  
Vol 402 ◽  
Author(s):  
C. L. Chang ◽  
A. St. Amour ◽  
L. D. Lanzerotti ◽  
J. C. Sturm
Keyword(s):  
Valence Band ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Thermal Chemical Vapor Deposition ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Carbon Concentrations ◽  
Valence Band Discontinuity ◽  
Germanium Concentration

AbstractWe have fabricated heterojunction p+ Si1−x−yGexCy/ p+ Si diodes. The SiGeC layers were grown epitaxially on Si (100) substrates by the rapid thermal chemical vapor deposition (RTCVD) technique using methysilane gas as a carbon precursor. The germanium concentration is 20% in these SiGeC alloys and the carbon concentrations are in the range of 0% to 1%. By studying the current-voltage characteristics of these diodes as a function of temperature the valence band discontinuities between SiGeC and Si layers were obtained as a function of carbon concentrations. We have found that the valence band discontinuity of the SiGe/Si heterostructure decreases by II meV when 1% of carbon is incorporated. Photoluminescence (PL) results show that 1% carbon increases the bandgap of strained p+SiGe alloys by 25 meV. This would imply that the conduction band discontinuity of SiGe/Si will decrease by 14 meV when 1% carbon is incorporated.

scholarly journals Use of the Thermal Chemical Vapor Deposition to Fabricate Light-Emitting Diodes Based on ZnO Nanowire/p-GaN Heterojunction

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Sheng-Po Chang ◽  
Ting-Hao Chang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Zno Nanowire ◽  
Light Emitting ◽  
Thermal Chemical Vapor Deposition ◽  
Current Voltage ◽  
Vertically Aligned ◽  
Current Voltage Characteristics

The fabrication and characteristics of grown ZnO nanowire/p-GaN heterojunction light-emitting diodes are reported. Vertically aligned ZnO nanowire arrays were grown on a p-GaN substrate by thermal chemical vapor deposition in quartz tube. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room temperature electroluminescent emission peak at 425 nm was attributed to the band offset at the interface between the n-ZnO nanowire and p-GaN and to defect-related emission from GaN; it was also found that the there exist the yellow band in the hetrojunction. It would be attributed to the deep defect level in the heterojunction.

scholarly journals Туннельные диоды на базе эпитаксиальных структур n-=SUP=-+-=/SUP=--Ge/p-=SUP=-+-=/SUP=--Si(001), выращенных методом горячей проволоки

2019 ◽  
Vol 53 (9) ◽  
pp. 1267
Author(s):  
В.Г. Шенгуров ◽  
Д.О. Филатов ◽  
С.А. Денисов ◽  
В.Ю. Чалков ◽  
Н.А. Алябина ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
Negative Differential Resistance ◽  
Chemical Vapor ◽  
Differential Resistance ◽  
Tunnel Diodes ◽  
Donor Impurity ◽  
Hot Wire ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstractn ^+-Ge/ p ^+-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH_4 at a low substrate temperature (~325°C). Prototype tunnel diodes allowing for monolithic integration into Si-based integrated circuits are formed based on these structures. Doping of the n ^+-Ge layers with a donor impurity (P) to a concentration of >1 × 10^19 cm^–3 is performed via the thermal decomposition of GaP. Distinct regions of the negative differential resistance are observed in the current–voltage characteristics of tunnel diodes.

The Effect of Camphor Oil Amounts on the Properties of Amorphous Carbon Thin Films by Thermal Chemical Vapor Deposition

2012 ◽  
Vol 576 ◽  
pp. 611-614
Author(s):  
K. Dayana ◽  
A.N. Fadzilah ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Current Voltage ◽  
Carbon Thin Films ◽  
Camphor Oil

Amorphous carbon thin films have been deposited by a simple Thermal Chemical Vapor Deposition (CVD) with varying the amount of natural precursor (camphor oil) onto the glass substrates. In this work, we have investigated the effect of different amount of camphor oil on the evolution of electrical conductivity and the optical and structural properties of amorphous carbon thin films. The amorphous carbon thin films were characterized by using current-voltage (I-V) measurement, UV-VIS-NIR spectroscopy and Raman spectroscopy. The current-voltage (I-V) study reveals that the highest electrical conductivity was deposited at 3 ml camphor oil. The optical band gap is almost unchanged with the increase of camphor oil amount. Raman result indicates that amorphous carbon thin films consists a mixture of sp2 and sp3 bonded carbon atoms.

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