Agglomeration Of Cu Electroplating Seed Layers On Ultra-Thin Ta, Ta1-xNx, Tal-xOx, Contaminated Ta, and Composite Ta/Ta1-xNx Diffusion Barriers

1999 ◽  
Vol 564 ◽  
Author(s):  
J. W. Hartman ◽  
Helen Yeh ◽  
H. A. Atwater ◽  
Imran Hashim
Keyword(s):  
Crystallographic Texture ◽  
Ultrahigh Vacuum ◽  
Diffusion Barriers ◽  
Sputter Deposition ◽  
Copper Films ◽  
Adhesion Layer ◽  
Cu Films ◽  
Cu Electroplating ◽  
Residual Gas ◽  
Seed Layers

AbstractThe agglomeration of thin (10 nm) Cu films suitable for use as electroplating seed layers has been investigated on ultrathin (<4 nm) Ta, Ta1-xNx, Tal-xOx, and composite Ta/Ta1-xNx, diffusion barriers. Copper films on clean 3.6nm Ta barriers deposited by ultrahigh vacuum sputter deposition at up to 120°C are stable against agglomeration during 30 minute anneals at 360°C and display strong (022) crystallographic texture. Similar Cu films deposited on thinner Ta, Ta0 85N0 15, Ta0.95O0 05, and residual gas contaminated (∼ 1 Langmuir) Ta barriers agglomerate during annealing, and Cu films on Ta0 85N0 15 and contaminated Ta have random biaxial crystallographic texture. The density of agglomerated regions in Cu films on SiO2 and Ta0 85N0 15 is characterized as a function of thickness of an ultrathin Ta adhesion layer.

Texture of Sputtered Thin Copper Films on Amorphous SiO2 and Si3N4 substrates.

2001 ◽  
Vol 695 ◽  
Author(s):  
Brando Okolo ◽  
Udo Welzel ◽  
Peter Lamparter ◽  
Thomas Wagner ◽  
Eric J. Mittemeijer
Keyword(s):  
Crystallographic Texture ◽  
Thick Films ◽  
Copper Films ◽  
X Ray Diffraction ◽  
Amorphous Sio2 ◽  
Obvious Effect ◽  
X Ray ◽  
Cu Films ◽  
Sputter Deposited ◽  
Substrate Surfaces

ABSTRACTCu films with thickness of 500nm and 5nm have been sputter deposited on amorphous SiO2 and Si3N4 substrates without and after sputter cleaning. The crystallographic texture has been characterized by x-ray diffraction techniques. Sputter cleaning of the substrates, by which the oxygen contaminants are removed from the Si3N4 substrates, leads to an increase in the {111} texture strength and sharpness of the Cu films on Si3N4. The texture is sharper in the 500nm thick Cu films than in the 5nm thick films. Roughness differences of the substrate surfaces have no obvious effect on the texture state.

Growth of Single Crystal Copper Films on Diamond Using Fcc-Iron Seed Layers

1994 ◽  
Vol 339 ◽  
Author(s):  
D. P. Pappas ◽  
V. G. Harris ◽  
H. A. Hoff ◽  
G. L. Watena ◽  
J. W. Glesener
Keyword(s):  
Single Crystal ◽  
Seed Layer ◽  
Copper Films ◽  
Cu Films ◽  
Fee Structure ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Exafs Study ◽  
X Ray Absorption ◽  
Seed Layers

ABSTRACTCopper films were grown on a single crystal diamond substrate using an iron seed layer. The effect of the crystalline structure of the iron seed on the Cu films was studied with extended x-ray absorption fine structure (EXAFS) and scanning electron microscopy (SEM). The EXAFS study shows that the 10 Å Fe seed layer is in an fee structure, and has collapsed into a bec structure by the time 20 Å of Fe has been deposited. In the SEM pictures it is observed that subsequent layers of Cu grow as continuous films for thin fcc-Fe seeds, and grow in an island mode for the thick, bcc-Fe seeds.

Copper Electroplating on Zero-Thickness ALD Platinum for Nanoscale Computer Chip Interconnects

2006 ◽  
Vol 914 ◽  
Author(s):  
Alain Kaloyeros ◽  
Yu Zhu ◽  
Kathleen Dunn ◽  
Richard Mayti ◽  
Christopher Miller ◽  
...  
Keyword(s):  
Sessile Drop ◽  
Reverse Current ◽  
Atomic Layer ◽  
Organic Additive ◽  
Constant Current ◽  
Nucleation Density ◽  
Cross Sectional ◽  
Cu Films ◽  
Copper Electroplating ◽  
Seed Layers

AbstractUltra-thin platinum (Pt) films grown by atomic layer deposition (ALD) have been investigated as an alternative to conventional physical vapor deposited (PVD) Cu as seed layer for copper (Cu) electroplating. The wetting angles between the electrolyte and both Pt and Cu seed layers were analyzed using sessile-drop contact-angle analysis prior to plating. Both constant current and pulse reverse current (PRC) were applied to electroplate Cu on both types of blanket seed layers. Scanning electron microscope (SEM) revealed that Cu nucleation density on ALD Pt is lower than on its PVD Cu counterpart, after 30 seconds plating using PRC. Nevertheless, Cu nuclei were observed after only 1.0 minute plating on ALD Pt surfaces, and continuous Cu films were achieved at longer plating times. To fill trench structures coated with ALD Pt/TaN, PRC was applied using the same organic-additive-free electrolyte. Initial results suggest that these seed layers were adequate for ECD fill of trenches with 200 nm feature size and aspect ratio 7:1. The composition and microstructure of the Cu films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD), and cross-sectional transmission electron microscopy (TEM). Thermal stability of the Cu/Pt system was examined by annealing in forming gas at 450°C for 1 hour and subsequent analysis by XRD and TEM.

Structural Characterization of Epitaxial GMR Magnetic Multilayers and Spin Valves Grown by Sputter Deposition

2000 ◽  
Vol 614 ◽  
Author(s):  
H. Geng ◽  
R. Loloee ◽  
J.W. Heckman ◽  
J. Bass ◽  
W.P. Pratt ◽  
...  
Keyword(s):  
High Resolution ◽  
Epitaxial Growth ◽  
Magnetic Multilayers ◽  
Sputter Deposition ◽  
Dc Magnetron Sputtering ◽  
Cu Films ◽  
Electron Backscatter ◽  
High Resolution Tem ◽  
Fcc Structure

ABSTRACTEpitaxial Cu/Py/FeMn and (Cu/Co)×20 GMR magnetic multilayers were grown on single crystal (011) Nb that was deposited on (1121) Al2O3 substrates by dc magnetron sputtering. Electron backscatter patterns (EBSPs) revealed that the Cu films display two twin variants, corresponding to two stacking sequences of {111} planes in fcc. The epitaxial orientation relationship between the bcc Nb and both fcc Cu variants was the Nishiyama-Wasserman (N-W) relationship. Conventional TEM observations revealed epitaxial growth for both the Cu/Py/FeMn and (Cu/Co)×20 multilayers. High-resolution TEM confirmed epitaxial growth of close packed (011) Nb on (1120) Al2O3 substrates with [111]Nb∥[0001]Al2O3. Numerous small twins were observed in the Cu near the Cu-Nb interface of the Cu/Py/FeMn multilayer. In the Cu/Co multilayer, the growth planes of the Cu and Co were found to be {100} instead of the expected close-packed {111} planes of the fcc structure.

Stress development and relaxation in copper films during thermal cycling

1993 ◽  
Vol 8 (8) ◽  
pp. 1845-1852 ◽  
Author(s):  
M.D. Thouless ◽  
J. Gupta ◽  
J.M.E. Harper
Keyword(s):  
Thermal Cycling ◽  
Integrated Circuit ◽  
Temperature Hysteresis ◽  
Copper Films ◽  
Cu Films ◽  
Dislocation Glide ◽  
Temperature Range ◽  
Cu Film ◽  
Relaxation Of Stresses ◽  
Power Law Creep

The reliability of integrated-circuit wiring depends strongly on the development and relaxation of stresses that promote void and hillock formation. In this paper an analysis based on existing models of creep is presented that predicts the stresses developed in thin blanket films of copper on Si wafers subjected to thermal cycling. The results are portrayed on deformation-mechanism maps that identify the dominant mechanisms expected to operate during thermal cycling. These predictions are compared with temperature-ramped and isothermal stress measurements for a 1 μm-thick sputtered Cu film in the temperature range 25–450 °C. The models successfully predict both the rate of stress relaxation when the film is held at a constant temperature and the stress-temperature hysteresis generated during thermal cycling. For 1 μm-thick Cu films cycled in the temperature range 25–450 °C, the deformation maps indicate that grain-boundary diffusion controls the stress relief at higher temperatures (>300 °C) when only a low stress can be sustained in the films, power-law creep is important at intermediate temperatures and determines the maximum compressive stress, and that if yield by dislocation glide (low-temperature plasticity) occurs, it will do so only at the lowest temperatures (<100 °C). This last mechanism did not appear to be operating in the film studied for this project.

Detachable (111) Cu Films Formed in Ultrahigh Vacuum

1973 ◽  
Vol 10 (1) ◽  
pp. 160-163 ◽  
Author(s):  
C. T. Horng ◽  
R. W. Vook
Keyword(s):  
Ultrahigh Vacuum ◽  
Cu Films

In-Situ Tem Investigation During Thermal Cycling of thin Copper Films

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Copper Films ◽  
Stress Evolution ◽  
Cu Films ◽  
Transmission Electron ◽  
Insight Into

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.

Controls of Crystallinity and Surface Roughness of Cu Film in Partially Ionized Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
Seok-Keun Koh ◽  
Ki-Hwan Kim ◽  
Won-Kook Choi ◽  
Hong-Gui Jang ◽  
Young-Soo Yoon ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ionization Potential ◽  
Relative Intensity ◽  
Intensity Ratio ◽  
Ion Beam ◽  
Average Energy ◽  
Relative Intensity Ratio ◽  
Cu Films ◽  
Acceleration Potential ◽  
Residual Gas

AbstractChanges of crystallinity and surface roughness are discussed in terms of the average energy per deposited atom in the partially ionized beam(PIB) deposition. The average energy per deposited atom can be controlled by adjusting the ionization potential, Vi and acceleration potential, Va. The ion beam consists of a Cu ion beam and residual gas ion beam and residual gases as well as Cu particles that were ionized and accelerated to provide the film with energy required for film-growth. The relative contribution of residual gas ions and Cu ions to total average energy per deposited atom was varied with the ionization potential. At fixed ionization potentials of Vi=400 V and Vi=450 V, the average energy per deposited atom was varied in the range of 0 to 120 eV with acceleration potential Va, of 0 to 4 kV. The relative intensity ratio, 1(111)/I(200), of the Cu films increased from 6 to 37 and the root mean square(Rms) surface roughness decreased with an increase in acceleration potential at Vi=400 V. The relative intensity ratio, I(lll)/I(200), of Cu films increased up to Va=2 kV at Vi=2 kV, above which a decrease occurred, and the surface roughness of Cu films increased as a funtion of acceleration potential. The degree of preferred orientation was closely related with the average energy per deposited atom. The change of Rms roughness might be affected by ion flux, particle energy and preferred orientation.

Ultrahigh vacuum station for thin film and residual gas analysis studies

Vacuum ◽  
1966 ◽  
Vol 16 (3) ◽  
pp. 121-124 ◽  
Author(s):  
G.A. Rozgonyi ◽  
W.J. Polito ◽  
B. Schwartz
Keyword(s):  
Thin Film ◽  
Ultrahigh Vacuum ◽  
Gas Analysis ◽  
Residual Gas
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