Detachable (111) Cu Films Formed in Ultrahigh Vacuum

1973 ◽  
Vol 10 (1) ◽  
pp. 160-163 ◽  
Author(s):  
C. T. Horng ◽  
R. W. Vook
Keyword(s):  
Ultrahigh Vacuum ◽  
Cu Films

Comment on "Electrochemical and Ultrahigh Vacuum Characterization of Ultrathin Cu Films on Pt(111)"

Langmuir ◽  
1994 ◽  
Vol 10 (3) ◽  
pp. 976-977 ◽  
Author(s):  
Philip N. Ross ◽  
Nenad Markovic
Keyword(s):  
Ultrahigh Vacuum ◽  
Cu Films

Agglomeration Of Cu Electroplating Seed Layers On Ultra-Thin Ta, Ta1-xNx, Tal-xOx, Contaminated Ta, and Composite Ta/Ta1-xNx Diffusion Barriers

1999 ◽  
Vol 564 ◽  
Author(s):  
J. W. Hartman ◽  
Helen Yeh ◽  
H. A. Atwater ◽  
Imran Hashim
Keyword(s):  
Crystallographic Texture ◽  
Ultrahigh Vacuum ◽  
Diffusion Barriers ◽  
Sputter Deposition ◽  
Copper Films ◽  
Adhesion Layer ◽  
Cu Films ◽  
Cu Electroplating ◽  
Residual Gas ◽  
Seed Layers

AbstractThe agglomeration of thin (10 nm) Cu films suitable for use as electroplating seed layers has been investigated on ultrathin (<4 nm) Ta, Ta1-xNx, Tal-xOx, and composite Ta/Ta1-xNx, diffusion barriers. Copper films on clean 3.6nm Ta barriers deposited by ultrahigh vacuum sputter deposition at up to 120°C are stable against agglomeration during 30 minute anneals at 360°C and display strong (022) crystallographic texture. Similar Cu films deposited on thinner Ta, Ta0 85N0 15, Ta0.95O0 05, and residual gas contaminated (∼ 1 Langmuir) Ta barriers agglomerate during annealing, and Cu films on Ta0 85N0 15 and contaminated Ta have random biaxial crystallographic texture. The density of agglomerated regions in Cu films on SiO2 and Ta0 85N0 15 is characterized as a function of thickness of an ultrathin Ta adhesion layer.

Precipitation in Al + 4% Cu Epitaxial Films

1968 ◽  
Vol 26 ◽  
pp. 384-385
Author(s):  
S. Herd ◽  
S. M. Mader
Keyword(s):  
Solid Solution ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Detectable Change ◽  
Cu Films ◽  
Solution Treated ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Deposited Films

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.

Some Properties and Structural Features of Poly(Vinyl Chloride)/Cu Films with Copper Nanoparticles Obtained by Exploding Wire Methodu

2020 ◽  
Vol 12 (4) ◽  
pp. 04032-1-04032-5
Author(s):  
V. V. Krivtsov ◽  
◽  
V. V. Kukla ◽  
V. V. Krivtsov ◽  
A. I. Shidlovskiy ◽  
...  
Keyword(s):  
Vinyl Chloride ◽  
Copper Nanoparticles ◽  
Structural Features ◽  
Exploding Wire ◽  
Cu Films ◽  
Poly Vinyl Chloride

IONIZATION GAGE FOR ULTRAHIGH VACUUM

2019 ◽  
Vol 68 ◽  
pp. 126-133
Author(s):  
V. K. Bazylev ◽  
◽  
A. M. Zhidkov ◽  
V. A. Korotchenko ◽  
V. E. Skvortsov ◽  
...  
Keyword(s):  
Ultrahigh Vacuum

Ultrahigh-Vacuum Electron Microscopy for Gold Nanostructures

2001 ◽  
Vol 7 (S2) ◽  
pp. 920-921
Author(s):  
Yukihito Kondo ◽  
Kimiharu Okamoto ◽  
Mikio Naruse ◽  
Toshikazu Honda ◽  
Mike Kersker
Keyword(s):  
Electron Microscopy ◽  
Field Emission ◽  
Electronic Devices ◽  
Ultrahigh Vacuum ◽  
Gold Nanostructures ◽  
Scanning Tunneling ◽  
Nano Scale ◽  
Transmission Electron ◽  
Column Type ◽  
Schottky Type

Ultrahigh-vacuum transmission electron microscopy (UHVTEM) has become increasingly popular for the direct observation of nanostructures having clean surfaces, since industrial requirements to make and research nano-scale materials have been rapidly growing for quantum or nanoscale electronic devices. Since we have first developed high resolution UHVTEM in 1986, the UHVTEMs have been evolved with steady advances such as UHV compatible goniometer, field emission gun or etc. Furthermore, the UHVTEM started to combine analytical capabilities such as energy dispersive X-ray spectrometer, in-column type energy filter and etc., and to combine STM (scanning tunneling microscope). The UHV technology is essential for the analysis, because the portion of contaminant in a nano-scale specimen increases as the size of the specimen goes down. This paper reports the results of gold nanostructures by recently the developed UHVTEM.Figure 1 shows recently developed UHVTEM with Schottky type field emission gun.

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