Growth of Single Crystal Copper Films on Diamond Using Fcc-Iron Seed Layers

1994 ◽  
Vol 339 ◽  
Author(s):  
D. P. Pappas ◽  
V. G. Harris ◽  
H. A. Hoff ◽  
G. L. Watena ◽  
J. W. Glesener
Keyword(s):  
Single Crystal ◽  
Seed Layer ◽  
Copper Films ◽  
Cu Films ◽  
Fee Structure ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Exafs Study ◽  
X Ray Absorption ◽  
Seed Layers

ABSTRACTCopper films were grown on a single crystal diamond substrate using an iron seed layer. The effect of the crystalline structure of the iron seed on the Cu films was studied with extended x-ray absorption fine structure (EXAFS) and scanning electron microscopy (SEM). The EXAFS study shows that the 10 Å Fe seed layer is in an fee structure, and has collapsed into a bec structure by the time 20 Å of Fe has been deposited. In the SEM pictures it is observed that subsequent layers of Cu grow as continuous films for thin fcc-Fe seeds, and grow in an island mode for the thick, bcc-Fe seeds.

scholarly journals Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5964
Author(s):  
Guoqing Shao ◽  
Juan Wang ◽  
Shumiao Zhang ◽  
Yanfeng Wang ◽  
Wei Wang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Cross Section ◽  
Growth Model ◽  
Diamond Growth ◽  
Step Flow ◽  
Homoepitaxial Growth ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Step Flow Growth

Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.

scholarly journals 708 Atomic-scale flattening method for single-crystal diamond substrate

2014 ◽  
Vol 2014.67 (0) ◽  
pp. _708-1_-_708-3_
Author(s):  
Shin NAGAE ◽  
Yusuke ARAO ◽  
Akihisa KUBOTA ◽  
Mutsumi TOUGE ◽  
Shinichi SHIKATA ◽  
...  
Keyword(s):  
Single Crystal ◽  
Atomic Scale ◽  
Diamond Substrate ◽  
Single Crystal Diamond

scholarly journals Damage-free highly efficient plasma-assisted polishing of a 20-mm square large mosaic single crystal diamond substrate

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Nian Liu ◽  
Kohki Sugawara ◽  
Naoya Yoshitaka ◽  
Hideaki Yamada ◽  
Daisuke Takeuchi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Removal Rate ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Highly Efficient ◽  
Atomic Force ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Measurement Results

Abstract Plasma-assisted polishing (PAP) as a damage-free and highly efficient polishing technique has been widely applied to difficult-to-machine wide-gap semiconductor materials such as 4H-SiC (0001) and GaN (0001). In this study, a 20-mm square large mosaic single crystal diamond (SCD) substrate synthesized by microwave plasma chemical vapor deposition (CVD) was polished by PAP. Argon-based plasma containing oxygen was used in PAP to modify the surface of quartz glass polishing plate, and a high material removal rate (MRR) of 13.3 μm/h was obtained. The flatness of SCD polished by PAP measured by an interferometer was 0.5 μm. The surface roughness measured by both scanning white light interferometer (SWLI) (84-μm square) and atomic force microscope (AFM) (5-μm square) was less than 0.5 nm Sq. The micro-Raman spectroscopy measurement results of mosaic SCD substrate processed by PAP showed that residual stress and non-diamond components on the surface after PAP processing were below the detection limit.

Epitaxial Growth of fee Fe and Cu Films on Diamond

1993 ◽  
Vol 313 ◽  
Author(s):  
D.P. Pappas ◽  
J.W. Glesener ◽  
V.G. Harris ◽  
J.J. Krebs ◽  
Y.U. Idzerda ◽  
...  
Keyword(s):  
Room Temperature ◽  
High Energy ◽  
Copper Films ◽  
Face Centered Cubic ◽  
Continuous Film ◽  
X Ray ◽  
Cu Films ◽  
Face Centered ◽  
X Ray Absorption ◽  
Oriented Single Crystal

ABSTRACTThe growth of iron and copper films and multilayers on the (100) face of diamond has been achieved and studied by reflection high energy electron diffraction (RHEED), extended x-ray absorption fine structure (EXAFS), ferromagnetic resonance (FMR), and SQUID Magnetometry. RHEED and AES studies show that 2–3 atomic layers (AL) of Fe on C (100) forms a continuous film. The films as deposited at room temperature are disordered, and after a 350° C anneal displays a face-centered cubic structure. Subsequent layers of Cu on this epitaxial Fe film grow as an oriented, single crystal fee film. FMR and SQUID signals have been observed from the Fe films, showing that they are ferromagnetic.

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

2009 ◽  
Vol 311 (21) ◽  
pp. 4539-4542 ◽  
Author(s):  
A. Dussaigne ◽  
M. Malinverni ◽  
D. Martin ◽  
A. Castiglia ◽  
N. Grandjean
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Diamond Substrate ◽  
Single Crystal Diamond

Pulsed MOCVD of Cu Seed Layer using a (Hfac)Cu(3,3-Dimethyl-1-Butene) Source Plus H2 Reactant

2004 ◽  
Vol 812 ◽  
Author(s):  
Jaebum Park ◽  
Heejung Yang ◽  
Jaegab Lee
Keyword(s):  
Seed Layer ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Active Role ◽  
Cu Films ◽  
Scale Thickness ◽  
Grain Sizes ◽  
Conformal Coatings ◽  
Deposited Films ◽  
Seed Layers

AbstractPulsed metalorganic chemical vapor deposition (MOCVD) of conformal copper seed layers, for the electrodeposition Cu films, has been achieved by an alternating supply of a Cu(I) source and H2 reactant at the deposition temperatures of 50 - 100°C. The Cu thickness increased proportionally to the number of cycle, and the growth rate was in the range of 3.5 to 8.2 A /cycle, showing the ability to control the nano-scale thickness. As-deposited films show highly smooth surfaces even for more than 100nm. In addition, about a 90% step coverage was obtained inside trenches, with an aspect ratio greater than 30:1. H2, introduced as a reactant gas, can play an active role in achieving highly conformal coatings, with increased grain sizes.

Organic Solution Deposition of Copper Seed Layers onto Barrier Metals

2000 ◽  
Vol 612 ◽  
Author(s):  
H. Gu ◽  
R. Fang ◽  
T. J. O'Keefe ◽  
M. J. O'Keefe ◽  
W.-S. Shih ◽  
...  
Keyword(s):  
Thin Films ◽  
Seed Layer ◽  
Copper Deposition ◽  
Copper Films ◽  
Exchange Reactions ◽  
Organic Solution ◽  
Spontaneous Deposition ◽  
Electroless Copper ◽  
Barrier Metal ◽  
Seed Layers

AbstractSpontaneous deposition of copper seed layers from metal bearing organic based solutions onto sputter deposited titanium, titanium nitride, and tantalum diffusion barrier thin films has been demonstrated. Based on electrochemically driven cementation exchange reactions, the process was used to produce adherent, selectively deposited copper metal particulate films on blanket and patterned barrier metal thin films on silicon substrates. The organic solution deposited copper films were capable of acting as seed layers for subsequent electrolytic and electroless copper deposition processes using standard plating baths. Electroless and electrolytic copper films from 0.1µm to 1.0µm thick were produced on a variety of samples on which the organic solution copper acted as the initial catalytic seed layer. The feasibility of using organic solution deposited palladium as a seed layer followed by electroless copper deposition has also been demonstrated. In addition, experiments conducted on patterned barrier metal samples with exposed areas of dielectric such as polyimide indicated that no organic solution copper or palladium deposition occurred on the insulating materials.

PROPERTIES OF COPPER LAYER ON Si(100) FROM Cu(dmamb)2

2010 ◽  
Vol 17 (03) ◽  
pp. 307-310
Author(s):  
SEONG-EON JIN ◽  
DOHAN LEE ◽  
SEUNGMOO LEE ◽  
JONG-MUN CHOI ◽  
BUMJOON KIM ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Buffer Layer ◽  
Barrier Layer ◽  
Vapor Deposition ◽  
Seed Layer ◽  
Chemical Vapor ◽  
Cu Films ◽  
Seed Layers

Cu seed layer was deposited by chemical vapor deposition using new Cu precursor, Cu(dmamb) 2. The Cu layers still need the barrier layer to prevent the diffusion, so Ta and Ti were used for the barrier layer on Si(100) . Low temperature (LT) copper buffer layer was introduced and the effect of the buffer on the Cu films was investigated. The grown Cu layers were analyzed using FESEM, XRD, and four point probe measurement. The Cu seed layers were successfully deposited using Cu(dmamb) 2 precursor. Better thickness uniformity was obtained in the Cu films with the LT Cu buffer, which lowered the electrical resistivity.

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