Chemical annealing of the aluminum‐oxygen hole center in vitreous silica

1986 ◽  
Vol 60 (12) ◽  
pp. 4325-4327 ◽  
Author(s):  
James E. Shelby
Keyword(s):  
Vitreous Silica ◽  
Hole Center ◽  
Oxygen Hole ◽  
Chemical Annealing

Cathodoluminescence of Quartz, Silica and Thin Amorphous SiO2 Layers

1999 ◽  
Vol 560 ◽  
Author(s):  
T. Barfels ◽  
H.-J. Fitting ◽  
A. von Czarnowski
Keyword(s):  
Infrared Absorption ◽  
Structural Models ◽  
Hole Center ◽  
Amorphous Sio2 ◽  
Luminescence Centers ◽  
Oxygen Hole ◽  
Absorption Measurements

ABSTRACTCathodoluminescence and its temperature-dose behaviour of different modifications of SiO2 are presented. The detected luminescence bands are attributed to three optical active luminescence centers: the twofold coordinated silicon center (=Si:), the non-bridging oxygen hole center (NBOHC) and the self-trapped exciton (STE). The experiments are correlated with infrared absorption measurements. Existing structural models are discussed with reference to our results.

Influence of fluorine on the fiber resistance studied through the nonbridging oxygen hole center related luminescence

2013 ◽  
Vol 113 (19) ◽  
pp. 193107 ◽  
Author(s):  
L. Vaccaro ◽  
M. Cannas ◽  
S. Girard ◽  
A. Alessi ◽  
A. Morana ◽  
...  
Keyword(s):  
Nonbridging Oxygen ◽  
Hole Center ◽  
Oxygen Hole

Electronic structure of the paramagnetic boron oxygen hole center in B-dopedSiO2

2001 ◽  
Vol 64 (15) ◽  
Author(s):  
Gianfranco Pacchioni ◽  
Marco Vezzoli ◽  
Marco Fanciulli
Keyword(s):  
Electronic Structure ◽  
Hole Center ◽  
Oxygen Hole

Interconversion between non-bridging oxygen hole center and peroxy radical in F2-laser-irradiated SiO2 glass

2004 ◽  
Vol 345-346 ◽  
pp. 219-223 ◽  
Author(s):  
Koichi Kajihara ◽  
Linards Skuja ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Peroxy Radical ◽  
Hole Center ◽  
Sio2 Glass ◽  
Oxygen Hole

Evidence for pair generation of anE’ center and a nonbridging oxygen-hole center in γ-ray-irradiated fluorine-doped low-OH synthetic silica glasses

1992 ◽  
Vol 45 (18) ◽  
pp. 10818-10821 ◽  
Author(s):  
Kazuo Arai ◽  
Hiroaki Imai ◽  
Junichi Isoya ◽  
Hideo Hosono ◽  
Yoshihiro Abe ◽  
...  
Keyword(s):  
Nonbridging Oxygen ◽  
Hole Center ◽  
Silica Glasses ◽  
Oxygen Hole ◽  
Pair Generation ◽  
Γ Ray

Nanostructure Induced by Femtosecond Laser in Various OH-Contents Silicas

2008 ◽  
Vol 8 (3) ◽  
pp. 1422-1426
Author(s):  
Jianbei Qiu
Keyword(s):  
Laser Irradiation ◽  
Pulse Laser ◽  
Ultrashort Pulse ◽  
Hole Center ◽  
Photoluminescence Band ◽  
Absorption Bands ◽  
Ultrashort Pulse Laser ◽  
Oxygen Hole ◽  
Light Excitation ◽  
Oh Content

Synthetic fused silicas with different OH content were irradiated with an ultrashort pulse laser, and the induced nanostructures were investigated. Compared with the samples before laser irradiation, two absorption bands centered at 4.8 eV corresponding to the E′(αSi•) center and at 5.8 eV corresponding to the non-bridging oxygen hole center (NBOHC, αSi—O•), were observed after laser irradiation in high-OH silicas. A photoluminescence band with photon energy of 1.9 eV was observed in the irradiated silicas under 4.8 eV light excitation. Though no red photoluminescence was observed after irradiating the inside of the low OH-containing silica samples, a similar phenomenon occurred when the laser beam was focused near the surface of low-OH silicas. The induced structures relaxed after annealing at 400 °C. A possible model for the generation of 1.9 eV photoluminescence induced by an ultrashort pulse laser in wet and dry silicas was proposed.

New Phosphorus Oxygen Hole Center in Γ-Irradiated SiO2:P2O5 Optical Fiber

1985 ◽  
Vol 61 ◽  
Author(s):  
H. Kawazoe ◽  
M. Kohketsu ◽  
Y. Watanabe ◽  
K. Shibuya ◽  
K. Muta
Keyword(s):  
Optical Absorption ◽  
Optical Fiber ◽  
Room Temperature ◽  
Hole Center ◽  
Paramagnetic Centers ◽  
Γ Irradiation ◽  
Electron Center ◽  
Oxygen Hole ◽  
New Type ◽  
Hole Centers

ABSTRACTThe formation of paramagnetic centers upon γ-irradiation was examined for the silica based waveguides doped with P2O5 by using ESR and optical absorption. The centers inherent in SiO2 glasses such as Si-E′ and OHC were found to be replaced with P-related centers such as phosphorus oxygen hole centers and phosphorus electron center by introducing a small amount of P2O5. New type of POHC was detected especially in the glass with [P2O5] of 1.3 mol % at 77K, which was assumed to be a precursor of the POHC stable at room temperature. The correlation between γ-induced loss-increase and the formation of these defects was examined.

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