Cathodoluminescence of Quartz, Silica and Thin Amorphous SiO2 Layers

1999 ◽  
Vol 560 ◽  
Author(s):  
T. Barfels ◽  
H.-J. Fitting ◽  
A. von Czarnowski
Keyword(s):  
Infrared Absorption ◽  
Structural Models ◽  
Hole Center ◽  
Amorphous Sio2 ◽  
Luminescence Centers ◽  
Oxygen Hole ◽  
Absorption Measurements

ABSTRACTCathodoluminescence and its temperature-dose behaviour of different modifications of SiO2 are presented. The detected luminescence bands are attributed to three optical active luminescence centers: the twofold coordinated silicon center (=Si:), the non-bridging oxygen hole center (NBOHC) and the self-trapped exciton (STE). The experiments are correlated with infrared absorption measurements. Existing structural models are discussed with reference to our results.

High-pressure far-infrared absorption measurements on La1−xCaxMnO3−δ by means of synchrotron radiation

2006 ◽  
Vol 49 (1-2) ◽  
pp. 92-95
Author(s):  
A. Sacchetti ◽  
M. Cestelli Guidi ◽  
E. Arcangeletti ◽  
P. Postorino ◽  
A. Nucara ◽  
...  
Keyword(s):  
High Pressure ◽  
Synchrotron Radiation ◽  
Infrared Absorption ◽  
Far Infrared ◽  
Absorption Measurements

Influence of fluorine on the fiber resistance studied through the nonbridging oxygen hole center related luminescence

2013 ◽  
Vol 113 (19) ◽  
pp. 193107 ◽  
Author(s):  
L. Vaccaro ◽  
M. Cannas ◽  
S. Girard ◽  
A. Alessi ◽  
A. Morana ◽  
...  
Keyword(s):  
Nonbridging Oxygen ◽  
Hole Center ◽  
Oxygen Hole

Chemical Transport Deposition of Purified Poly-Si Films from Metallurgical-grade Si Using Subatmospheric-pressure H2 Plasma

2010 ◽  
Vol 1245 ◽  
Author(s):  
Kiyoshi Yasutake ◽  
Hiromasa Ohmi ◽  
Hiroaki Kakiuchi
Keyword(s):  
Infrared Absorption ◽  
Transport Process ◽  
Chemical Transport ◽  
The Other ◽  
Determination Limit ◽  
Subatmospheric Pressure ◽  
Metal Impurities ◽  
Acceptable Range ◽  
Si Films ◽  
Absorption Measurements

AbstractPurified Si film is prepared directly from metallurgical-grade Si (MG-Si) by chemical transport using subatmospheric-pressure H2 plasma. The purification mechanism is based on the selective etching of Si by atomic H. Since most metals are not etched by H, this process is efficient to reduce metal impurities in Si films. It is demonstrated that the concentrations of most metal impurities (Fe, Mn, Ti, Co, Cr, Ni, etc.) in the prepared Si film are in the acceptable range for applying it to solar-grade Si (SOG-Si) material, or below the determination limit of the present measurements. On the other hand B and P atoms, which make volatile hydrogen compounds such as B2H6 and PH3, are difficult to eliminate by the present principle. From the infrared absorption measurements of the etching product produced by the reaction between H2 plasma and MG-Si, it is found that the main etching product is SiH4. Therefore, a remote-type chemical transport process is possible to produce SiH4 gas directly from MG-Si. Combining other purifying principle (such as a pyrolysis filter), this process may have an advantage to eliminate B2H6 and PH3 from the produced SiH4 gas.

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