Fundamental defect centers in glass:Si29hyperfine structure of the nonbridging oxygen hole center and the peroxy radical ina-SiO2

1981 ◽  
Vol 24 (8) ◽  
pp. 4896-4898 ◽  
Author(s):  
D. L. Griscom ◽  
E. J. Friebele
Keyword(s):  
Peroxy Radical ◽  
Nonbridging Oxygen ◽  
Hole Center ◽  
Defect Centers ◽  
Oxygen Hole

Influence of fluorine on the fiber resistance studied through the nonbridging oxygen hole center related luminescence

2013 ◽  
Vol 113 (19) ◽  
pp. 193107 ◽  
Author(s):  
L. Vaccaro ◽  
M. Cannas ◽  
S. Girard ◽  
A. Alessi ◽  
A. Morana ◽  
...  
Keyword(s):  
Nonbridging Oxygen ◽  
Hole Center ◽  
Oxygen Hole

Interconversion between non-bridging oxygen hole center and peroxy radical in F2-laser-irradiated SiO2 glass

2004 ◽  
Vol 345-346 ◽  
pp. 219-223 ◽  
Author(s):  
Koichi Kajihara ◽  
Linards Skuja ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Peroxy Radical ◽  
Hole Center ◽  
Sio2 Glass ◽  
Oxygen Hole

Evidence for pair generation of anE’ center and a nonbridging oxygen-hole center in γ-ray-irradiated fluorine-doped low-OH synthetic silica glasses

1992 ◽  
Vol 45 (18) ◽  
pp. 10818-10821 ◽  
Author(s):  
Kazuo Arai ◽  
Hiroaki Imai ◽  
Junichi Isoya ◽  
Hideo Hosono ◽  
Yoshihiro Abe ◽  
...  
Keyword(s):  
Nonbridging Oxygen ◽  
Hole Center ◽  
Silica Glasses ◽  
Oxygen Hole ◽  
Pair Generation ◽  
Γ Ray

Various types of nonbridging oxygen hole center in high‐purity silica glass

1990 ◽  
Vol 68 (3) ◽  
pp. 1212-1217 ◽  
Author(s):  
Shuji Munekuni ◽  
Toshihisa Yamanaka ◽  
Yasushi Shimogaichi ◽  
Ryoichi Tohmon ◽  
Yoshimichi Ohki ◽  
...  
Keyword(s):  
High Purity ◽  
Silica Glass ◽  
Nonbridging Oxygen ◽  
Hole Center ◽  
Oxygen Hole

X-ray induced nonbridging oxygen hole center in soda-lime silicate glass

2009 ◽  
Vol 34 (9) ◽  
pp. 3988-3991 ◽  
Author(s):  
Jiawei Sheng ◽  
Xinji Yang ◽  
Wen Dong ◽  
Jian Zhang
Keyword(s):  
Silicate Glass ◽  
Soda Lime ◽  
Nonbridging Oxygen ◽  
Hole Center ◽  
X Ray ◽  
Oxygen Hole ◽  
Soda Lime Silicate Glass

The Influence of Irradiation Temperature on U.V. Induced Defect Creation in Dry Silica

1985 ◽  
Vol 61 ◽  
Author(s):  
R. A. B. Devine ◽  
C. Fiori ◽  
J. Robertson
Keyword(s):  
Oxygen Vacancy ◽  
Peroxy Radical ◽  
Irradiation Temperature ◽  
Threshold Temperature ◽  
Peroxy Radicals ◽  
Oxygen Hole ◽  
Spin Resonance ◽  
Dependent Growth ◽  
Dose Dependent ◽  
Annealing Curve

ABSTRACTElectron spin resonance measurements have been carried out on samples of Suprasil Wl (dry silica) subjected to ultraviolet laser radiation (λ = 248 nm, E = 5 eV/photon). Studies have been made for fixed irradiation temperature (room) variable accumulated ultraviolet dose and fixed accumulated dose (3000 J/cm2) at various irradiation temperatures in the range 110 K to 335 K. Three principal defect centers are observed. Non-bridging oxygen hole centers are created at all temperatures in the range studied with slightly higher efficiency at room temperature (ration 300 K/150 K ∼ 2.5). Comparison of the dose dependent growth curve of the 4.8 eV absorption and its isochronal annealing curve with those for the oxygen hole center clearly identify the origin of the absorption band with this defect. A threshold temperature ∼ 200 K is found for oxygen vacancy creation consistent with results on single crystalline quartz. Post irradiation annealing at 593 K eliminates the vacancy centers and the peroxy radical resonance appears. Its growth as a function of accumulated ultraviolet dose and irradiation temperature supports the hypothesis that peroxy radicals form by the trapping of diffusing, molecular oxygen at the oxygen vacancy center.

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