X-RAY MONITORING OF InGaAsP LAYERS GROWN BY VAPOR PHASE EPITAXY

X-ray double crystal diffractometry provides a means of rapidly characterizing epitaxial structures. Because the technique is rapid and nondestructive and because it yields a wealth of information, rocking curves have been routinely obtained and extensively studied by us. We present here selective results illustrating the typical progression in layer quality which occurs from the initial growth in a reactor to the growth of device quality material.